FR2424633B1 - - Google Patents
Info
- Publication number
- FR2424633B1 FR2424633B1 FR7835504A FR7835504A FR2424633B1 FR 2424633 B1 FR2424633 B1 FR 2424633B1 FR 7835504 A FR7835504 A FR 7835504A FR 7835504 A FR7835504 A FR 7835504A FR 2424633 B1 FR2424633 B1 FR 2424633B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/899,564 US4162505A (en) | 1978-04-24 | 1978-04-24 | Inverted amorphous silicon solar cell utilizing cermet layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2424633A1 FR2424633A1 (fr) | 1979-11-23 |
| FR2424633B1 true FR2424633B1 (US07655688-20100202-C00086.png) | 1984-05-04 |
Family
ID=25411225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7835504A Granted FR2424633A1 (fr) | 1978-04-24 | 1978-12-18 | Cellule solaire au silicium amorphe |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4162505A (US07655688-20100202-C00086.png) |
| JP (1) | JPS54141594A (US07655688-20100202-C00086.png) |
| DE (1) | DE2854652A1 (US07655688-20100202-C00086.png) |
| FR (1) | FR2424633A1 (US07655688-20100202-C00086.png) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4226897A (en) * | 1977-12-05 | 1980-10-07 | Plasma Physics Corporation | Method of forming semiconducting materials and barriers |
| AU530905B2 (en) * | 1977-12-22 | 1983-08-04 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
| US4272641A (en) * | 1979-04-19 | 1981-06-09 | Rca Corporation | Tandem junction amorphous silicon solar cells |
| US4254426A (en) * | 1979-05-09 | 1981-03-03 | Rca Corporation | Method and structure for passivating semiconductor material |
| US4387387A (en) * | 1979-08-13 | 1983-06-07 | Shunpei Yamazaki | PN Or PIN junction type semiconductor photoelectric conversion device |
| JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
| JPS56119673U (US07655688-20100202-C00086.png) * | 1980-02-13 | 1981-09-11 | ||
| JPS5743477A (en) * | 1980-04-24 | 1982-03-11 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS56152276A (en) * | 1980-04-25 | 1981-11-25 | Teijin Ltd | Solar cell made of amorphous silicon thin film |
| JPS5721875A (en) * | 1980-07-14 | 1982-02-04 | Canon Inc | Photosensor |
| US4339470A (en) * | 1981-02-13 | 1982-07-13 | Rca Corporation | Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer |
| US4443651A (en) * | 1981-03-31 | 1984-04-17 | Rca Corporation | Series connected solar cells on a single substrate |
| FR2503457B1 (fr) * | 1981-03-31 | 1987-01-23 | Rca Corp | Systeme de cellules solaires connectees en serie sur un substrat unique |
| JPS583296U (ja) * | 1981-06-29 | 1983-01-10 | 東洋電機製造株式会社 | ドラム形自動製図機の回転ドラム |
| US4939559A (en) * | 1981-12-14 | 1990-07-03 | International Business Machines Corporation | Dual electron injector structures using a conductive oxide between injectors |
| JPS58137264A (ja) * | 1982-02-09 | 1983-08-15 | Fuji Electric Corp Res & Dev Ltd | 光電変換装置 |
| US4589006A (en) * | 1982-08-23 | 1986-05-13 | The United States Of America As Represented By The United States Department Of Energy | Germanium detector passivated with hydrogenated amorphous germanium |
| GB2137810B (en) * | 1983-03-08 | 1986-10-22 | Agency Ind Science Techn | A solar cell of amorphous silicon |
| US4543442A (en) * | 1983-06-24 | 1985-09-24 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | GaAs Schottky barrier photo-responsive device and method of fabrication |
| JPH0680837B2 (ja) * | 1983-08-29 | 1994-10-12 | 通商産業省工業技術院長 | 光路を延長した光電変換素子 |
| JPS61222282A (ja) * | 1985-03-28 | 1986-10-02 | Nippon Sheet Glass Co Ltd | アモルフアスシリコン太陽電池 |
| US4728406A (en) * | 1986-08-18 | 1988-03-01 | Energy Conversion Devices, Inc. | Method for plasma - coating a semiconductor body |
| KR20010033375A (ko) * | 1998-01-22 | 2001-04-25 | 하루타 히로시 | 태양 전지 장치와 그 제조 방법 |
| DE10235012A1 (de) * | 2002-07-31 | 2004-03-04 | Siemens Ag | Material für eine Zwischenschicht eines organischen photovoltaischen Bauelements, Herstellungsverfahren und Verwendung dazu sowie ein photovoltaisches Bauelement |
| JP2005064273A (ja) * | 2003-08-13 | 2005-03-10 | Idemitsu Kosan Co Ltd | 光起電力素子用電極及びそれを用いた光起電力素子 |
| US20080047602A1 (en) * | 2006-08-22 | 2008-02-28 | Guardian Industries Corp. | Front contact with high-function TCO for use in photovoltaic device and method of making same |
| US8012317B2 (en) * | 2006-11-02 | 2011-09-06 | Guardian Industries Corp. | Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same |
| US20080302414A1 (en) * | 2006-11-02 | 2008-12-11 | Den Boer Willem | Front electrode for use in photovoltaic device and method of making same |
| US7964788B2 (en) * | 2006-11-02 | 2011-06-21 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
