FR2363519A1 - Procede pour fabriquer des penta-ultraphosphates - Google Patents
Procede pour fabriquer des penta-ultraphosphatesInfo
- Publication number
- FR2363519A1 FR2363519A1 FR7725820A FR7725820A FR2363519A1 FR 2363519 A1 FR2363519 A1 FR 2363519A1 FR 7725820 A FR7725820 A FR 7725820A FR 7725820 A FR7725820 A FR 7725820A FR 2363519 A1 FR2363519 A1 FR 2363519A1
- Authority
- FR
- France
- Prior art keywords
- penta
- degrees
- ultra
- phosphate
- yttrium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/06—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using as solvent a component of the crystal composition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Lasers (AREA)
- Luminescent Compositions (AREA)
Abstract
L'invention concerne un procédé pour réaliser des penta-ultraphosphates. Dans un bain d'acide phosphorique on fait dissoudre des oxydes des éléments Nd, Sc, Y, Gd, Lu, La, Ga, In, TI, U, puis on chauffe ce mélange à environ 180 degrés C pendant 2 heures, puis à environ 360 degrés C-430 degrés C pendant au moins 20 heures et enfin à environ 500 degrés C pendant environ 80 heures, un germe étant introduit dans le mélange chauffé au bout d'environ 12 à 15 heures après que cette température de 500 degrés C air été obtenue. Application notamment à la réalisation de monocristaux de grande taille de penta-ultraphosphates.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19762639613 DE2639613A1 (de) | 1976-09-02 | 1976-09-02 | Verfahren zur herstellung von penta- ultraphosphaten |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2363519A1 true FR2363519A1 (fr) | 1978-03-31 |
Family
ID=5987020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7725820A Withdrawn FR2363519A1 (fr) | 1976-09-02 | 1977-08-24 | Procede pour fabriquer des penta-ultraphosphates |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5330498A (fr) |
DE (1) | DE2639613A1 (fr) |
FR (1) | FR2363519A1 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5648336A (en) * | 1979-09-22 | 1981-05-01 | Canon Inc | Feeding device of paper |
JPS5678739A (en) * | 1979-11-27 | 1981-06-27 | Usac Electronics Ind Co Ltd | Paper-feeding device for printer |
JPS5757130A (en) * | 1980-09-17 | 1982-04-06 | Mitsubishi Chem Ind Ltd | Transfer device |
JPS584538U (ja) * | 1981-06-29 | 1983-01-12 | コニカ株式会社 | 給紙装置 |
JPS58224927A (ja) * | 1982-06-23 | 1983-12-27 | Fujitsu Ltd | 帳票搬送装置 |
JPS5978016A (ja) * | 1982-10-25 | 1984-05-04 | イーストマン・コダック・カンパニー | シ−ト送り装置 |
CN111547695B (zh) * | 2020-05-19 | 2021-09-10 | 云南莱德福科技有限公司 | 一种网状分支结构的多聚磷酸盐及其制备方法 |
-
1976
- 1976-09-02 DE DE19762639613 patent/DE2639613A1/de active Pending
-
1977
- 1977-08-24 FR FR7725820A patent/FR2363519A1/fr not_active Withdrawn
- 1977-09-02 JP JP10576277A patent/JPS5330498A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5330498A (en) | 1978-03-22 |
DE2639613A1 (de) | 1978-03-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Bozorth et al. | Magnetic susceptibility of metallic europium | |
FR2363519A1 (fr) | Procede pour fabriquer des penta-ultraphosphates | |
Brixner et al. | Crystal growth and precision lattice constants of some Ln2 (WO4) 3-type rare earth tungstates | |
Daval et al. | Liquid phase epitaxy and magneto-optical properties of garnet films for integrated optics | |
Tsuchida et al. | Magnetic properties of neodymium compounds with Va elements | |
Kestigian et al. | Incorporation of increased concentrations of rare earth activator ions in optical quality single crystals of yttrium aluminum garnet | |
GB1439346A (en) | Method of growing crystalline layers | |
Borghese et al. | Strong magnetic relaxation of tetravalent iron ions in calcium‐doped yttrium iron garnet films | |
Aliev et al. | Superconductivity of the Compound CeCu sub 2 Si sub 2 | |
Winogradoff | Radiative Recombination within a Space‐Charge Region in a Semiconductor | |
Do et al. | Crystal growth and characterization of the solid solutions (ZnS) 1-x (CuMS2) x (M= Al, In, or Fe) | |
Desvignes et al. | Pr, Bi and Pb segregation in LPE growth of garnet films for magnetooptical applications | |
JPS5680116A (en) | Manufacture of substrate for magnetic bubble | |
Eigermann et al. | Solubility curves in high‐temperature melts for the growth of single crystals of rare earth vanadates and phosphates | |
GB1427879A (en) | Neadymium ultraphosphates | |
Malygin | The Mechanism of Strain Localization and Formation of Dislocationless Channels in Plastically Deformed BCC Metals.(Retroactive Coverage) | |
JPS6457519A (en) | Superconducting element of thin film type | |
Kabanov et al. | Dielectric and Nonlinear Optical Properties of Ferroelectric((NH sub (4)) sub (1-x) Rb sub (x)) sub (2) SO sub (4) Crystals | |
Chang | Perturbation of the V2? Band in Ca? doped KCl from Plastic and Elastic Deformation | |
GB1267817A (en) | Improvements in or relating to crystal growing | |
JPS6456357A (en) | Production of superconductive material | |
JPS6472996A (en) | Method for growing magneto-optical crystal | |
GB1076643A (en) | Method of growing garnet crystals | |
Okada et al. | Growth and Properties of PrB sub 6 and NdB sub 6 Single Crystals | |
Bamzai et al. | Studies on etching kinetics of flux grown RFeO 3 (R= Y, Er) crystals |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |