FR2365885A1 - Circuit integre de commutation de puissance avec protection thermique automatique - Google Patents

Circuit integre de commutation de puissance avec protection thermique automatique

Info

Publication number
FR2365885A1
FR2365885A1 FR7728352A FR7728352A FR2365885A1 FR 2365885 A1 FR2365885 A1 FR 2365885A1 FR 7728352 A FR7728352 A FR 7728352A FR 7728352 A FR7728352 A FR 7728352A FR 2365885 A1 FR2365885 A1 FR 2365885A1
Authority
FR
France
Prior art keywords
thyristor
thermal protection
power switching
temperature
automatic thermal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7728352A
Other languages
English (en)
Other versions
FR2365885B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cutler Hammer World Trade Inc
Original Assignee
Cutler Hammer World Trade Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cutler Hammer World Trade Inc filed Critical Cutler Hammer World Trade Inc
Publication of FR2365885A1 publication Critical patent/FR2365885A1/fr
Application granted granted Critical
Publication of FR2365885B1 publication Critical patent/FR2365885B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66992—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by the variation of applied heat
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

L'invention concerne un circuit intégré de commutation de puissance avec une protection thermique automatique. intégrés Il comporte un substrat commun dans lequel sont intégrés un thyristor ou un triac de puissance et au moins un thyristor sensible à la température. Ce dernier est connecté en dérivation sur l'électrode de commande du thyristor et, lorsque la température du substrat dépasse une valeur prédéterminée, le thyristor sensible à la température est débloqué, dérive le courant de commande en bloquant ainsi le thyristor de puissance. L'invention s'applique notamment à des dispositifs de commande de température.
FR7728352A 1976-09-22 1977-09-20 Circuit integre de commutation de puissance avec protection thermique automatique Granted FR2365885A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/725,626 US4050083A (en) 1976-09-22 1976-09-22 Integrated thermally sensitive power switching semiconductor device, including a thermally self-protected version

Publications (2)

Publication Number Publication Date
FR2365885A1 true FR2365885A1 (fr) 1978-04-21
FR2365885B1 FR2365885B1 (fr) 1983-06-10

Family

ID=24915333

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7728352A Granted FR2365885A1 (fr) 1976-09-22 1977-09-20 Circuit integre de commutation de puissance avec protection thermique automatique

Country Status (5)

Country Link
US (1) US4050083A (fr)
JP (1) JPS5339885A (fr)
DE (1) DE2740539A1 (fr)
FR (1) FR2365885A1 (fr)
GB (1) GB1570809A (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272183A (en) * 1975-12-12 1977-06-16 Mitsubishi Electric Corp Semiconductor device with protecting device
US4891683A (en) * 1977-05-02 1990-01-02 Advanced Micro Devices, Inc. Integrated SCR current sourcing sinking device
JPS5951743B2 (ja) * 1978-11-08 1984-12-15 株式会社日立製作所 半導体集積装置
JPS5688297A (en) * 1979-12-20 1981-07-17 Mitsubishi Electric Corp Device for firing fluorescent lamp
DE3009192C2 (de) * 1980-03-11 1984-05-10 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Überlastschutzanordnung
US4492997A (en) * 1980-11-28 1985-01-08 Hitachi, Ltd. Reproducing and amplifying circuit for magnetoresistive head
US4458287A (en) * 1982-09-23 1984-07-03 Eaton Corporation Thermally protected semiconductor with accurate phase control
JPS60115263A (ja) * 1983-11-28 1985-06-21 Toshiba Corp 半導体装置
DE3671581D1 (de) * 1985-07-09 1990-06-28 Siemens Ag Mosfet mit temperaturschutz.
US4643589A (en) * 1985-08-09 1987-02-17 Lake Shore Cryotronics, Inc. Thermometry employing gallium aluminum arsenide diode sensor
US4754141A (en) * 1985-08-22 1988-06-28 High Technology Sensors, Inc. Modulated infrared source
US4757528A (en) * 1986-09-05 1988-07-12 Harris Corporation Thermally coupled information transmission across electrical isolation boundaries
JPS63182861A (ja) * 1987-01-26 1988-07-28 Toshiba Corp ゼロクロス型サイリスタ
US5230564A (en) * 1992-03-20 1993-07-27 Cray Research, Inc. Temperature monitoring system for air-cooled electric components
US6090726A (en) * 1996-07-05 2000-07-18 National Science Council Pretreatment method of a silicon wafer using nitric acid
US7020790B2 (en) * 2001-02-08 2006-03-28 Honeywell International Inc. Electric load management center including gateway module and multiple load management modules for distributing power to multiple loads
US7018095B2 (en) * 2002-06-27 2006-03-28 Intel Corporation Circuit for sensing on-die temperature at multiple locations
KR20140066281A (ko) * 2012-11-22 2014-06-02 삼성전기주식회사 반도체 모듈 테스트 장치 및 이를 이용한 테스트 방법
SG11201510784RA (en) * 2013-07-04 2016-02-26 Ev Group E Thallner Gmbh Method and device for treating a substrate surface
EP3736983A1 (fr) * 2019-05-10 2020-11-11 ABB Schweiz AG Circuit de thyristors et procédé de protection de thyristor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475666A (en) * 1966-08-15 1969-10-28 Jearld L Hutson Integrated semiconductor switch system
US3564293A (en) * 1968-04-16 1971-02-16 Power Semiconductors Inc Temperature-compensating thyristor control
US3600650A (en) * 1968-12-30 1971-08-17 Texas Instruments Inc Protected semiconductor device having sensor thermally coupled to electrode
US3609457A (en) * 1969-05-29 1971-09-28 Texas Instruments Inc Thermal protective system utilizing fault-responsive shunt means for a normally conducting triac
US3846674A (en) * 1969-07-15 1974-11-05 Rca Corp Overcurrent protection circuit including a heat sensitive element and a thyristor
US3622849A (en) * 1970-06-23 1971-11-23 Gen Electric Thyristor junction temperature monitor
US3708720A (en) * 1973-01-02 1973-01-02 Franklin Electric Co Inc Semiconductor thermal protection
US3920955A (en) * 1973-09-20 1975-11-18 Mitsubishi Electric Corp Electronic thermally sensitive switch device
US3959621A (en) * 1973-09-26 1976-05-25 Mitsubishi Denki Kabushiki Kaisha Thermally sensitive switch device
US3962692A (en) * 1974-11-18 1976-06-08 General Motors Corporation Solid state temperature responsive switch
US3971056A (en) * 1975-02-18 1976-07-20 Cutler-Hammer, Inc. Semiconductor temperature switches

Also Published As

Publication number Publication date
JPS5339885A (en) 1978-04-12
DE2740539A1 (de) 1978-03-23
GB1570809A (en) 1980-07-09
JPS6143861B2 (fr) 1986-09-30
US4050083A (en) 1977-09-20
FR2365885B1 (fr) 1983-06-10

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Legal Events

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