FR2358922A1 - Dispositif pour realiser le tirage d'un corps monocristallin a partir d'une pellicule en fusion - Google Patents

Dispositif pour realiser le tirage d'un corps monocristallin a partir d'une pellicule en fusion

Info

Publication number
FR2358922A1
FR2358922A1 FR7721890A FR7721890A FR2358922A1 FR 2358922 A1 FR2358922 A1 FR 2358922A1 FR 7721890 A FR7721890 A FR 7721890A FR 7721890 A FR7721890 A FR 7721890A FR 2358922 A1 FR2358922 A1 FR 2358922A1
Authority
FR
France
Prior art keywords
molten
pulling
mass
monocristalline
achieving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7721890A
Other languages
English (en)
French (fr)
Other versions
FR2358922B1 (cg-RX-API-DMAC10.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2358922A1 publication Critical patent/FR2358922A1/fr
Application granted granted Critical
Publication of FR2358922B1 publication Critical patent/FR2358922B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7721890A 1976-07-20 1977-07-18 Dispositif pour realiser le tirage d'un corps monocristallin a partir d'une pellicule en fusion Granted FR2358922A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762632614 DE2632614A1 (de) 1976-07-20 1976-07-20 Vorrichtung zum ziehen eines einkristallinen koerpers aus einem schmelzfilm

Publications (2)

Publication Number Publication Date
FR2358922A1 true FR2358922A1 (fr) 1978-02-17
FR2358922B1 FR2358922B1 (cg-RX-API-DMAC10.html) 1980-01-18

Family

ID=5983487

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7721890A Granted FR2358922A1 (fr) 1976-07-20 1977-07-18 Dispositif pour realiser le tirage d'un corps monocristallin a partir d'une pellicule en fusion

Country Status (7)

Country Link
US (1) US4213940A (cg-RX-API-DMAC10.html)
JP (1) JPS5311886A (cg-RX-API-DMAC10.html)
BE (1) BE857003A (cg-RX-API-DMAC10.html)
DE (1) DE2632614A1 (cg-RX-API-DMAC10.html)
FR (1) FR2358922A1 (cg-RX-API-DMAC10.html)
GB (1) GB1540037A (cg-RX-API-DMAC10.html)
IT (1) IT1084574B (cg-RX-API-DMAC10.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4271129A (en) 1979-03-06 1981-06-02 Rca Corporation Heat radiation deflectors within an EFG crucible
US4515755A (en) * 1981-05-11 1985-05-07 Toshiba Ceramics Co., Ltd. Apparatus for producing a silicon single crystal from a silicon melt
FR2549744B1 (fr) * 1983-07-29 1985-09-20 Commissariat Energie Atomique Procede de preparation de formes metalliques ou semi-metalliques minces ou massives, notamment de silicium
US5057487A (en) * 1987-10-29 1991-10-15 Texas Instruments Incorporated Crystal growth method for Y-Ba-Cu-O compounds
DE69208146T2 (de) * 1991-05-30 1996-06-20 Chichibu Cement Kk Rutil-Einkristalle sowie Verfahren zu deren Zuchtung
JP4497538B2 (ja) * 2004-12-22 2010-07-07 三菱鉛筆株式会社 筆記具
US20090130415A1 (en) * 2007-11-21 2009-05-21 Saint-Gobain Ceramics & Plastics, Inc. R-Plane Sapphire Method and Apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2893847A (en) * 1954-02-23 1959-07-07 Siemens Ag Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies
GB1015710A (en) * 1962-11-28 1966-01-05 Morgan Refractories Ltd Improved refractory products
DE1220832B (de) * 1964-09-22 1966-07-14 Siemens Ag Ziehduese zum Ziehen von Halbleiterkristallen aus einer Schmelze
US3650703A (en) * 1967-09-08 1972-03-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments, ribbon from the melt
US3870477A (en) * 1972-07-10 1975-03-11 Tyco Laboratories Inc Optical control of crystal growth

Also Published As

Publication number Publication date
GB1540037A (en) 1979-02-07
DE2632614A1 (de) 1978-01-26
IT1084574B (it) 1985-05-25
BE857003A (fr) 1977-11-14
JPS5311886A (en) 1978-02-02
US4213940A (en) 1980-07-22
FR2358922B1 (cg-RX-API-DMAC10.html) 1980-01-18

Similar Documents

Publication Publication Date Title
US3346414A (en) Vapor-liquid-solid crystal growth technique
FR2358922A1 (fr) Dispositif pour realiser le tirage d'un corps monocristallin a partir d'une pellicule en fusion
Atkins Liquid helium films. i. the thickness of the film
FR2336806A1 (fr) Vibreur piezo-electrique
MY104476A (en) Apparatus for manufacturing silicon single crystals.
US3493431A (en) Vapor-liquid-solid crystal growth technique
GB1157224A (en) Semiconductor Crystal Growing
MY104640A (en) Apparatus for manufacturing silicon single crystals.
JPS57194518A (en) Manufacture of polycrystalline silicon
US3577069A (en) Optical resonance cells containing an alloy of an alkali metal with another metal
FR2376697A2 (fr) Dispositif de fabrication en continu de monocristaux preformes en forme de plaques
US3173201A (en) Method of sealing a glass element within a metal member
GB1447817A (en) Acousto-optical filters
GB1038278A (en) A sampling tube for high temperature liquids particularly metal melts
JPS55652A (en) Electrode structure of thickness shear oscillator
JPS5515256A (en) X-ray mask
US3536538A (en) Crystal growth technique
Hollister et al. Crystallization Histories of Pyroxenes in Samples 12063 and 12065
FR2416729A1 (fr) Perfectionnement au procede de fabrication d'un monocristal de compose iii-v''
GB1095143A (en) Improvements in or relating to the production of single crystal material
JPS5466780A (en) Manufacture for semiconductor device
JPS57190316A (en) Manufacture of compound semiconductor device
JPS55100720A (en) Sealer for crystal vibrator
JP2574122B2 (ja) 化合物半導体の結晶成長方法および結晶成長装置
JPS53119694A (en) Semiconductor pressure transducer

Legal Events

Date Code Title Description
ST Notification of lapse