FR2386145B1 - - Google Patents

Info

Publication number
FR2386145B1
FR2386145B1 FR7809692A FR7809692A FR2386145B1 FR 2386145 B1 FR2386145 B1 FR 2386145B1 FR 7809692 A FR7809692 A FR 7809692A FR 7809692 A FR7809692 A FR 7809692A FR 2386145 B1 FR2386145 B1 FR 2386145B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7809692A
Other versions
FR2386145A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHARMAKADZE REVAZ
Original Assignee
CHARMAKADZE REVAZ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHARMAKADZE REVAZ filed Critical CHARMAKADZE REVAZ
Publication of FR2386145A1 publication Critical patent/FR2386145A1/fr
Application granted granted Critical
Publication of FR2386145B1 publication Critical patent/FR2386145B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
FR7809692A 1977-04-01 1978-03-31 Dispositif electroluminescent a semi-conducteurs Granted FR2386145A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU772468614A SU773795A1 (ru) 1977-04-01 1977-04-01 Светоизлучающий прибор

Publications (2)

Publication Number Publication Date
FR2386145A1 FR2386145A1 (fr) 1978-10-27
FR2386145B1 true FR2386145B1 (fr) 1983-01-21

Family

ID=20701921

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7809692A Granted FR2386145A1 (fr) 1977-04-01 1978-03-31 Dispositif electroluminescent a semi-conducteurs

Country Status (9)

Country Link
US (1) US4153905A (fr)
JP (1) JPS53144285A (fr)
AT (1) AT358639B (fr)
CH (1) CH628463A5 (fr)
DD (1) DD136781A1 (fr)
DE (1) DE2813918C2 (fr)
FR (1) FR2386145A1 (fr)
GB (1) GB1568351A (fr)
SU (1) SU773795A1 (fr)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4495514A (en) * 1981-03-02 1985-01-22 Eastman Kodak Company Transparent electrode light emitting diode and method of manufacture
DE3208638A1 (de) * 1982-03-10 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Lumineszenzdiode aus siliziumkarbid
JP2704181B2 (ja) * 1989-02-13 1998-01-26 日本電信電話株式会社 化合物半導体単結晶薄膜の成長方法
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
EP0444630B1 (fr) * 1990-02-28 1997-05-21 Toyoda Gosei Co., Ltd. Dispositif semi-conducteur émetteur de lumière comprenant un composé de nitride de gallium
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US5290393A (en) * 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
EP0576566B1 (fr) * 1991-03-18 1999-05-26 Trustees Of Boston University Procede de preparation et de dopage de couches minces de nitrure de gallium monocristallin tres isolant
US7235819B2 (en) * 1991-03-18 2007-06-26 The Trustees Of Boston University Semiconductor device having group III nitride buffer layer and growth layers
DE69333250T2 (de) * 1992-07-23 2004-09-16 Toyoda Gosei Co., Ltd. Lichtemittierende Vorrichtung aus einer Verbindung der Galliumnitridgruppe
JP2803742B2 (ja) * 1993-04-28 1998-09-24 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子及びその電極形成方法
DE69433926T2 (de) 1993-04-28 2005-07-21 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US7682709B1 (en) * 1995-10-30 2010-03-23 North Carolina State University Germanium doped n-type aluminum nitride epitaxial layers
US6261931B1 (en) 1997-06-20 2001-07-17 The Regents Of The University Of California High quality, semi-insulating gallium nitride and method and system for forming same
DE69839300T2 (de) 1997-12-15 2009-04-16 Philips Lumileds Lighting Company, LLC, San Jose Licht-emittierende Vorrichtung
KR20010079856A (ko) * 1998-09-18 2001-08-22 후지 하루노스케 반도체 수광소자
US6713789B1 (en) * 1999-03-31 2004-03-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
US6646292B2 (en) 1999-12-22 2003-11-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting device and method
US6946685B1 (en) 2000-08-31 2005-09-20 Lumileds Lighting U.S., Llc Light emitting semiconductor method and device
US6881983B2 (en) * 2002-02-25 2005-04-19 Kopin Corporation Efficient light emitting diodes and lasers
US6911079B2 (en) * 2002-04-19 2005-06-28 Kopin Corporation Method for reducing the resistivity of p-type II-VI and III-V semiconductors
US6734091B2 (en) 2002-06-28 2004-05-11 Kopin Corporation Electrode for p-type gallium nitride-based semiconductors
WO2003107442A2 (fr) 2002-06-17 2003-12-24 Kopin Corporation Electrode destinee a des semi-conducteurs a base de nitrure de gallium de type p
US7002180B2 (en) * 2002-06-28 2006-02-21 Kopin Corporation Bonding pad for gallium nitride-based light-emitting device
US6955985B2 (en) 2002-06-28 2005-10-18 Kopin Corporation Domain epitaxy for thin film growth
US7122841B2 (en) 2003-06-04 2006-10-17 Kopin Corporation Bonding pad for gallium nitride-based light-emitting devices
US20050179046A1 (en) * 2004-02-13 2005-08-18 Kopin Corporation P-type electrodes in gallium nitride-based light-emitting devices
US20050179042A1 (en) * 2004-02-13 2005-08-18 Kopin Corporation Monolithic integration and enhanced light extraction in gallium nitride-based light-emitting devices
MX2007007939A (es) * 2004-12-27 2007-11-07 Quantum Paper Inc Dispositivo de representacion visual emisivo direccionable e imprimible.
TWI303115B (en) * 2006-04-13 2008-11-11 Epistar Corp Semiconductor light emitting device
US8456392B2 (en) 2007-05-31 2013-06-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US9425357B2 (en) 2007-05-31 2016-08-23 Nthdegree Technologies Worldwide Inc. Diode for a printable composition
US8674593B2 (en) 2007-05-31 2014-03-18 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8889216B2 (en) * 2007-05-31 2014-11-18 Nthdegree Technologies Worldwide Inc Method of manufacturing addressable and static electronic displays
US9018833B2 (en) 2007-05-31 2015-04-28 Nthdegree Technologies Worldwide Inc Apparatus with light emitting or absorbing diodes
US9343593B2 (en) 2007-05-31 2016-05-17 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8415879B2 (en) 2007-05-31 2013-04-09 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8846457B2 (en) 2007-05-31 2014-09-30 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US9534772B2 (en) 2007-05-31 2017-01-03 Nthdegree Technologies Worldwide Inc Apparatus with light emitting diodes
US8809126B2 (en) 2007-05-31 2014-08-19 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8133768B2 (en) * 2007-05-31 2012-03-13 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US8877101B2 (en) 2007-05-31 2014-11-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, power generating or other electronic apparatus
US9419179B2 (en) 2007-05-31 2016-08-16 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8852467B2 (en) 2007-05-31 2014-10-07 Nthdegree Technologies Worldwide Inc Method of manufacturing a printable composition of a liquid or gel suspension of diodes
US8127477B2 (en) 2008-05-13 2012-03-06 Nthdegree Technologies Worldwide Inc Illuminating display systems
US7992332B2 (en) 2008-05-13 2011-08-09 Nthdegree Technologies Worldwide Inc. Apparatuses for providing power for illumination of a display object
US8314566B2 (en) 2011-02-22 2012-11-20 Quarkstar Llc Solid state lamp using light emitting strips
DE102014110054A1 (de) 2014-07-17 2016-01-21 Osram Oled Gmbh Optoelektronische Baugruppe und Verfahren zum Herstellen einer optoelektronischen Baugruppe

