FR2383241A1 - Procede de depot multicouche par evaporation sous vide - Google Patents
Procede de depot multicouche par evaporation sous videInfo
- Publication number
- FR2383241A1 FR2383241A1 FR7806618A FR7806618A FR2383241A1 FR 2383241 A1 FR2383241 A1 FR 2383241A1 FR 7806618 A FR7806618 A FR 7806618A FR 7806618 A FR7806618 A FR 7806618A FR 2383241 A1 FR2383241 A1 FR 2383241A1
- Authority
- FR
- France
- Prior art keywords
- source
- substrate
- vapors
- sources
- straight line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
- H05K3/143—Masks therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Procédé de dépôt multicouche sous vide sur un substrat fixé à un porte-substrats rotatif par évaporations successives à partir de deux sources de vapeurs. On dispose l'une des sources de vapeurs Q à l'intérieur d'un cône engendré sur le côté de cette source par révolution autour de l'axe de rotation 0-0' du porte-substrats, d'une droit reliant l'autre source P à l'extrémité du substrat la plus distante de la source P, et l'on place l'autre source P à l'extérieur du cône engendré par révolution, autour de l'axe 0-0', d'une droite reliant la source P à l'extrémité du substrat la plus voisine de la source Q. On obtient ainsi deux couches déposées dont la première présente un motif débordant le motif de la seconde couche, ceci en une seule opération Application par exemple, à la réalisation de motifs de câblage Cr-Au, NiCr-Au ou Cr-Cu dans des circuits intégrés.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2476577A JPS53110367A (en) | 1977-03-09 | 1977-03-09 | Multi-layer film evaporation method |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2383241A1 true FR2383241A1 (fr) | 1978-10-06 |
FR2383241B1 FR2383241B1 (fr) | 1980-04-18 |
Family
ID=12147241
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7806618A Granted FR2383241A1 (fr) | 1977-03-09 | 1978-03-08 | Procede de depot multicouche par evaporation sous vide |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS53110367A (fr) |
CA (1) | CA1105333A (fr) |
DE (1) | DE2810316C3 (fr) |
FR (1) | FR2383241A1 (fr) |
GB (1) | GB1570777A (fr) |
NL (1) | NL7802611A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2587040A1 (fr) * | 1985-09-11 | 1987-03-13 | Sharp Kk | Appareil de croissance epitaxiale par faisceaux moleculaires |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63144597A (ja) * | 1986-12-09 | 1988-06-16 | 古河電気工業株式会社 | 基板上に部分膜及び多層膜を連続的に形成する方法 |
US7229669B2 (en) * | 2003-11-13 | 2007-06-12 | Honeywell International Inc. | Thin-film deposition methods and apparatuses |
CN102877026B (zh) * | 2012-09-27 | 2014-12-24 | 中国科学院长春光学精密机械与物理研究所 | 多层膜器件真空沉积装置 |
CN110331364B (zh) * | 2019-08-02 | 2021-05-07 | 深圳市华星光电半导体显示技术有限公司 | 蒸镀金属掩膜板 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2676114A (en) * | 1951-06-08 | 1954-04-20 | Libbey Owens Ford Glass Co | Method of producing graded coatings |
US2875505A (en) * | 1952-12-11 | 1959-03-03 | Bell Telephone Labor Inc | Semiconductor translating device |
US2906637A (en) * | 1953-05-19 | 1959-09-29 | Electronique Soc Gen | Method of forming a film a short distance from a surface |
FR1319182A (fr) * | 1961-04-13 | 1963-02-22 | Western Electric Co | Procédé et appareil pour fabriquer des organes semi-conducteurs |
GB1056678A (en) * | 1963-08-01 | 1967-01-25 | Hitachi Ltd | Improvements relating to cryosars |
DE1272680B (de) * | 1963-09-16 | 1968-07-11 | Halbleiterwerk Frankfurt Oder | Vorrichtung zum Vakuumaufdampfen von Schichten auf eine grosse Anzahl von mit Masken abgedeckten Unterlagen |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1521536A (en) * | 1923-08-21 | 1924-12-30 | Samuel A Holmes | Crutch chair |
-
1977
- 1977-03-09 JP JP2476577A patent/JPS53110367A/ja active Granted
-
1978
- 1978-03-03 GB GB863378A patent/GB1570777A/en not_active Expired
- 1978-03-06 CA CA298,247A patent/CA1105333A/fr not_active Expired
