FR2372511A1 - Procede de realisation d'emetteurs et de contacts de base sur un semiconducteur planaire - Google Patents

Procede de realisation d'emetteurs et de contacts de base sur un semiconducteur planaire

Info

Publication number
FR2372511A1
FR2372511A1 FR7635512A FR7635512A FR2372511A1 FR 2372511 A1 FR2372511 A1 FR 2372511A1 FR 7635512 A FR7635512 A FR 7635512A FR 7635512 A FR7635512 A FR 7635512A FR 2372511 A1 FR2372511 A1 FR 2372511A1
Authority
FR
France
Prior art keywords
layer
base
iii
doping
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7635512A
Other languages
English (en)
Other versions
FR2372511B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Priority to FR7635512A priority Critical patent/FR2372511A1/fr
Publication of FR2372511A1 publication Critical patent/FR2372511A1/fr
Application granted granted Critical
Publication of FR2372511B1 publication Critical patent/FR2372511B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L'invention concerne un procédé de fabrication de composants semiconducteurs de type planaire. Un transistor microonde NPN est fabriqué avec ouverture simultanée des fenêtres de contacts de base et d'émetteur à travers une couche de nitrure de silicium, puis dopages simultanés des contacts de base à partir d'une atmosphère contenant du bore et des émetteurs à partir d'un verre dopé à l'arsenic recouvrant les fenêtres d'émetteur. Application aux télécommunications.
FR7635512A 1976-11-25 1976-11-25 Procede de realisation d'emetteurs et de contacts de base sur un semiconducteur planaire Granted FR2372511A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7635512A FR2372511A1 (fr) 1976-11-25 1976-11-25 Procede de realisation d'emetteurs et de contacts de base sur un semiconducteur planaire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7635512A FR2372511A1 (fr) 1976-11-25 1976-11-25 Procede de realisation d'emetteurs et de contacts de base sur un semiconducteur planaire

Publications (2)

Publication Number Publication Date
FR2372511A1 true FR2372511A1 (fr) 1978-06-23
FR2372511B1 FR2372511B1 (fr) 1979-03-30

Family

ID=9180301

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7635512A Granted FR2372511A1 (fr) 1976-11-25 1976-11-25 Procede de realisation d'emetteurs et de contacts de base sur un semiconducteur planaire

Country Status (1)

Country Link
FR (1) FR2372511A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0007923A1 (fr) * 1977-08-31 1980-02-20 International Business Machines Corporation Procédé pour la fabrication d'un transistor latéral à double diffusion et d'un transistor complémentaire vertical, intégré avec le premier
EP0107851A1 (fr) * 1982-10-29 1984-05-09 Tektronix, Inc. Procédé de fabrication de dispositifs semi-conducteurs selon la méthode planaire
FR2549289A1 (fr) * 1983-07-12 1985-01-18 Control Data Corp Procede permettant d'appliquer un metal de barrage a la surface d'une pastille semiconductrice de type npn, et dispositif semiconducteur de type npn comportant ce barrage metallique
EP0183204A2 (fr) * 1984-11-22 1986-06-04 Hitachi, Ltd. Procédé pour fabriquer des dispositifs à circuits intégrés semi-conducteurs
FR2579826A1 (fr) * 1985-03-26 1986-10-03 Radiotechnique Compelec Procede de realisation de contacts metalliques d'un transistor, et transistor ainsi obtenu

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2186734A1 (en) * 1972-05-29 1974-01-11 Radiotechnique Compelec Microwave semiconductor component production - by simultaneous multiple diffusion from doped insulation films
US3839104A (en) * 1972-08-31 1974-10-01 Texas Instruments Inc Fabrication technique for high performance semiconductor devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2186734A1 (en) * 1972-05-29 1974-01-11 Radiotechnique Compelec Microwave semiconductor component production - by simultaneous multiple diffusion from doped insulation films
US3839104A (en) * 1972-08-31 1974-10-01 Texas Instruments Inc Fabrication technique for high performance semiconductor devices

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0007923A1 (fr) * 1977-08-31 1980-02-20 International Business Machines Corporation Procédé pour la fabrication d'un transistor latéral à double diffusion et d'un transistor complémentaire vertical, intégré avec le premier
EP0107851A1 (fr) * 1982-10-29 1984-05-09 Tektronix, Inc. Procédé de fabrication de dispositifs semi-conducteurs selon la méthode planaire
FR2549289A1 (fr) * 1983-07-12 1985-01-18 Control Data Corp Procede permettant d'appliquer un metal de barrage a la surface d'une pastille semiconductrice de type npn, et dispositif semiconducteur de type npn comportant ce barrage metallique
EP0183204A2 (fr) * 1984-11-22 1986-06-04 Hitachi, Ltd. Procédé pour fabriquer des dispositifs à circuits intégrés semi-conducteurs
EP0183204A3 (fr) * 1984-11-22 1988-02-10 Hitachi, Ltd. Procédé pour fabriquer des dispositifs à circuits intégrés semi-conducteurs
US5055420A (en) * 1984-11-22 1991-10-08 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit devices
FR2579826A1 (fr) * 1985-03-26 1986-10-03 Radiotechnique Compelec Procede de realisation de contacts metalliques d'un transistor, et transistor ainsi obtenu
EP0199386A1 (fr) * 1985-03-26 1986-10-29 Philips Composants Procédé de réalisation d'électrodes conductrices d'un élément de circuit et dispositif semi-conducteur ainsi obtenu

Also Published As

Publication number Publication date
FR2372511B1 (fr) 1979-03-30

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