JPS5311886A - Apparatus for pulling single crystals from membrane of melt - Google Patents

Apparatus for pulling single crystals from membrane of melt

Info

Publication number
JPS5311886A
JPS5311886A JP8721377A JP8721377A JPS5311886A JP S5311886 A JPS5311886 A JP S5311886A JP 8721377 A JP8721377 A JP 8721377A JP 8721377 A JP8721377 A JP 8721377A JP S5311886 A JPS5311886 A JP S5311886A
Authority
JP
Japan
Prior art keywords
melt
membrane
single crystals
pulling single
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8721377A
Other languages
English (en)
Japanese (ja)
Inventor
Tsuerupusuto Manfureeto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5311886A publication Critical patent/JPS5311886A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP8721377A 1976-07-20 1977-07-20 Apparatus for pulling single crystals from membrane of melt Pending JPS5311886A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762632614 DE2632614A1 (de) 1976-07-20 1976-07-20 Vorrichtung zum ziehen eines einkristallinen koerpers aus einem schmelzfilm

Publications (1)

Publication Number Publication Date
JPS5311886A true JPS5311886A (en) 1978-02-02

Family

ID=5983487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8721377A Pending JPS5311886A (en) 1976-07-20 1977-07-20 Apparatus for pulling single crystals from membrane of melt

Country Status (7)

Country Link
US (1) US4213940A (cg-RX-API-DMAC10.html)
JP (1) JPS5311886A (cg-RX-API-DMAC10.html)
BE (1) BE857003A (cg-RX-API-DMAC10.html)
DE (1) DE2632614A1 (cg-RX-API-DMAC10.html)
FR (1) FR2358922A1 (cg-RX-API-DMAC10.html)
GB (1) GB1540037A (cg-RX-API-DMAC10.html)
IT (1) IT1084574B (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006175730A (ja) * 2004-12-22 2006-07-06 Mitsubishi Pencil Co Ltd 筆記具

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4271129A (en) 1979-03-06 1981-06-02 Rca Corporation Heat radiation deflectors within an EFG crucible
US4515755A (en) * 1981-05-11 1985-05-07 Toshiba Ceramics Co., Ltd. Apparatus for producing a silicon single crystal from a silicon melt
FR2549744B1 (fr) * 1983-07-29 1985-09-20 Commissariat Energie Atomique Procede de preparation de formes metalliques ou semi-metalliques minces ou massives, notamment de silicium
US5057487A (en) * 1987-10-29 1991-10-15 Texas Instruments Incorporated Crystal growth method for Y-Ba-Cu-O compounds
DE69208146T2 (de) * 1991-05-30 1996-06-20 Chichibu Cement Kk Rutil-Einkristalle sowie Verfahren zu deren Zuchtung
US20090130415A1 (en) * 2007-11-21 2009-05-21 Saint-Gobain Ceramics & Plastics, Inc. R-Plane Sapphire Method and Apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2893847A (en) * 1954-02-23 1959-07-07 Siemens Ag Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies
GB1015710A (en) * 1962-11-28 1966-01-05 Morgan Refractories Ltd Improved refractory products
DE1220832B (de) * 1964-09-22 1966-07-14 Siemens Ag Ziehduese zum Ziehen von Halbleiterkristallen aus einer Schmelze
US3650703A (en) * 1967-09-08 1972-03-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments, ribbon from the melt
US3870477A (en) * 1972-07-10 1975-03-11 Tyco Laboratories Inc Optical control of crystal growth

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006175730A (ja) * 2004-12-22 2006-07-06 Mitsubishi Pencil Co Ltd 筆記具

Also Published As

Publication number Publication date
GB1540037A (en) 1979-02-07
FR2358922A1 (fr) 1978-02-17
DE2632614A1 (de) 1978-01-26
IT1084574B (it) 1985-05-25
BE857003A (fr) 1977-11-14
US4213940A (en) 1980-07-22
FR2358922B1 (cg-RX-API-DMAC10.html) 1980-01-18

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