FR2404963A1 - Circuit cmos a polarite reversible - Google Patents

Circuit cmos a polarite reversible

Info

Publication number
FR2404963A1
FR2404963A1 FR7828269A FR7828269A FR2404963A1 FR 2404963 A1 FR2404963 A1 FR 2404963A1 FR 7828269 A FR7828269 A FR 7828269A FR 7828269 A FR7828269 A FR 7828269A FR 2404963 A1 FR2404963 A1 FR 2404963A1
Authority
FR
France
Prior art keywords
input
cmos circuit
drain
gate
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7828269A
Other languages
English (en)
French (fr)
Other versions
FR2404963B1 (US06346242-20020212-C00066.png
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of FR2404963A1 publication Critical patent/FR2404963A1/fr
Application granted granted Critical
Publication of FR2404963B1 publication Critical patent/FR2404963B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
    • H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
    • H02H11/003—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection using a field effect transistor as protecting element in one of the supply lines
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
    • H02M7/2195—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration the switches being synchronously commutated at the same frequency of the AC input voltage
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Rectifiers (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR7828269A 1977-10-03 1978-10-03 Circuit cmos a polarite reversible Granted FR2404963A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/838,705 US4139880A (en) 1977-10-03 1977-10-03 CMOS polarity reversal circuit

Publications (2)

Publication Number Publication Date
FR2404963A1 true FR2404963A1 (fr) 1979-04-27
FR2404963B1 FR2404963B1 (US06346242-20020212-C00066.png) 1983-03-18

Family

ID=25277849

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7828269A Granted FR2404963A1 (fr) 1977-10-03 1978-10-03 Circuit cmos a polarite reversible

Country Status (8)

Country Link
US (1) US4139880A (US06346242-20020212-C00066.png)
JP (1) JPS5460550A (US06346242-20020212-C00066.png)
DE (1) DE2841429C2 (US06346242-20020212-C00066.png)
FR (1) FR2404963A1 (US06346242-20020212-C00066.png)
GB (1) GB2005092B (US06346242-20020212-C00066.png)
HK (1) HK66484A (US06346242-20020212-C00066.png)
MY (1) MY8500491A (US06346242-20020212-C00066.png)
SG (1) SG18184G (US06346242-20020212-C00066.png)

