FR2365248A1 - INVERTER WITH AN IMPROVED LOAD LINE CHARACTERISTICS - Google Patents

INVERTER WITH AN IMPROVED LOAD LINE CHARACTERISTICS

Info

Publication number
FR2365248A1
FR2365248A1 FR7722463A FR7722463A FR2365248A1 FR 2365248 A1 FR2365248 A1 FR 2365248A1 FR 7722463 A FR7722463 A FR 7722463A FR 7722463 A FR7722463 A FR 7722463A FR 2365248 A1 FR2365248 A1 FR 2365248A1
Authority
FR
France
Prior art keywords
igfet
substrate
source
inverter
load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7722463A
Other languages
French (fr)
Other versions
FR2365248B1 (en
Inventor
Francisco H De La Moneda
Harish N Kotecha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2365248A1 publication Critical patent/FR2365248A1/en
Application granted granted Critical
Publication of FR2365248B1 publication Critical patent/FR2365248B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
    • H03K19/09482—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors using a combination of enhancement and depletion transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

Circuit inverseur statique à transistor à effet de champ à porte isolée IGFET. Il comprend l'IGFET actif 2 à mode d'enrichissement, et l'IGFET de charge 16 à mode d'appauvrissement Ces deux IGFET sont réalisés dans des parties du substrat 4 et 18 isolées électriquement l'une de l'autre. L'IGFET 2 reçoit le signal d'entrée sur sa porte 14 et a sa source 12 connectée à la masse et son drain 8 au noeud de sortie 10. L'IGFET 16 a sa source 24, sa porte 26 et la partie de substrat 18 où il est réalisé connectées au noeud de sortie tandis que son drain est connecté à un potentiel VDD . La partie du substrat 4 est connectée à un potentiel de substrat. L'augmentation de la tension de polarisation source-substrat du transistor de charge est éliminée pendant la transition d'extinction améliorant la caractéristique de courant de charge de l'inverseur.IGFET Insulated Gate Field Effect Transistor Static Inverter Circuit. It comprises the active IGFET 2 in enrichment mode, and the load IGFET 16 in depletion mode. These two IGFETs are produced in parts of the substrate 4 and 18 which are electrically isolated from one another. IGFET 2 receives the input signal on its gate 14 and has its source 12 connected to ground and its drain 8 to the output node 10. IGFET 16 has its source 24, its gate 26 and the substrate part. 18 where it is made connected to the output node while its drain is connected to a potential VDD. The portion of the substrate 4 is connected to a substrate potential. The increase in the source-substrate bias voltage of the load transistor is eliminated during the extinction transition improving the load current characteristic of the inverter.

FR7722463A 1976-09-16 1977-07-13 INVERTER WITH AN IMPROVED LOAD LINE CHARACTERISTICS Granted FR2365248A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/723,678 US4072868A (en) 1976-09-16 1976-09-16 FET inverter with isolated substrate load

Publications (2)

Publication Number Publication Date
FR2365248A1 true FR2365248A1 (en) 1978-04-14
FR2365248B1 FR2365248B1 (en) 1979-03-23

Family

ID=24907227

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7722463A Granted FR2365248A1 (en) 1976-09-16 1977-07-13 INVERTER WITH AN IMPROVED LOAD LINE CHARACTERISTICS

Country Status (5)

Country Link
US (1) US4072868A (en)
JP (1) JPS5336453A (en)
DE (1) DE2739586C2 (en)
FR (1) FR2365248A1 (en)
GB (1) GB1563863A (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4092548A (en) * 1977-03-15 1978-05-30 International Business Machines Corporation Substrate bias modulation to improve mosfet circuit performance
US4205330A (en) * 1977-04-01 1980-05-27 National Semiconductor Corporation Method of manufacturing a low voltage n-channel MOSFET device
JPS5433679A (en) * 1977-08-22 1979-03-12 Agency Of Ind Science & Technol Semiconductor intergrated circuit on insulation substrate
JPS5443551A (en) * 1977-09-14 1979-04-06 Hitachi Ltd Monolithic semiconductor integrated circuit
US4191898A (en) * 1978-05-01 1980-03-04 Motorola, Inc. High voltage CMOS circuit
FR2430092A1 (en) * 1978-06-29 1980-01-25 Ibm France METHOD FOR CORRECTING THE VOLTAGE COEFFICIENT OF SEMICONDUCTOR, DIFFUSED OR IMPLANTED RESISTORS AND RESISTORS THUS OBTAINED
US4321492A (en) * 1979-10-15 1982-03-23 Rca Corporation Two input sense circuit
US4420743A (en) * 1980-02-11 1983-12-13 Rca Corporation Voltage comparator using unequal gate width FET's
JPS56166673A (en) * 1980-04-25 1981-12-21 Hughes Aircraft Co Charge transfer type image pickup device
JPS58108099A (en) * 1981-12-07 1983-06-28 Fujitsu Ltd Fuse blowing circuit
US4675561A (en) * 1985-11-15 1987-06-23 Precision Monolithics, Inc. FET output drive circuit with parasitic transistor inhibition
US4717836A (en) * 1986-02-04 1988-01-05 Burr-Brown Corporation CMOS input level shifting circuit with temperature-compensating n-channel field effect transistor structure
US5253202A (en) * 1991-02-05 1993-10-12 International Business Machines Corporation Word line driver circuit for dynamic random access memories
JP3342730B2 (en) * 1993-03-17 2002-11-11 富士通株式会社 Nonvolatile semiconductor memory device
US5939899A (en) * 1997-04-23 1999-08-17 Lucent Technologies Inc. MOSFET substrate current logic
US6833297B1 (en) * 2002-10-04 2004-12-21 Advanced Micro Devices, Inc. Method for reducing drain induced barrier lowering in a memory device
US20080265936A1 (en) * 2007-04-27 2008-10-30 Dsm Solutions, Inc. Integrated circuit switching device, structure and method of manufacture
FI20150334A (en) 2015-01-14 2016-07-15 Artto Mikael Aurola Improved semiconductor configuration

