FR2390011A1 - - Google Patents

Info

Publication number
FR2390011A1
FR2390011A1 FR7812629A FR7812629A FR2390011A1 FR 2390011 A1 FR2390011 A1 FR 2390011A1 FR 7812629 A FR7812629 A FR 7812629A FR 7812629 A FR7812629 A FR 7812629A FR 2390011 A1 FR2390011 A1 FR 2390011A1
Authority
FR
France
Prior art keywords
zone
connection
strip
network
voltages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7812629A
Other languages
English (en)
Other versions
FR2390011B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of FR2390011A1 publication Critical patent/FR2390011A1/fr
Application granted granted Critical
Publication of FR2390011B1 publication Critical patent/FR2390011B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772—Vertical bipolar transistor in combination with resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

L'invention concerne un réseau résistif d'un circuit intégré monolithique à au moins deux tensions. Elle est caractérisée par le fait que le réseau est constitué par une unique zone diffusée dans le substrat en une zone principale en forme de bande avec à ses extrémités deux surfaces de contact pour le branchement avec une source de tension, et des résistances en dérivation identifiées par une zone secondaire en forme de bande perpendiculaire comportant une surface de contact servant au branchement sur l'une des bornes à impédance élevée d'entrée. L'invention s'applique en électronique.
FR7812629A 1977-05-04 1978-04-28 Expired FR2390011B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT23145/77A IT1115654B (it) 1977-05-04 1977-05-04 Partitore di tensione diffuso per circuito integrato monolitico

Publications (2)

Publication Number Publication Date
FR2390011A1 true FR2390011A1 (fr) 1978-12-01
FR2390011B1 FR2390011B1 (fr) 1982-05-21

Family

ID=11204252

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7812629A Expired FR2390011B1 (fr) 1977-05-04 1978-04-28

Country Status (3)

Country Link
US (1) US4181878A (fr)
FR (1) FR2390011B1 (fr)
IT (1) IT1115654B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0016605A1 (fr) * 1979-03-19 1980-10-01 National Semiconductor Corporation Echelle de résistances à circuit intégré
EP0109996A1 (fr) * 1982-11-26 1984-06-13 International Business Machines Corporation Structure de résistance autopolarisée et application à la réalisation de circuits d'interface

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1096633B (it) * 1978-06-13 1985-08-26 Ates Componenti Elettron Resistore diffuso in un corpo semiconduttore
JPS57100755A (en) * 1980-12-15 1982-06-23 Fujitsu Ltd Semiconductor device
US4447747A (en) * 1981-03-02 1984-05-08 Gte Laboratories Incorporated Waveform generating apparatus
US4649417A (en) * 1983-09-22 1987-03-10 International Business Machines Corporation Multiple voltage integrated circuit packaging substrate
FR2596922B1 (fr) * 1986-04-04 1988-05-20 Thomson Csf Resistance integree sur un substrat semi-conducteur
US4839633A (en) * 1987-06-24 1989-06-13 Texas Instruments Incorporated Asymmetric voltage monitor for series supplies
US4968901A (en) * 1989-05-16 1990-11-06 Burr-Brown Corporation Integrated circuit high frequency input attenuator circuit
US5506494A (en) * 1991-04-26 1996-04-09 Nippondenso Co., Ltd. Resistor circuit with reduced temperature coefficient of resistance
JP3049843B2 (ja) * 1991-04-26 2000-06-05 株式会社デンソー 抵抗体電極構造の形成方法
US5268651A (en) * 1991-09-23 1993-12-07 Crystal Semiconductor Corporation Low drift resistor structure
DE4217408C1 (de) * 1992-05-26 1993-11-25 Texas Instruments Deutschland Integrierter Spannungsteiler
US5339067A (en) * 1993-05-07 1994-08-16 Crystal Semiconductor Corporation Integrated voltage divider and circuit employing an integrated voltage divider
DE19601135C1 (de) * 1996-01-13 1997-05-28 Itt Ind Gmbh Deutsche Halbleiterstruktur
DE10213876C1 (de) * 2002-03-27 2003-10-02 Siemens Ag Anordnung zur Messung von Hochspannung
AU2003232988A1 (en) * 2002-06-11 2003-12-22 Koninklijke Philips Electronics N.V. Resistor network such as a resistor ladder network and a method for manufacturing such a resistor network
EP2022082A2 (fr) * 2006-04-21 2009-02-11 Nxp B.V. Circuit diviseur resistif
JP5072068B2 (ja) * 2006-12-25 2012-11-14 ルネサスエレクトロニクス株式会社 抵抗分割回路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6907227A (fr) * 1969-05-10 1970-11-12
JPS5220317B2 (fr) * 1974-12-25 1977-06-02

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
NV205/71 *
NV700/73 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0016605A1 (fr) * 1979-03-19 1980-10-01 National Semiconductor Corporation Echelle de résistances à circuit intégré
EP0109996A1 (fr) * 1982-11-26 1984-06-13 International Business Machines Corporation Structure de résistance autopolarisée et application à la réalisation de circuits d'interface

Also Published As

Publication number Publication date
FR2390011B1 (fr) 1982-05-21
DE2819149A1 (de) 1978-11-09
IT1115654B (it) 1986-02-03
US4181878A (en) 1980-01-01
DE2819149C2 (de) 1983-01-27

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