FR2358922B1 - - Google Patents

Info

Publication number
FR2358922B1
FR2358922B1 FR7721890A FR7721890A FR2358922B1 FR 2358922 B1 FR2358922 B1 FR 2358922B1 FR 7721890 A FR7721890 A FR 7721890A FR 7721890 A FR7721890 A FR 7721890A FR 2358922 B1 FR2358922 B1 FR 2358922B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7721890A
Other languages
French (fr)
Other versions
FR2358922A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2358922A1 publication Critical patent/FR2358922A1/fr
Application granted granted Critical
Publication of FR2358922B1 publication Critical patent/FR2358922B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7721890A 1976-07-20 1977-07-18 Dispositif pour realiser le tirage d'un corps monocristallin a partir d'une pellicule en fusion Granted FR2358922A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762632614 DE2632614A1 (de) 1976-07-20 1976-07-20 Vorrichtung zum ziehen eines einkristallinen koerpers aus einem schmelzfilm

Publications (2)

Publication Number Publication Date
FR2358922A1 FR2358922A1 (fr) 1978-02-17
FR2358922B1 true FR2358922B1 (cg-RX-API-DMAC10.html) 1980-01-18

Family

ID=5983487

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7721890A Granted FR2358922A1 (fr) 1976-07-20 1977-07-18 Dispositif pour realiser le tirage d'un corps monocristallin a partir d'une pellicule en fusion

Country Status (7)

Country Link
US (1) US4213940A (cg-RX-API-DMAC10.html)
JP (1) JPS5311886A (cg-RX-API-DMAC10.html)
BE (1) BE857003A (cg-RX-API-DMAC10.html)
DE (1) DE2632614A1 (cg-RX-API-DMAC10.html)
FR (1) FR2358922A1 (cg-RX-API-DMAC10.html)
GB (1) GB1540037A (cg-RX-API-DMAC10.html)
IT (1) IT1084574B (cg-RX-API-DMAC10.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4271129A (en) 1979-03-06 1981-06-02 Rca Corporation Heat radiation deflectors within an EFG crucible
US4515755A (en) * 1981-05-11 1985-05-07 Toshiba Ceramics Co., Ltd. Apparatus for producing a silicon single crystal from a silicon melt
FR2549744B1 (fr) * 1983-07-29 1985-09-20 Commissariat Energie Atomique Procede de preparation de formes metalliques ou semi-metalliques minces ou massives, notamment de silicium
US5057487A (en) * 1987-10-29 1991-10-15 Texas Instruments Incorporated Crystal growth method for Y-Ba-Cu-O compounds
DE69208146T2 (de) * 1991-05-30 1996-06-20 Chichibu Cement Kk Rutil-Einkristalle sowie Verfahren zu deren Zuchtung
JP4497538B2 (ja) * 2004-12-22 2010-07-07 三菱鉛筆株式会社 筆記具
US20090130415A1 (en) * 2007-11-21 2009-05-21 Saint-Gobain Ceramics & Plastics, Inc. R-Plane Sapphire Method and Apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2893847A (en) * 1954-02-23 1959-07-07 Siemens Ag Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies
GB1015710A (en) * 1962-11-28 1966-01-05 Morgan Refractories Ltd Improved refractory products
DE1220832B (de) * 1964-09-22 1966-07-14 Siemens Ag Ziehduese zum Ziehen von Halbleiterkristallen aus einer Schmelze
US3650703A (en) * 1967-09-08 1972-03-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments, ribbon from the melt
US3870477A (en) * 1972-07-10 1975-03-11 Tyco Laboratories Inc Optical control of crystal growth

Also Published As

Publication number Publication date
GB1540037A (en) 1979-02-07
FR2358922A1 (fr) 1978-02-17
DE2632614A1 (de) 1978-01-26
IT1084574B (it) 1985-05-25
BE857003A (fr) 1977-11-14
JPS5311886A (en) 1978-02-02
US4213940A (en) 1980-07-22

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Legal Events

Date Code Title Description
ST Notification of lapse