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DE3019144A1 (de) * 1980-05-20 1981-11-26 Robert Bosch Gmbh, 7000 Stuttgart Batterieladesystem
US4420786A (en) * 1981-11-16 1983-12-13 Motorola, Inc. Polarity guard circuit
JPS5891242A (ja) * 1981-11-24 1983-05-31 株式会社日立製作所 多機能便器
US4473757A (en) * 1981-12-08 1984-09-25 Intersil, Inc. Circuit means for converting a bipolar input to a unipolar output
GB2128021A (en) * 1982-09-13 1984-04-18 Standard Microsyst Smc CMOS structure including deep region and process for fabrication
DE3377848D1 (de) * 1982-12-08 1988-09-29 Siliconix Ltd Bridge rectifier circuit
US4875151A (en) * 1986-08-11 1989-10-17 Ncr Corporation Two transistor full wave rectifier
US4857985A (en) * 1987-08-31 1989-08-15 National Semiconductor Corporation MOS IC reverse battery protection
US5233230A (en) * 1990-05-04 1993-08-03 Bonar George D Power cord
DE4115677A1 (de) * 1991-05-14 1992-11-19 Philips Patentverwaltung Gleichrichterschaltung
JP3234043B2 (ja) * 1993-05-10 2001-12-04 株式会社東芝 液晶駆動用電源回路
US5622886A (en) * 1994-03-31 1997-04-22 Atmel Corporation Method of making a high voltage rectifier for an integrated circuit chip
FR2731851B1 (fr) * 1995-03-15 1997-04-18 Schlumberger Ind Sa Pont redresseur a chute de tension reduite
US5631793A (en) * 1995-09-05 1997-05-20 Winbond Electronics Corporation Capacitor-couple electrostatic discharge protection circuit
KR19990076761A (ko) * 1995-12-29 1999-10-15 맨프래드 메이어 에너지 손실이 최소화된 능동 정류기
US5936514A (en) * 1996-09-27 1999-08-10 Rosemount Inc. Power supply input circuit for field instrument
US6421261B1 (en) 1996-11-13 2002-07-16 Seiko Epson Corporation Power supply apparatus with unidirectional units
FR2756679B1 (fr) * 1996-11-29 1999-02-12 France Telecom Dispositif de redressement de tension a composants integres
US5825079A (en) * 1997-01-23 1998-10-20 Luminous Intent, Inc. Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage
DE19840300A1 (de) * 1998-09-04 2000-03-16 Bosch Gmbh Robert Verpol-Schutzschaltung für eine elektronische Leistungsendstufe
US6166451A (en) * 1999-01-14 2000-12-26 Motorola, Inc. Distributed airbag firing system and interface circuit therefor
US6420757B1 (en) 1999-09-14 2002-07-16 Vram Technologies, Llc Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability
US6349047B1 (en) * 2000-12-18 2002-02-19 Lovoltech, Inc. Full wave rectifier circuit using normally off JFETs
US6433370B1 (en) 2000-02-10 2002-08-13 Vram Technologies, Llc Method and apparatus for cylindrical semiconductor diodes
WO2002007225A1 (fr) * 2000-07-14 2002-01-24 Yamatake Corporation Dispositif a semi-conducteur a grille isolee destine a un redresseur
TW479904U (en) * 2000-10-09 2002-03-11 Sunplus Technology Co Ltd Diode circuit to simulate zero cutoff voltage and the rectifying circuit having zero cutoff voltage characteristics
US6580150B1 (en) 2000-11-13 2003-06-17 Vram Technologies, Llc Vertical junction field effect semiconductor diodes
US6537921B2 (en) 2001-05-23 2003-03-25 Vram Technologies, Llc Vertical metal oxide silicon field effect semiconductor diodes
US6825577B2 (en) * 2001-12-10 2004-11-30 Fluke Corporation Dual power polarity protector/indicator
US6958275B2 (en) * 2003-03-11 2005-10-25 Integrated Discrete Devices, Llc MOSFET power transistors and methods
WO2006136034A1 (en) * 2005-06-24 2006-12-28 The Flewelling Ford Family Trust A method and device for lowering the impedance of a fet (field effect transistor)
US8614874B2 (en) * 2005-11-22 2013-12-24 Harris Corporation Biased MOSFET active bridge with active gate drive
US7561404B2 (en) * 2005-11-22 2009-07-14 Harris Corporation Biased-MOSFET active bridge
US7411768B2 (en) * 2006-05-30 2008-08-12 Harris Corporation Low-loss rectifier with shoot-through current protection
US7852639B2 (en) * 2007-05-22 2010-12-14 Harris Corporation Low-loss rectifier with optically coupled gate shunting
US8054049B1 (en) * 2007-08-30 2011-11-08 Avaya Inc. Using battery orientation to control mode of operation
CN101494380A (zh) * 2008-01-25 2009-07-29 鸿富锦精密工业（深圳）有限公司 电子设备及其逆接保护器
CA2718901C (en) 2008-03-17 2018-10-16 Powermat Ltd. Inductive transmission system
US8320143B2 (en) * 2008-04-15 2012-11-27 Powermat Technologies, Ltd. Bridge synchronous rectifier
US8981598B2 (en) 2008-07-02 2015-03-17 Powermat Technologies Ltd. Energy efficient inductive power transmission system and method
US11979201B2 (en) 2008-07-02 2024-05-07 Powermat Technologies Ltd. System and method for coded communication signals regulating inductive power transmissions
US8174214B2 (en) * 2009-09-28 2012-05-08 Harris Corporation Three-phase low-loss rectifier with active gate drive
US8125808B2 (en) * 2009-09-28 2012-02-28 Harris Corporation Three-phase low-loss rectifier
US8729902B1 (en) 2009-10-05 2014-05-20 White's Electronics, Inc. Metal detector analysis and display methods
US8045350B2 (en) * 2009-12-11 2011-10-25 Harris Corporation N-phase active bridge circuits including N-channel field effect transistors with active gate drive
US8792260B2 (en) * 2010-09-27 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Rectifier circuit and semiconductor device using the same
JP6190204B2 (ja) * 2012-09-25 2017-08-30 エスアイアイ・セミコンダクタ株式会社 半導体装置
US9465088B2 (en) * 2014-01-28 2016-10-11 Sensata Technologies, Inc. Polarity insensitive hall effect sensor
WO2018071694A1 (en) * 2016-10-12 2018-04-19 Snap Inc. Circuits and methods for wearable device charging and wired control
US10903145B2 (en) * 2017-11-02 2021-01-26 Microchip Technology Incorporated Symmetric input circuitry for IC in two-pin package

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FR1538050A (fr) * 1966-09-15 1968-08-30 Ibm Dispositifs à redresseurs semi-conducteurs
DE2329579A1 (de) * 1973-06-09 1975-01-02 Rohde & Schwarz Gegentakt-quadrierschaltung und damit aufgebaute bruecken-quadrierschaltung bzw. effektivwert-gleichrichterschaltung

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Publication number Priority date Publication date Assignee Title
FR1538050A (fr) * 1966-09-15 1968-08-30 Ibm Dispositifs à redresseurs semi-conducteurs
DE2329579A1 (de) * 1973-06-09 1975-01-02 Rohde & Schwarz Gegentakt-quadrierschaltung und damit aufgebaute bruecken-quadrierschaltung bzw. effektivwert-gleichrichterschaltung

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Also Published As

Publication number Publication date
GB2005092B (en) 1982-06-16
FR2404963B1 (US06346242-20020212-C00066.png) 1983-03-18
US4139880A (en) 1979-02-13
JPS5717379B2 (US06346242-20020212-C00066.png) 1982-04-10
MY8500491A (en) 1985-12-31
GB2005092A (en) 1979-04-11
DE2841429A1 (de) 1979-04-05
DE2841429C2 (de) 1987-04-23
HK66484A (en) 1984-08-31
SG18184G (en) 1985-03-08
JPS5460550A (en) 1979-05-16

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