- 1978-03-08 FR FR7806618A patent/FR2383241A1/fr active Granted
- 1978-03-09 NL NL7802611A patent/NL7802611A/xx not_active Application Discontinuation
- 1978-03-09 DE DE19782810316 patent/DE2810316C3/de not_active Expired
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2676114A (en) * | 1951-06-08 | 1954-04-20 | Libbey Owens Ford Glass Co | Method of producing graded coatings |
US2875505A (en) * | 1952-12-11 | 1959-03-03 | Bell Telephone Labor Inc | Semiconductor translating device |
US2906637A (en) * | 1953-05-19 | 1959-09-29 | Electronique Soc Gen | Method of forming a film a short distance from a surface |
FR1319182A (fr) * | 1961-04-13 | 1963-02-22 | Western Electric Co | Procédé et appareil pour fabriquer des organes semi-conducteurs |
GB1056678A (en) * | 1963-08-01 | 1967-01-25 | Hitachi Ltd | Improvements relating to cryosars |
DE1272680B (de) * | 1963-09-16 | 1968-07-11 | Halbleiterwerk Frankfurt Oder | Vorrichtung zum Vakuumaufdampfen von Schichten auf eine grosse Anzahl von mit Masken abgedeckten Unterlagen |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2587040A1 (fr) * | 1985-09-11 | 1987-03-13 | Sharp Kk | Appareil de croissance epitaxiale par faisceaux moleculaires |
Also Published As
Publication number | Publication date |
---|---|
DE2810316A1 (de) | 1978-09-14 |
JPS53110367A (en) | 1978-09-27 |
NL7802611A (nl) | 1978-09-12 |
CA1105333A (fr) | 1981-07-21 |
GB1570777A (en) | 1980-07-09 |
JPS5751260B2 (fr) | 1982-11-01 |
DE2810316C3 (de) | 1981-07-09 |
FR2383241B1 (fr) | 1980-04-18 |
DE2810316B2 (de) | 1980-08-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR930005110A (ko) | 집적회로 제조시 재료를 증착시키는 개선된 방법 | |
FR2383241A1 (fr) | Procede de depot multicouche par evaporation sous vide | |
KR910018572A (ko) | 진공증착 장치 | |
DE69128480D1 (de) | Mit einer mit bindemittel angereicherter cvd- und pvd-schicht bedecktes schneidwerkzeug | |
JPS5785968A (en) | Chemically activated plasma vapor deposition apparatus | |
USD327810S (en) | Decalcomania for china dinnerware or similar article | |
WO2001020295A3 (fr) | Imagerie de phase par resonance de plasmon | |
EP0444253A3 (en) | Apparatus for the deposition of thin layers on a substrate | |
GB9123331D0 (en) | Apparatus for depositing a material on a substrate by chemical vapour deposition | |
EP0302684A3 (fr) | Procédé pour le dépôt d'un film mince | |
US3561993A (en) | Method of producing cyclically extending layers | |
FR2549641B1 (fr) | Ensemble a integration a grande echelle comportant un substrat en ceramique multicouche | |
DE69106978D1 (de) | Keramisches Substrat mit Silber enthaltender Verdrahtung. | |
USD250986S (en) | Tumbler or similar article | |
BE863867A (fr) | Procede pour deposer par pulverisation une couche additionnelle sur ou plusieurs couches situees a la surface d'un substrat | |
GR65355B (en) | Arrangement for the liquid deposit of connective producing on a fibrous fine leat,intending for the construction cigarettes filters | |
FR2726399B1 (fr) | Procede pour la preparation d'un substrat en vue du depot d'une couche mince de materiau supraconducteur | |
JPS5576065A (en) | Vacuum deposition unit | |
AU2146088A (en) | Ceramic base substrate wiyh a deposited multi-layer structure of a different material | |
Miremad et al. | Method for the Deposition of at Least One Thickness of at Least One Decorative Material on an Object, and Decorative Object Obtained by Such Method | |
CA2045890A1 (fr) | Procede de preparation de pellicule mince d'oxyde supraconducteur | |
USD337482S (en) | Decalcomania for china dinnerware | |
JPS6474777A (en) | Manufacture of micro-bridge type josephson device | |
GB8719794D0 (en) | Depositing surface layers on substrates | |
ATE153388T1 (de) | Verfahren zur abscheidung von mindestens einer stärke von mindestens einem dekorativen werkstoff über einen gegenstand und dadurch erhaltener gegenstand |