FR2432241A1 - VOLTAGE DIVIDER - Google Patents
VOLTAGE DIVIDERInfo
- Publication number
- FR2432241A1 FR2432241A1 FR7916394A FR7916394A FR2432241A1 FR 2432241 A1 FR2432241 A1 FR 2432241A1 FR 7916394 A FR7916394 A FR 7916394A FR 7916394 A FR7916394 A FR 7916394A FR 2432241 A1 FR2432241 A1 FR 2432241A1
- Authority
- FR
- France
- Prior art keywords
- mosfets
- network
- control signal
- signal lines
- intersection parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004020 conductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/66—Digital/analogue converters
- H03M1/74—Simultaneous conversion
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Analogue/Digital Conversion (AREA)
- Attenuators (AREA)
Abstract
Diviseur de tension caractérisé en ce qu'il comprend un circuit en série où plusieurs éléments de résistance sont reliés en série, un réseau conducteur qui sert à conduire des tensions de points de division dans le circuit en série à une borne de sortie, et un réseau de lignes de signaux de contrôle disposé de façon à s'entrecroiser avec le réseau conducteur. Des MOSFETs sont reliés dans les parties d'intersection entre le réseau conducteur et le réseau de lignes de signaux de contrôle. Parmi ces MOSFETs ceux des parties d'intersection qui n'ont pas besoin d'ouvrir et de fermer des signaux des conducteurs en réponse à des signaux appliqués aux lignes de signaux de contrôle sont construits de MOSFETs du mode à enrichissement, et ceux des autres parties d'intersection sont construits de MOSFETs du mode appauvri.Voltage divider characterized in that it comprises a series circuit in which several resistance elements are connected in series, a conductive network which serves to conduct voltages from division points in the series circuit to an output terminal, and a network of control signal lines arranged so as to intersect with the conductive network. MOSFETs are connected in the intersection parts between the conductive network and the network of control signal lines. Among these MOSFETs those of the intersection parts which do not need to open and close signals of the conductors in response to signals applied to the control signal lines are constructed of MOSFETs of the enrichment mode, and those of the others. Intersection parts are constructed from depleted mode MOSFETs.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9043478A JPS5518016A (en) | 1978-07-26 | 1978-07-26 | Voltage divider |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2432241A1 true FR2432241A1 (en) | 1980-02-22 |
Family
ID=13998493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7916394A Withdrawn FR2432241A1 (en) | 1978-07-26 | 1979-06-26 | VOLTAGE DIVIDER |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5518016A (en) |
DE (1) | DE2930375A1 (en) |
FR (1) | FR2432241A1 (en) |
GB (1) | GB2029658A (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4354175A (en) * | 1980-05-01 | 1982-10-12 | Mostek Corporation | Analog/digital converter utilizing a single column of analog switches |
DE3026361A1 (en) * | 1980-07-11 | 1982-02-04 | Siemens AG, 1000 Berlin und 8000 München | ELECTRICAL RESISTANCE FOR INTEGRATED SEMICONDUCTOR CIRCUITS MADE OF AT LEAST TWO MONOLITICALLY SUMMARY MIS FIELD EFFECT TRANSISTORS |
EP0065022B1 (en) * | 1981-05-16 | 1985-11-27 | Deutsche ITT Industries GmbH | Integrated voltage divider with selection circuit in igfet technique, a modification thereof and its use in a da converter |
JPS58117726A (en) * | 1982-01-05 | 1983-07-13 | Matsushita Electric Ind Co Ltd | Signal switching circuit |
JPS5980010A (en) * | 1982-10-27 | 1984-05-09 | テクトロニツクス・インコ−ポレイテツド | Programmable attenuator |
JP2931440B2 (en) * | 1991-06-05 | 1999-08-09 | 旭化成マイクロシステム株式会社 | Multi-channel D / A converter |
JP3922261B2 (en) | 2004-03-08 | 2007-05-30 | セイコーエプソン株式会社 | Data driver and display device |
JP2005072609A (en) * | 2004-09-27 | 2005-03-17 | Fujitsu Ltd | Semiconductor device |
US8669781B2 (en) | 2011-05-31 | 2014-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2016034988A1 (en) | 2014-09-05 | 2016-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
US9780779B2 (en) | 2015-08-07 | 2017-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
JP6882861B2 (en) * | 2016-07-14 | 2021-06-02 | キヤノン株式会社 | Semiconductor devices, liquid discharge heads, liquid discharge head cartridges and recording devices |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2322485A1 (en) * | 1975-08-29 | 1977-03-25 | Nat Semiconductor Corp | CONVERSION ASSEMBLY FOR A / D AND D / A CONVERTERS |
-
1978
- 1978-07-26 JP JP9043478A patent/JPS5518016A/en active Granted
-
1979
- 1979-06-22 GB GB7921789A patent/GB2029658A/en not_active Withdrawn
- 1979-06-26 FR FR7916394A patent/FR2432241A1/en not_active Withdrawn
- 1979-07-26 DE DE19792930375 patent/DE2930375A1/en not_active Ceased
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2322485A1 (en) * | 1975-08-29 | 1977-03-25 | Nat Semiconductor Corp | CONVERSION ASSEMBLY FOR A / D AND D / A CONVERTERS |
Also Published As
Publication number | Publication date |
---|---|
GB2029658A (en) | 1980-03-19 |
DE2930375A1 (en) | 1980-02-07 |
JPS6157710B2 (en) | 1986-12-08 |
JPS5518016A (en) | 1980-02-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |