FR2392137A1 - Procede de fabrication de pieces de silicium de grande surface fixees a un substrat - Google Patents

Procede de fabrication de pieces de silicium de grande surface fixees a un substrat

Info

Publication number
FR2392137A1
FR2392137A1 FR7734433A FR7734433A FR2392137A1 FR 2392137 A1 FR2392137 A1 FR 2392137A1 FR 7734433 A FR7734433 A FR 7734433A FR 7734433 A FR7734433 A FR 7734433A FR 2392137 A1 FR2392137 A1 FR 2392137A1
Authority
FR
France
Prior art keywords
substrate
parts fixed
silicon parts
manufacturing large
large surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7734433A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of FR2392137A1 publication Critical patent/FR2392137A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Abstract

La présente invention concerne un procédé de fabrication de pièces de silicium de grande surface fixées à un substrat, par précipitation à partir d'une phase gazeuse. Le procédé selon l'invention est caractérisé en ce que le silicium est déposé à l'état liquide, sous une épaisseur de 30 à 500 mu m sur des substrats en carbone vitreux chauffés vers 1 500 degrés C en y faisant passer un courant électrique et ensuite on le refroidit, à partir de sa surface libre, au-dessous de son point de fusion. Ces pièces de silicium fixées à un substrat sont utilisables pour la fabrication de piles solaires de rendement compris entre 6 et 10 % environ.
FR7734433A 1976-11-16 1977-11-16 Procede de fabrication de pieces de silicium de grande surface fixees a un substrat Withdrawn FR2392137A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762652218 DE2652218A1 (de) 1976-11-16 1976-11-16 Verfahren zur herstellung von substratgebundenem, grossflaechigem silicium

Publications (1)

Publication Number Publication Date
FR2392137A1 true FR2392137A1 (fr) 1978-12-22

Family

ID=5993305

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7734433A Withdrawn FR2392137A1 (fr) 1976-11-16 1977-11-16 Procede de fabrication de pieces de silicium de grande surface fixees a un substrat

Country Status (6)

Country Link
US (1) US4141764A (fr)
JP (1) JPS5386628A (fr)
CA (1) CA1087758A (fr)
DE (1) DE2652218A1 (fr)
FR (1) FR2392137A1 (fr)
GB (1) GB1566949A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010115542A1 (fr) * 2009-03-31 2010-10-14 Centrotherm Sitec Gmbh Dispositif de serrage et de mise en contact pour barres de silicium minces

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4471042A (en) * 1978-05-04 1984-09-11 Canon Kabushiki Kaisha Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium
US4565731A (en) * 1978-05-04 1986-01-21 Canon Kabushiki Kaisha Image-forming member for electrophotography
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
US4238436A (en) * 1979-05-10 1980-12-09 General Instrument Corporation Method of obtaining polycrystalline silicon
DE3107596A1 (de) * 1981-02-27 1982-10-21 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen "verfahren zur herstellung von halbleiterscheiben"
US4602422A (en) * 1984-06-18 1986-07-29 Khanh Dinh Flash compression process for making photovoltaic cells
JPH01296611A (ja) * 1988-05-25 1989-11-30 Canon Inc 半導体薄膜堆積法
US5169453A (en) * 1989-03-20 1992-12-08 Toyoko Kagaku Co., Ltd. Wafer supporting jig and a decompressed gas phase growth method using such a jig
DE4424929C2 (de) * 1994-07-14 1997-02-13 Wacker Chemie Gmbh Halterung für Trägerkörper in einer Vorrichtung zur Abscheidung von Halbleitermaterial
US6505795B1 (en) 2000-09-05 2003-01-14 Hughes Electronics Corporation Application of carbon fiber mesh for space and airborne platform applications
DE10101040A1 (de) * 2001-01-11 2002-07-25 Wacker Chemie Gmbh Vorrichtung und Verfahren zur Herstellung eines polykristallinen Siliciumstabes
CN100436315C (zh) * 2001-10-19 2008-11-26 株式会社德山 硅的制造方法
KR101639577B1 (ko) * 2008-04-14 2016-07-14 헴로크세미컨덕터코포레이션 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극
AU2009236679B2 (en) * 2008-04-14 2014-02-27 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
KR20110008078A (ko) * 2008-04-14 2011-01-25 헴로크세미컨덕터코포레이션 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극
IN2012DN00415A (fr) * 2009-07-14 2015-05-22 Hemlock Semiconductor Corp
JP2013507523A (ja) * 2009-10-09 2013-03-04 ヘムロック・セミコンダクター・コーポレーション 材料を蒸着するための製造装置および当該製造装置で使用される電極
DE102010003069A1 (de) 2010-03-19 2011-09-22 Wacker Chemie Ag Kegelförmige Graphitelektrode mit hochgezogenem Rand

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1307108A (fr) * 1960-11-30 1962-10-19 Siemens Ag Procédé pour fabriquer des couches semi-conductrices monocristallines
DE1207922B (de) * 1957-04-30 1965-12-30 Standard Elektrik Lorenz Ag Verfahren zum Herstellen von hochreinen Halbleitersubstanzen, insbesondere von Silizium

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3141849A (en) * 1960-07-04 1964-07-21 Wacker Chemie Gmbh Process for doping materials
US3335038A (en) * 1964-03-30 1967-08-08 Ibm Methods of producing single crystals on polycrystalline substrates and devices using same
US3808033A (en) * 1970-01-27 1974-04-30 Nat Steel Corp Continuous metallic strip hot-dip metal coating apparatus
JPS5236490B2 (fr) * 1972-11-27 1977-09-16
DE2321186B2 (de) * 1973-04-26 1979-03-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen eines Silicium- oder Siliciumcarbid-Rohres
US3900943A (en) * 1973-06-07 1975-08-26 Dow Corning Silicon semiconductor device array and method of making same
NL7508684A (nl) * 1974-07-29 1976-02-02 Motorola Inc Werkwijze en inrichting voor de bereiding van silicium.
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1207922B (de) * 1957-04-30 1965-12-30 Standard Elektrik Lorenz Ag Verfahren zum Herstellen von hochreinen Halbleitersubstanzen, insbesondere von Silizium
FR1307108A (fr) * 1960-11-30 1962-10-19 Siemens Ag Procédé pour fabriquer des couches semi-conductrices monocristallines

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010115542A1 (fr) * 2009-03-31 2010-10-14 Centrotherm Sitec Gmbh Dispositif de serrage et de mise en contact pour barres de silicium minces
US9238584B2 (en) 2009-03-31 2016-01-19 Sitec Gmbh Clamping and contacting device for thin silicon rods

Also Published As

Publication number Publication date
CA1087758A (fr) 1980-10-14
GB1566949A (en) 1980-05-08
US4141764A (en) 1979-02-27
JPS5386628A (en) 1978-07-31
DE2652218A1 (de) 1978-05-24

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