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852796A (en) * 1972-06-08 1974-12-03 Ibm GaN SWITCHING AND MEMORY DEVICES AND METHODS THEREFOR
US3740622A (en) * 1972-07-10 1973-06-19 Rca Corp Electroluminescent semiconductor device for generating ultra violet radiation
FR2197237A1 (en) * 1972-08-22 1974-03-22 Radiotechnique Compelec Semiconductor with two layers of different compsns - formed by gradually changing compsn deposited from one to the other
US3783353A (en) * 1972-10-27 1974-01-01 Rca Corp Electroluminescent semiconductor device capable of emitting light of three different wavelengths
US3849707A (en) * 1973-03-07 1974-11-19 Ibm PLANAR GaN ELECTROLUMINESCENT DEVICE
US3819974A (en) * 1973-03-12 1974-06-25 D Stevenson Gallium nitride metal-semiconductor junction light emitting diode
US3865655A (en) * 1973-09-24 1975-02-11 Rca Corp Method for diffusing impurities into nitride semiconductor crystals
US3869322A (en) * 1973-10-15 1975-03-04 Ibm Automatic P-N junction formation during growth of a heterojunction
US3922703A (en) * 1974-04-03 1975-11-25 Rca Corp Electroluminescent semiconductor device
FR2361744A1 (fr) * 1976-08-10 1978-03-10 Ibm Procede pour l'obtention d'une conductivite de type p dans un materiau semi-conducteur auto-compense et dispositifs semi-conducteurs en resultant
US4095331A (en) * 1976-11-04 1978-06-20 The United States Of America As Represented By The Secretary Of The Air Force Fabrication of an epitaxial layer diode in aluminum nitride on sapphire

Also Published As

Publication number Publication date
JPS53144285A (en) 1978-12-15
AT358639B (de) 1980-09-25
US4153905A (en) 1979-05-08
DE2813918C2 (de) 1984-04-05
FR2386145A1 (fr) 1978-10-27
SU773795A1 (ru) 1980-10-23
GB1568351A (en) 1980-05-29
DD136781A1 (de) 1979-07-25
JPS5649469B2 (fr) 1981-11-21
ATA224878A (de) 1980-02-15
DE2813918A1 (de) 1978-10-12
CH628463A5 (de) 1982-02-26

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Legal Events

Date Code Title Description
ST Notification of lapse