FR2396411B2 - - Google Patents
Info
- Publication number
- FR2396411B2 FR2396411B2 FR7818541A FR7818541A FR2396411B2 FR 2396411 B2 FR2396411 B2 FR 2396411B2 FR 7818541 A FR7818541 A FR 7818541A FR 7818541 A FR7818541 A FR 7818541A FR 2396411 B2 FR2396411 B2 FR 2396411B2
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/051—Manufacture or treatment of vertical BJTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
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- H10W10/0126—
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- H10W10/13—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/965—Shaped junction formation
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19772728845 DE2728845A1 (de) | 1977-06-27 | 1977-06-27 | Verfahren zum herstellen eines hochfrequenztransistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2396411A2 FR2396411A2 (enExample) | 1979-01-26 |
| FR2396411B2 true FR2396411B2 (enExample) | 1983-08-05 |
Family
ID=6012432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7818541A Expired FR2396411B2 (enExample) | 1977-06-27 | 1978-06-21 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4175983A (enExample) |
| JP (1) | JPS5411683A (enExample) |
| DE (1) | DE2728845A1 (enExample) |
| FR (1) | FR2396411B2 (enExample) |
| GB (1) | GB1577405A (enExample) |
| IT (1) | IT1108801B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5577172A (en) * | 1978-12-06 | 1980-06-10 | Oki Electric Ind Co Ltd | Semiconductor device |
| US4269636A (en) * | 1978-12-29 | 1981-05-26 | Harris Corporation | Method of fabricating self-aligned bipolar transistor process and device utilizing etching and self-aligned masking |
| JPS5852339B2 (ja) * | 1979-03-20 | 1983-11-22 | 富士通株式会社 | 半導体装置の製造方法 |
| US4261761A (en) * | 1979-09-04 | 1981-04-14 | Tektronix, Inc. | Method of manufacturing sub-micron channel width MOS transistor |
| US4261763A (en) * | 1979-10-01 | 1981-04-14 | Burroughs Corporation | Fabrication of integrated circuits employing only ion implantation for all dopant layers |
| JPS57149770A (en) * | 1981-03-11 | 1982-09-16 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| DE3175429D1 (en) * | 1981-11-28 | 1986-11-06 | Itt Ind Gmbh Deutsche | Process for producing a monolithic integrated circuit having at least one pair of complementary field-effect transistors and at least one bipolar transistor |
| US4961102A (en) * | 1982-01-04 | 1990-10-02 | Shideler Jay A | Junction programmable vertical transistor with high performance transistor |
| US4624046A (en) * | 1982-01-04 | 1986-11-25 | Fairchild Camera & Instrument Corp. | Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM |
| JPS5941877A (ja) * | 1982-08-31 | 1984-03-08 | Junichi Nishizawa | フオトトランジスタ |
| SE461428B (sv) * | 1988-06-16 | 1990-02-12 | Ericsson Telefon Ab L M | Foerfarande foer att paa ett underlag av halvledarmaterial framstaella en bipolaer transistor eller en bipolaer transistor och en faelteffekttransistor eller en bipolaer transistor och en faelteffekttransistor med en komplementaer faelteffekttransistor och anordningar framstaellda enligt foerfarandena |
| JP2748420B2 (ja) * | 1988-08-12 | 1998-05-06 | ソニー株式会社 | バイポーラトランジスタ及びその製造方法 |
| DE69323614T2 (de) * | 1992-11-12 | 1999-06-17 | National Semiconductor Corp., Santa Clara, Calif. | Schmale Basis-Effekte vermeidendes Verfahren für einen Transistor |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1457139A (en) * | 1973-09-27 | 1976-12-01 | Hitachi Ltd | Method of manufacturing semiconductor device |
| JPS5214594B2 (enExample) * | 1973-10-17 | 1977-04-22 | ||
| NL180466C (nl) * | 1974-03-15 | 1987-02-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een halfgeleiderlichaam voorzien van een in het halfgeleiderlichaam verzonken patroon van isolerend materiaal. |
| US3904450A (en) * | 1974-04-26 | 1975-09-09 | Bell Telephone Labor Inc | Method of fabricating injection logic integrated circuits using oxide isolation |
| JPS50153873A (enExample) * | 1974-05-30 | 1975-12-11 | ||
| US4066473A (en) * | 1976-07-15 | 1978-01-03 | Fairchild Camera And Instrument Corporation | Method of fabricating high-gain transistors |
-
1977
- 1977-06-27 DE DE19772728845 patent/DE2728845A1/de active Granted
-
1978
- 1978-04-28 GB GB16908/78A patent/GB1577405A/en not_active Expired
- 1978-06-14 US US05/915,368 patent/US4175983A/en not_active Expired - Lifetime
- 1978-06-20 IT IT24720/78A patent/IT1108801B/it active
- 1978-06-21 FR FR7818541A patent/FR2396411B2/fr not_active Expired
- 1978-06-26 JP JP7733678A patent/JPS5411683A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2728845C2 (enExample) | 1987-07-16 |
| GB1577405A (en) | 1980-10-22 |
| DE2728845A1 (de) | 1979-01-18 |
| IT7824720A0 (it) | 1978-06-20 |
| US4175983A (en) | 1979-11-27 |
| IT1108801B (it) | 1985-12-09 |
| FR2396411A2 (enExample) | 1979-01-26 |
| JPS5411683A (en) | 1979-01-27 |