| US20080178932A1 (en) * | 2006-11-02 | 2008-07-31 | Guardian Industries Corp. | Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same |
| US8076571B2 (en) * | 2006-11-02 | 2011-12-13 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
| US8203073B2 (en) * | 2006-11-02 | 2012-06-19 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
| US20080105298A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
| US20080105299A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same |
| US20080105293A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
| US8334452B2 (en) | 2007-01-08 | 2012-12-18 | Guardian Industries Corp. | Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like |
| US20080169021A1 (en) * | 2007-01-16 | 2008-07-17 | Guardian Industries Corp. | Method of making TCO front electrode for use in photovoltaic device or the like |
| US20080223430A1 (en) * | 2007-03-14 | 2008-09-18 | Guardian Industries Corp. | Buffer layer for front electrode structure in photovoltaic device or the like |
| US20080308145A1 (en) * | 2007-06-12 | 2008-12-18 | Guardian Industries Corp | Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same |
| US20080308146A1 (en) * | 2007-06-14 | 2008-12-18 | Guardian Industries Corp. | Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same |
| US7888594B2 (en) * | 2007-11-20 | 2011-02-15 | Guardian Industries Corp. | Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index |
| US20090194157A1 (en) * | 2008-02-01 | 2009-08-06 | Guardian Industries Corp. | Front electrode having etched surface for use in photovoltaic device and method of making same |
| US20090194155A1 (en) * | 2008-02-01 | 2009-08-06 | Guardian Industries Corp. | Front electrode having etched surface for use in photovoltaic device and method of making same |
| US8022291B2 (en) * | 2008-10-15 | 2011-09-20 | Guardian Industries Corp. | Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device |
| US8921686B2 (en) | 2009-03-12 | 2014-12-30 | Gtat Corporation | Back-contact photovoltaic cell comprising a thin lamina having a superstrate receiver element |
| US20100229928A1 (en) * | 2009-03-12 | 2010-09-16 | Twin Creeks Technologies, Inc. | Back-contact photovoltaic cell comprising a thin lamina having a superstrate receiver element |
| US20110088763A1 (en) * | 2009-10-15 | 2011-04-21 | Applied Materials, Inc. | Method and apparatus for improving photovoltaic efficiency |
| US20110272010A1 (en) * | 2010-05-10 | 2011-11-10 | International Business Machines Corporation | High work function metal interfacial films for improving fill factor in solar cells |
| US20120031477A1 (en) | 2010-08-04 | 2012-02-09 | Egypt Nanotechnology Center | Photovoltaic devices with an interfacial band-gap modifying structure and methods for forming the same |
| WO2012024557A2 (en) * | 2010-08-20 | 2012-02-23 | First Solar, Inc. | Photovoltaic device front contact |
| JP5414010B2 (ja) * | 2011-05-20 | 2014-02-12 | パナソニック株式会社 | 多接合型化合物太陽電池セル、多接合型化合物太陽電池およびその製造方法 |
| CN102324443A (zh) * | 2011-09-21 | 2012-01-18 | 中国电子科技集团公司第十八研究所 | 一种倒装三结InGaN太阳能电池 |
| US8871608B2 (en) | 2012-02-08 | 2014-10-28 | Gtat Corporation | Method for fabricating backside-illuminated sensors |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3843420A (en) * | 1972-10-24 | 1974-10-22 | Rca Corp | Sputtered granular ferromagnetic iron-nickel-silica films |
| US3919589A (en) * | 1973-04-06 | 1975-11-11 | Rca Corp | Electroluminescent cell with a current-limiting layer of high resistivity |
| US4010312A (en) * | 1975-01-23 | 1977-03-01 | Rca Corporation | High resistance cermet film and method of making the same |
| AU503228B2 (en) * | 1975-07-28 | 1979-08-30 | Rca Corp. | Semiconductor device |
| US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
| US4196438A (en) * | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
| US4126150A (en) * | 1977-03-28 | 1978-11-21 | Rca Corporation | Photovoltaic device having increased absorption efficiency |
| US4117506A (en) * | 1977-07-28 | 1978-09-26 | Rca Corporation | Amorphous silicon photovoltaic device having an insulating layer |
-
1978
- 1978-04-24 US US05/899,564 patent/US4162505A/en not_active Expired - Lifetime
- 1978-12-18 JP JP15736278A patent/JPS54141594A/ja active Granted
- 1978-12-18 FR FR7835504A patent/FR2424633A1/fr active Granted
- 1978-12-18 DE DE19782854652 patent/DE2854652A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2854652C2 (US07655688-20100202-C00086.png) | 1990-08-02 |
| JPS54141594A (en) | 1979-11-02 |
| FR2424633A1 (fr) | 1979-11-23 |
| DE2854652A1 (de) | 1979-10-31 |
| JPS6228599B2 (US07655688-20100202-C00086.png) | 1987-06-22 |
| US4162505A (en) | 1979-07-24 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |