FR2371777B1 - - Google Patents
Info
- Publication number
- FR2371777B1 FR2371777B1 FR7635294A FR7635294A FR2371777B1 FR 2371777 B1 FR2371777 B1 FR 2371777B1 FR 7635294 A FR7635294 A FR 7635294A FR 7635294 A FR7635294 A FR 7635294A FR 2371777 B1 FR2371777 B1 FR 2371777B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7635294A FR2371777A1 (fr) | 1976-11-18 | 1976-11-18 | Procede de fabrication d'une barriere de diffusion en nitrure de silicium sur un substrat de semiconducteur, en particulier du type iii-v |
| US05/850,951 US4137141A (en) | 1976-11-18 | 1977-11-14 | Process for producing a silicon nitride diffusion barrier on a semiconductor substrate, particularly III-V semiconductor substrates |
| JP13798777A JPS5364471A (en) | 1976-11-18 | 1977-11-18 | Method of producing silicon nitride barrier on semiconductor substrate |
| NL7712708A NL7712708A (nl) | 1976-11-18 | 1977-11-18 | Werkwijze voor het aanbrengen van een diffusie- barriere op een halfgeleidersubstraat door mid- del van kathodesputteren. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7635294A FR2371777A1 (fr) | 1976-11-18 | 1976-11-18 | Procede de fabrication d'une barriere de diffusion en nitrure de silicium sur un substrat de semiconducteur, en particulier du type iii-v |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2371777A1 FR2371777A1 (fr) | 1978-06-16 |
| FR2371777B1 true FR2371777B1 (US06368395-20020409-C00050.png) | 1980-08-22 |
Family
ID=9180215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7635294A Granted FR2371777A1 (fr) | 1976-11-18 | 1976-11-18 | Procede de fabrication d'une barriere de diffusion en nitrure de silicium sur un substrat de semiconducteur, en particulier du type iii-v |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4137141A (US06368395-20020409-C00050.png) |
| JP (1) | JPS5364471A (US06368395-20020409-C00050.png) |
| FR (1) | FR2371777A1 (US06368395-20020409-C00050.png) |
| NL (1) | NL7712708A (US06368395-20020409-C00050.png) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2593441B2 (ja) * | 1986-01-16 | 1997-03-26 | 日新電機株式会社 | 高硬度膜被覆工具材料とその製造方法 |
| FR2640078B1 (fr) * | 1988-10-20 | 1992-07-31 | Alcatel Transmission | Procede de depot de nitrure de silicium, dispositif de mise en oeuvre de ce procede, et application dudit procede a la fabrication de capacites hyperfrequences |
| US5047363A (en) * | 1990-09-04 | 1991-09-10 | Motorola, Inc. | Method and apparatus for reducing heterostructure acoustic charge transport device saw drive power requirements |
| US5217567A (en) * | 1992-02-27 | 1993-06-08 | International Business Machines Corporation | Selective etching process for boron nitride films |
| JP4128898B2 (ja) * | 2003-04-18 | 2008-07-30 | 古河電気工業株式会社 | 半導体素子の製造方法 |
| US20060045986A1 (en) * | 2004-08-30 | 2006-03-02 | Hochberg Arthur K | Silicon nitride from aminosilane using PECVD |
| US7732071B2 (en) * | 2006-11-10 | 2010-06-08 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording system with patterned medium and manufacturing process for the medium |
| US7670696B2 (en) * | 2007-05-01 | 2010-03-02 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording medium with patterned magnetic islands and nonmagnetic trenches and manufacturing method for suppressing surface diffusion of trench material |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL257102A (US06368395-20020409-C00050.png) * | 1960-10-18 | 1900-01-01 | ||
| US3600218A (en) * | 1968-05-15 | 1971-08-17 | Ibm | Method for depositing insulating films of silicon nitride and aluminum nitride |
| US3591477A (en) * | 1968-07-17 | 1971-07-06 | Mallory & Co Inc P R | Process for growth and removal of passivating films in semiconductors |
| US3849276A (en) * | 1971-03-19 | 1974-11-19 | Ibm | Process for forming reactive layers whose thickness is independent of time |
| GB1391842A (en) * | 1971-08-04 | 1975-04-23 | Elektromat Veb | Apparatus for coating substrates by cathode sputtering and for cleaning by ion bombardment in the same vacuum vessel |
-
1976
- 1976-11-18 FR FR7635294A patent/FR2371777A1/fr active Granted
-
1977
- 1977-11-14 US US05/850,951 patent/US4137141A/en not_active Expired - Lifetime
- 1977-11-18 JP JP13798777A patent/JPS5364471A/ja active Pending
- 1977-11-18 NL NL7712708A patent/NL7712708A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| US4137141A (en) | 1979-01-30 |
| JPS5364471A (en) | 1978-06-08 |
| FR2371777A1 (fr) | 1978-06-16 |
| NL7712708A (nl) | 1978-05-22 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |