FR2397716A1 - Procede de fabrication d'un redresseur a semi-conducteur a haute vitesse - Google Patents

Procede de fabrication d'un redresseur a semi-conducteur a haute vitesse

Info

Publication number
FR2397716A1
FR2397716A1 FR7820251A FR7820251A FR2397716A1 FR 2397716 A1 FR2397716 A1 FR 2397716A1 FR 7820251 A FR7820251 A FR 7820251A FR 7820251 A FR7820251 A FR 7820251A FR 2397716 A1 FR2397716 A1 FR 2397716A1
Authority
FR
France
Prior art keywords
degrees
rectifier
speed semiconductor
temperature
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7820251A
Other languages
English (en)
French (fr)
Other versions
FR2397716B1 (US20090163788A1-20090625-C00002.png
Inventor
Yen Sheng Edmund Sun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2397716A1 publication Critical patent/FR2397716A1/fr
Application granted granted Critical
Publication of FR2397716B1 publication Critical patent/FR2397716B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/046—Electron beam treatment of devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thyristors (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
FR7820251A 1977-07-11 1978-07-07 Procede de fabrication d'un redresseur a semi-conducteur a haute vitesse Granted FR2397716A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/814,405 US4137099A (en) 1977-07-11 1977-07-11 Method of controlling leakage currents and reverse recovery time of rectifiers by hot electron irradiation and post-annealing treatments

Publications (2)

Publication Number Publication Date
FR2397716A1 true FR2397716A1 (fr) 1979-02-09
FR2397716B1 FR2397716B1 (US20090163788A1-20090625-C00002.png) 1984-04-13

Family

ID=25214968

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7820251A Granted FR2397716A1 (fr) 1977-07-11 1978-07-07 Procede de fabrication d'un redresseur a semi-conducteur a haute vitesse

Country Status (9)

Country Link
US (1) US4137099A (US20090163788A1-20090625-C00002.png)
JP (1) JPS58191B2 (US20090163788A1-20090625-C00002.png)
BE (1) BE868869A (US20090163788A1-20090625-C00002.png)
DE (1) DE2829627A1 (US20090163788A1-20090625-C00002.png)
FR (1) FR2397716A1 (US20090163788A1-20090625-C00002.png)
GB (1) GB1587363A (US20090163788A1-20090625-C00002.png)
IT (1) IT1096939B (US20090163788A1-20090625-C00002.png)
NL (1) NL186208C (US20090163788A1-20090625-C00002.png)
SE (1) SE434588B (US20090163788A1-20090625-C00002.png)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2755418A1 (de) * 1977-12-13 1979-06-21 Bosch Gmbh Robert Verfahren zur herstellung eines halbleiter-bauelements
DE3037316C2 (de) * 1979-10-03 1982-12-23 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zur Herstellung von Leistungsthyristoren
US4311534A (en) * 1980-06-27 1982-01-19 Westinghouse Electric Corp. Reducing the reverse recovery charge of thyristors by nuclear irradiation
US4395293A (en) * 1981-03-23 1983-07-26 Hughes Aircraft Company Accelerated annealing of gallium arsenide solar cells
DE3714357C2 (de) * 1986-04-30 1994-02-03 Toshiba Ceramics Co Siliciumwafer und Verfahren zu dessen Herstellung und Siliziumwafer-Auswahleinrichtung
DE3639835A1 (de) * 1986-11-21 1987-04-30 Corneliu Dipl Phys Protop Verfahren zur herstellung von hochgeschwindigkeitshalbleitern
DE19709652C2 (de) * 1997-03-10 1999-09-16 Semikron Elektronik Gmbh Schnelle Leistungsdiode mit einer durch Bestrahlen mit beschleunigten Teilchen erzeugten Mittelzone
KR100342073B1 (ko) * 2000-03-29 2002-07-02 조중열 반도체 소자의 제조 방법
JP2008091705A (ja) * 2006-10-03 2008-04-17 Mitsubishi Electric Corp 半導体装置及びその製造方法
DE102009048773A1 (de) 2009-10-08 2011-04-21 Oxea Deutschland Gmbh Verfahren zur Farbaufhellung von Polyolestern
JP2018006364A (ja) * 2016-06-27 2018-01-11 三菱電機株式会社 電子線照射装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3888701A (en) * 1973-03-09 1975-06-10 Westinghouse Electric Corp Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing
US4043836A (en) * 1976-05-03 1977-08-23 General Electric Company Method of manufacturing semiconductor devices
DE2736250A1 (de) * 1976-08-11 1978-02-16 Hitachi Ltd Halbleiterelemente und verfahren zu deren herstellung
DE2804147A1 (de) * 1977-02-02 1978-08-17 Hitachi Ltd Verfahren zur herstellung von halbleiter-bauelementen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3894890A (en) * 1972-07-17 1975-07-15 Siemens Ag Method for improving the radiation resistance of silicon transistors
US3933527A (en) * 1973-03-09 1976-01-20 Westinghouse Electric Corporation Fine tuning power diodes with irradiation
US4056408A (en) * 1976-03-17 1977-11-01 Westinghouse Electric Corporation Reducing the switching time of semiconductor devices by nuclear irradiation
US4047976A (en) * 1976-06-21 1977-09-13 Motorola, Inc. Method for manufacturing a high-speed semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3888701A (en) * 1973-03-09 1975-06-10 Westinghouse Electric Corp Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing
US4043836A (en) * 1976-05-03 1977-08-23 General Electric Company Method of manufacturing semiconductor devices
FR2350693A1 (fr) * 1976-05-03 1977-12-02 Gen Electric Procede pour ameliorer les caracteristiques electriques des dispositifs semi-conducteurs
DE2736250A1 (de) * 1976-08-11 1978-02-16 Hitachi Ltd Halbleiterelemente und verfahren zu deren herstellung
DE2804147A1 (de) * 1977-02-02 1978-08-17 Hitachi Ltd Verfahren zur herstellung von halbleiter-bauelementen

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/72 *

Also Published As

Publication number Publication date
US4137099A (en) 1979-01-30
NL7807414A (nl) 1979-01-15
BE868869A (fr) 1978-11-03
FR2397716B1 (US20090163788A1-20090625-C00002.png) 1984-04-13
IT7825430A0 (it) 1978-07-06
NL186208B (nl) 1990-05-01
GB1587363A (en) 1981-04-01
JPS58191B2 (ja) 1983-01-05
JPS5419369A (en) 1979-02-14
SE7806391L (sv) 1979-01-12
SE434588B (sv) 1984-07-30
NL186208C (nl) 1990-10-01
DE2829627A1 (de) 1979-01-25
IT1096939B (it) 1985-08-26

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Legal Events

Date Code Title Description
ST Notification of lapse