FR2375721A1 - Support intermediaire prevu pour le soutien et le contactage d'un corps semiconducteur - Google Patents

Support intermediaire prevu pour le soutien et le contactage d'un corps semiconducteur

Info

Publication number
FR2375721A1
FR2375721A1 FR7738005A FR7738005A FR2375721A1 FR 2375721 A1 FR2375721 A1 FR 2375721A1 FR 7738005 A FR7738005 A FR 7738005A FR 7738005 A FR7738005 A FR 7738005A FR 2375721 A1 FR2375721 A1 FR 2375721A1
Authority
FR
France
Prior art keywords
semiconductor body
contact
support
intermediate support
contact fingers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7738005A
Other languages
English (en)
Other versions
FR2375721B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2375721A1 publication Critical patent/FR2375721A1/fr
Application granted granted Critical
Publication of FR2375721B1 publication Critical patent/FR2375721B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4821Flat leads, e.g. lead frames with or without insulating supports
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49548Cross section geometry
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Packaging Frangible Articles (AREA)

Abstract

L'invention concerne un support intermédiaire prévu pour le soutien et le contactage d'un corps semiconducteur. Dans ce support intermédiaire qui comporte un châssis extérieur 10 auquel sont attenants les contacts extérieurs 11 d'où partent des doigts de contacts 12 , les contacts intérieurs portés par les doigts de contact sont constitués sous la forme de bosses ou plots de contact en relief 13, au moins en face des régions contiguës des doigts de contact 12, pour réaliser le contactage d'un corps semiconducteur 4. Application notamment aux circuits semiconducteurs multicouches ou aux circuits imprimés.
FR7738005A 1976-12-23 1977-12-16 Support intermediaire prevu pour le soutien et le contactage d'un corps semiconducteur Granted FR2375721A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762658532 DE2658532C2 (de) 1976-12-23 1976-12-23 Zwischenträger zur Halterung und Kontaktierung eines Halbleiterkörpers und Verfahren zu dessen Herstellung

Publications (2)

Publication Number Publication Date
FR2375721A1 true FR2375721A1 (fr) 1978-07-21
FR2375721B1 FR2375721B1 (fr) 1982-05-14

Family

ID=5996481

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7738005A Granted FR2375721A1 (fr) 1976-12-23 1977-12-16 Support intermediaire prevu pour le soutien et le contactage d'un corps semiconducteur

Country Status (5)

Country Link
JP (1) JPS5381074A (fr)
DE (1) DE2658532C2 (fr)
FR (1) FR2375721A1 (fr)
GB (1) GB1563870A (fr)
IT (1) IT1089189B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2456390A1 (fr) * 1979-05-11 1980-12-05 Thomson Csf Grille d'encapsulation, microboitier de circuit electronique utilisant cette grille et procede d'encapsulation de circuit electronique en microboitier
EP0154187A2 (fr) * 1984-03-08 1985-09-11 Olin Corporation Matériau pour le montage sur bande et structure pour la fabrication d'un circuit électronique
US4736236A (en) * 1984-03-08 1988-04-05 Olin Corporation Tape bonding material and structure for electronic circuit fabrication

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56152244A (en) * 1980-04-25 1981-11-25 Seiko Epson Corp Semiconductor device
US4795694A (en) * 1986-06-20 1989-01-03 Siemens Aktiengesellschaft Manufacture of fine structures for semiconductor contacting
JPS63142660A (ja) * 1986-12-04 1988-06-15 Dainippon Screen Mfg Co Ltd リ−ドフレ−ムの製造方法
JPH063818B2 (ja) * 1988-01-13 1994-01-12 株式会社三井ハイテック ワイヤレスボンディング方法
JPH03106009A (ja) * 1989-09-20 1991-05-02 Isuzu Motors Ltd 電気二重層コンデンサ
DE19916177B4 (de) * 1999-04-10 2006-01-26 Sokymat Gmbh Verfahren zum Kontaktieren des Halbleiterchips und Halbleiterchip mit drahtförmigen Anschlußstücken
DE102004030042B4 (de) 2004-06-22 2009-04-02 Infineon Technologies Ag Halbleiterbauelement mit einem auf einem Träger montierten Halbleiterchip, bei dem die vom Halbleiterchip auf den Träger übertragene Wärme begrenzt ist, sowie Verfahren zur Herstellung eines Halbleiterbauelementes
US7598603B2 (en) 2006-03-15 2009-10-06 Infineon Technologies Ag Electronic component having a power switch with an anode thereof mounted on a die attach region of a heat sink

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1184319A (en) * 1967-12-27 1970-03-11 Rca Corp Semiconductor Device Assembly
US3680206A (en) * 1969-06-23 1972-08-01 Ferranti Ltd Assemblies of semiconductor devices having mounting pillars as circuit connections
DE2127633B2 (de) * 1971-06-03 1975-03-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen eines Systemträgers zur Halterung und Kontaktierung eines Halbleiterkörpers

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2456390A1 (fr) * 1979-05-11 1980-12-05 Thomson Csf Grille d'encapsulation, microboitier de circuit electronique utilisant cette grille et procede d'encapsulation de circuit electronique en microboitier
EP0154187A2 (fr) * 1984-03-08 1985-09-11 Olin Corporation Matériau pour le montage sur bande et structure pour la fabrication d'un circuit électronique
EP0154187A3 (en) * 1984-03-08 1987-02-04 Olin Corporation Tape bonding material and structure for electronic circuit fabrication
US4736236A (en) * 1984-03-08 1988-04-05 Olin Corporation Tape bonding material and structure for electronic circuit fabrication

Also Published As

Publication number Publication date
JPS5381074A (en) 1978-07-18
FR2375721B1 (fr) 1982-05-14
DE2658532A1 (de) 1978-06-29
IT1089189B (it) 1985-06-18
GB1563870A (en) 1980-04-02
DE2658532C2 (de) 1984-02-16

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Legal Events

Date Code Title Description
ST Notification of lapse