FR2386224B1 - - Google Patents
Info
- Publication number
- FR2386224B1 FR2386224B1 FR7807790A FR7807790A FR2386224B1 FR 2386224 B1 FR2386224 B1 FR 2386224B1 FR 7807790 A FR7807790 A FR 7807790A FR 7807790 A FR7807790 A FR 7807790A FR 2386224 B1 FR2386224 B1 FR 2386224B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/62—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
- H03K17/6221—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors combined with selecting means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/66—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will
- H03K17/665—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only
- H03K17/666—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only the output circuit comprising more than one controlled bipolar transistor
- H03K17/668—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only the output circuit comprising more than one controlled bipolar transistor in a symmetrical configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/68—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors specially adapted for switching AC currents or voltages
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04Q—SELECTING
- H04Q3/00—Selecting arrangements
- H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
- H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
- H04Q3/521—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/63—Combinations of vertical and lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/781,790 US4125855A (en) | 1977-03-28 | 1977-03-28 | Integrated semiconductor crosspoint arrangement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2386224A1 FR2386224A1 (fr) | 1978-10-27 |
| FR2386224B1 true FR2386224B1 (OSRAM) | 1981-12-11 |
Family
ID=25123949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7807790A Granted FR2386224A1 (fr) | 1977-03-28 | 1978-03-17 | Matrice de commutation de signaux bilateraux |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US4125855A (OSRAM) |
| JP (1) | JPS53120390A (OSRAM) |
| BE (1) | BE865243A (OSRAM) |
| CA (1) | CA1095182A (OSRAM) |
| CH (1) | CH626488A5 (OSRAM) |
| DE (1) | DE2812784A1 (OSRAM) |
| ES (1) | ES468296A1 (OSRAM) |
| FR (1) | FR2386224A1 (OSRAM) |
| GB (1) | GB1588695A (OSRAM) |
| IT (1) | IT1093920B (OSRAM) |
| NL (1) | NL7803206A (OSRAM) |
| SE (1) | SE439409B (OSRAM) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2932587C2 (de) * | 1979-08-10 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Breitbandkoppelanordnung mit einer Matrix von Koppelpunktschaltkreisen in ECL-Technik |
| JPS56148179A (en) * | 1980-04-21 | 1981-11-17 | Fujitsu Ltd | Converting method of ac-dc |
| US4402008A (en) * | 1981-08-27 | 1983-08-30 | Bell Telephone Laboratories, Incorporated | Wideband switching architecture |
| JPS58168255A (ja) * | 1982-03-30 | 1983-10-04 | Fujitsu Ltd | 半導体装置 |
| DE3435571A1 (de) * | 1984-09-27 | 1986-04-10 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte bipolare darlington-schaltung |
| JP7042719B2 (ja) * | 2018-06-21 | 2022-03-28 | 日揮グローバル株式会社 | 硫酸ニッケル化合物の製造方法 |
| CN109450434A (zh) * | 2018-12-14 | 2019-03-08 | 东莞博力威电池有限公司 | 一种双通道模拟选择电路 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1073111B (de) * | 1954-12-02 | 1960-01-14 | Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen | Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper |
| US3024448A (en) * | 1956-09-20 | 1962-03-06 | Int Standard Electric Corp | Static electric switches |
| US3564443A (en) * | 1966-06-29 | 1971-02-16 | Hitachi Ltd | Semiconductor integrated circuit device containing lateral and planar transistor in a semiconductor layer |
| US3524113A (en) * | 1967-06-15 | 1970-08-11 | Ibm | Complementary pnp-npn transistors and fabrication method therefor |
| BE758719A (fr) * | 1969-11-11 | 1971-05-10 | Philips Nv | Dispositif semiconducteur |
| US3697962A (en) * | 1970-11-27 | 1972-10-10 | Ibm | Two device monolithic bipolar memory array |
| DE2123395C3 (de) * | 1971-05-12 | 1983-03-10 | TE KA DE Felten & Guilleaume Fernmeldeanlagen GmbH, 8500 Nürnberg | Koppelpunkt einer elektronischen Koppelfeldeinrichtung mit Feldeffekttransistoren |
| FR2144595B1 (OSRAM) * | 1971-07-07 | 1974-09-06 | Radiotechnique Compelec | |
| JPS4871892A (OSRAM) * | 1971-12-27 | 1973-09-28 | ||
| US3786425A (en) * | 1972-12-18 | 1974-01-15 | Bell Telephone Labor Inc | Integrated circuit switching network providing crosspoint gain |
| US3913125A (en) * | 1973-06-11 | 1975-10-14 | Gte Laboratories Inc | Negative impedance converter |
| US3891480A (en) * | 1973-10-01 | 1975-06-24 | Honeywell Inc | Bipolar semiconductor device construction |
| US3945857A (en) * | 1974-07-01 | 1976-03-23 | Fairchild Camera And Instrument Corporation | Method for fabricating double-diffused, lateral transistors |
-
1977
- 1977-03-28 US US05/781,790 patent/US4125855A/en not_active Expired - Lifetime
-
1978
- 1978-02-16 CA CA297,129A patent/CA1095182A/en not_active Expired
- 1978-03-16 SE SE7803064A patent/SE439409B/sv not_active IP Right Cessation
- 1978-03-17 FR FR7807790A patent/FR2386224A1/fr active Granted
- 1978-03-22 GB GB11478/78A patent/GB1588695A/en not_active Expired
- 1978-03-23 DE DE19782812784 patent/DE2812784A1/de active Granted
- 1978-03-23 BE BE186215A patent/BE865243A/xx not_active IP Right Cessation
- 1978-03-23 NL NL7803206A patent/NL7803206A/xx not_active Application Discontinuation
- 1978-03-23 CH CH323778A patent/CH626488A5/de not_active IP Right Cessation
- 1978-03-24 IT IT21620/78A patent/IT1093920B/it active
- 1978-03-28 ES ES468296A patent/ES468296A1/es not_active Expired
- 1978-03-28 JP JP3492978A patent/JPS53120390A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2386224A1 (fr) | 1978-10-27 |
| JPS6337507B2 (OSRAM) | 1988-07-26 |
| SE439409B (sv) | 1985-06-10 |
| IT7821620A0 (it) | 1978-03-24 |
| IT1093920B (it) | 1985-07-26 |
| US4125855A (en) | 1978-11-14 |
| JPS53120390A (en) | 1978-10-20 |
| GB1588695A (en) | 1981-04-29 |
| ES468296A1 (es) | 1978-11-16 |
| CA1095182A (en) | 1981-02-03 |
| NL7803206A (nl) | 1978-10-02 |
| SE7803064L (sv) | 1978-09-29 |
| DE2812784C2 (OSRAM) | 1987-08-06 |
| DE2812784A1 (de) | 1978-10-05 |
| BE865243A (fr) | 1978-07-17 |
| CH626488A5 (OSRAM) | 1981-11-13 |