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2443219A1 (en) * 1974-09-10 1976-03-25 Siemens Ag Complementary MOS logic circuit has inverter with two MOSFETs - in drain-drain series and depleted types gate connected to its source
US3980896A (en) * 1974-04-10 1976-09-14 Nippondenso Co., Ltd. Integrated circuit device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3461361A (en) * 1966-02-24 1969-08-12 Rca Corp Complementary mos transistor integrated circuits with inversion layer formed by ionic discharge bombardment
US3436621A (en) * 1966-12-16 1969-04-01 Texas Instruments Inc Linear amplifier utilizing a pair of field effect transistors
US3585463A (en) * 1968-11-25 1971-06-15 Gen Telephone & Elect Complementary enhancement-type mos transistors
US3925120A (en) * 1969-10-27 1975-12-09 Hitachi Ltd A method for manufacturing a semiconductor device having a buried epitaxial layer
CA945641A (en) * 1970-04-27 1974-04-16 Tokyo Shibaura Electric Co. Logic circuit using complementary type insulated gate field effect transistors
JPS5211199B1 (en) * 1970-05-27 1977-03-29
US3775693A (en) * 1971-11-29 1973-11-27 Moskek Co Mosfet logic inverter for integrated circuits
JPS48101846A (en) * 1972-04-03 1973-12-21
US3766637A (en) * 1972-05-04 1973-10-23 Rca Corp Method of making mos transistors
US3865649A (en) * 1972-10-16 1975-02-11 Harris Intertype Corp Fabrication of MOS devices and complementary bipolar transistor devices in a monolithic substrate
US3916430A (en) * 1973-03-14 1975-10-28 Rca Corp System for eliminating substrate bias effect in field effect transistor circuits
US3983572A (en) * 1973-07-09 1976-09-28 International Business Machines Semiconductor devices
US3920481A (en) * 1974-06-03 1975-11-18 Fairchild Camera Instr Co Process for fabricating insulated gate field effect transistor structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3980896A (en) * 1974-04-10 1976-09-14 Nippondenso Co., Ltd. Integrated circuit device
DE2443219A1 (en) * 1974-09-10 1976-03-25 Siemens Ag Complementary MOS logic circuit has inverter with two MOSFETs - in drain-drain series and depleted types gate connected to its source

Also Published As

Publication number Publication date
JPS5628052B2 (en) 1981-06-29
DE2739586C2 (en) 1985-02-14
US4072868A (en) 1978-02-07
GB1563863A (en) 1980-04-02
DE2739586A1 (en) 1978-03-23
JPS5336453A (en) 1978-04-04
FR2365248B1 (en) 1979-03-23

Similar Documents

Publication Publication Date Title
FR2365248A1 (en) INVERTER WITH AN IMPROVED LOAD LINE CHARACTERISTICS
JPS6471217A (en) Output buffer circuit
FR2536607A1 (en) INTERFACE CIRCUIT
KR830008210A (en) Clock circuit with oscillator gain control
JPS5647995A (en) Memory device
KR930020850A (en) Level conversion circuit
KR920022287A (en) Current memory cell
KR900002558A (en) Output circuit
KR890004501A (en) Symmetric amplifier load circuit and logic level adjustment amplifier
KR860007783A (en) Comparator Circuit with Improved Output Characteristics
FR2434425A1 (en) INTEGRATED CONSTANT CURRENT SOURCE WITH INSULATED DOOR FIELD-EFFECT TRANSISTORS
US4490632A (en) Noninverting amplifier circuit for one propagation delay complex logic gates
FR2384389A1 (en) SUBSTRATE POLARIZATION MODULATION TO IMPROVE THE PERFORMANCE OF MOSFET CIRCUITS
KR900002552A (en) Output circuit
FR2435166A1 (en) REAR GATE POLARIZATION VOLTAGE CIRCUIT FOR MOS TRANSISTORS
JPS6471218A (en) Input buffer circuit and input level shift circuit
KR890009000A (en) Digital integrated circuits
KR850005060A (en) Digital integrated circuit with complementary field effect transistor
JPS6471216A (en) Buffer circuit
FR2377707A1 (en) INTEGRATED CIRCUIT
GB1466195A (en) Transistor latch circuit
KR880014807A (en) Charge transfer device
JPS6467795A (en) Reading amplifier
FR2374772A1 (en) INTEGRATED CIRCUIT AMPLIFIER
JPS556856A (en) Semiconductor integrated circuit

Legal Events

Date Code Title Description
ST Notification of lapse