FR2362471A1 - Cellule de structure matricielle homogene - Google Patents

Cellule de structure matricielle homogene

Info

Publication number
FR2362471A1
FR2362471A1 FR7725004A FR7725004A FR2362471A1 FR 2362471 A1 FR2362471 A1 FR 2362471A1 FR 7725004 A FR7725004 A FR 7725004A FR 7725004 A FR7725004 A FR 7725004A FR 2362471 A1 FR2362471 A1 FR 2362471A1
Authority
FR
France
Prior art keywords
cell
flop
flip
matrix structure
logic circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7725004A
Other languages
English (en)
French (fr)
Other versions
FR2362471B1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GUSEV VALERY
Original Assignee
GUSEV VALERY
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GUSEV VALERY filed Critical GUSEV VALERY
Publication of FR2362471A1 publication Critical patent/FR2362471A1/fr
Application granted granted Critical
Publication of FR2362471B1 publication Critical patent/FR2362471B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
FR7725004A 1976-08-17 1977-08-16 Cellule de structure matricielle homogene Granted FR2362471A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU762398612A SU624295A1 (ru) 1976-08-17 1976-08-17 Ячейка пам ти дл матричной однородной структуры

Publications (2)

Publication Number Publication Date
FR2362471A1 true FR2362471A1 (fr) 1978-03-17
FR2362471B1 FR2362471B1 (de) 1980-07-11

Family

ID=20674913

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7725004A Granted FR2362471A1 (fr) 1976-08-17 1977-08-16 Cellule de structure matricielle homogene

Country Status (10)

Country Link
JP (1) JPS5341139A (de)
BG (1) BG30596A1 (de)
DD (1) DD132688A1 (de)
DE (1) DE2736061C2 (de)
FR (1) FR2362471A1 (de)
GB (1) GB1545338A (de)
IN (1) IN147561B (de)
PL (1) PL109105B1 (de)
RO (1) RO73483A (de)
SU (1) SU624295A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60226090A (ja) * 1984-04-25 1985-11-11 Nec Corp スタテイツクランダムアクセスメモリ回路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3638204A (en) * 1969-12-19 1972-01-25 Ibm Semiconductive cell for a storage having a plurality of simultaneously accessible locations
US3675218A (en) * 1970-01-15 1972-07-04 Ibm Independent read-write monolithic memory array

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3638204A (en) * 1969-12-19 1972-01-25 Ibm Semiconductive cell for a storage having a plurality of simultaneously accessible locations
US3643236A (en) * 1969-12-19 1972-02-15 Ibm Storage having a plurality of simultaneously accessible locations
US3675218A (en) * 1970-01-15 1972-07-04 Ibm Independent read-write monolithic memory array

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
EXBK/66 *
EXBK/71 *
EXBK/75 *

Also Published As

Publication number Publication date
BG30596A1 (en) 1981-07-15
IN147561B (de) 1980-04-12
DD132688A1 (de) 1978-10-18
DE2736061C2 (de) 1982-05-06
PL200139A1 (pl) 1978-04-24
GB1545338A (en) 1979-05-10
RO73483A (ro) 1981-11-04
PL109105B1 (en) 1980-05-31
JPS5341139A (en) 1978-04-14
FR2362471B1 (de) 1980-07-11
DE2736061A1 (de) 1978-02-23
SU624295A1 (ru) 1978-09-15

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