FR2357980A1 - Generateur de fonction pour produire une tension en un point nodal auquel sont raccordees des bascules bistables constituees par des transistors mos, et disposees dans des conducteurs de bits d'une memoire mos - Google Patents

Generateur de fonction pour produire une tension en un point nodal auquel sont raccordees des bascules bistables constituees par des transistors mos, et disposees dans des conducteurs de bits d'une memoire mos

Info

Publication number
FR2357980A1
FR2357980A1 FR7720481A FR7720481A FR2357980A1 FR 2357980 A1 FR2357980 A1 FR 2357980A1 FR 7720481 A FR7720481 A FR 7720481A FR 7720481 A FR7720481 A FR 7720481A FR 2357980 A1 FR2357980 A1 FR 2357980A1
Authority
FR
France
Prior art keywords
mos
voltage
function generator
constituted
nodal point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7720481A
Other languages
English (en)
French (fr)
Other versions
FR2357980B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2357980A1 publication Critical patent/FR2357980A1/fr
Application granted granted Critical
Publication of FR2357980B1 publication Critical patent/FR2357980B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Logic Circuits (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
FR7720481A 1976-07-08 1977-07-04 Generateur de fonction pour produire une tension en un point nodal auquel sont raccordees des bascules bistables constituees par des transistors mos, et disposees dans des conducteurs de bits d'une memoire mos Granted FR2357980A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2630797A DE2630797C2 (de) 1976-07-08 1976-07-08 Funktionsgenerator zur Erzeugung einer Spannung an einem Knoten, an den den Bitleitungen eines MOS-Speichers zugeordnete Flip-Flops aus MOS-Transistoren angeschlossen sind

Publications (2)

Publication Number Publication Date
FR2357980A1 true FR2357980A1 (fr) 1978-02-03
FR2357980B1 FR2357980B1 (enExample) 1984-08-10

Family

ID=5982530

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7720481A Granted FR2357980A1 (fr) 1976-07-08 1977-07-04 Generateur de fonction pour produire une tension en un point nodal auquel sont raccordees des bascules bistables constituees par des transistors mos, et disposees dans des conducteurs de bits d'une memoire mos

Country Status (5)

Country Link
US (1) US4119871A (enExample)
JP (1) JPS6044749B2 (enExample)
DE (1) DE2630797C2 (enExample)
FR (1) FR2357980A1 (enExample)
GB (1) GB1587130A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4168490A (en) * 1978-06-26 1979-09-18 Fairchild Camera And Instrument Corporation Addressable word line pull-down circuit
US4208730A (en) * 1978-08-07 1980-06-17 Rca Corporation Precharge circuit for memory array
US4543501A (en) * 1978-09-22 1985-09-24 Texas Instruments Incorporated High performance dynamic sense amplifier with dual channel grounding transistor
US4274013A (en) * 1979-02-09 1981-06-16 Bell Telephone Laboratories, Incorporated Sense amplifier
US4421996A (en) * 1981-10-09 1983-12-20 Advanced Micro Devices, Inc. Sense amplification scheme for random access memory
US4694205A (en) * 1985-06-03 1987-09-15 Advanced Micro Devices, Inc. Midpoint sense amplification scheme for a CMOS DRAM
GB0229763D0 (en) 2002-12-23 2003-01-29 Renishaw Plc Signal transmission system for a trigger probe

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE789500A (fr) * 1971-09-30 1973-03-29 Siemens Ag Memoire a semiconducteurs avec elements de memorisation a un seul transistor
DE2309192C3 (de) * 1973-02-23 1975-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Regenerierschaltung nach Art eines getasteten Flipflops und Verfahren zum Betrieb einer solchen Regenerierschaltung
US3949381A (en) * 1974-07-23 1976-04-06 International Business Machines Corporation Differential charge transfer sense amplifier
GB1523752A (en) * 1974-08-28 1978-09-06 Siemens Ag Dynamic semiconductor data stores
US4000413A (en) * 1975-05-27 1976-12-28 Intel Corporation Mos-ram
US3993917A (en) * 1975-05-29 1976-11-23 International Business Machines Corporation Parameter independent FET sense amplifier
US4025907A (en) * 1975-07-10 1977-05-24 Burroughs Corporation Interlaced memory matrix array having single transistor cells
US4050061A (en) * 1976-05-03 1977-09-20 Texas Instruments Incorporated Partitioning of MOS random access memory array
US4028557A (en) * 1976-05-21 1977-06-07 Bell Telephone Laboratories, Incorporated Dynamic sense-refresh detector amplifier

Also Published As

Publication number Publication date
US4119871A (en) 1978-10-10
JPS537141A (en) 1978-01-23
GB1587130A (en) 1981-04-01
FR2357980B1 (enExample) 1984-08-10
DE2630797B1 (de) 1977-12-15
DE2630797C2 (de) 1978-08-10
JPS6044749B2 (ja) 1985-10-05

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Legal Events

Date Code Title Description
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