GB1587130A - Binary data store read out circuits - Google Patents
Binary data store read out circuits Download PDFInfo
- Publication number
- GB1587130A GB1587130A GB28207/77A GB2820777A GB1587130A GB 1587130 A GB1587130 A GB 1587130A GB 28207/77 A GB28207/77 A GB 28207/77A GB 2820777 A GB2820777 A GB 2820777A GB 1587130 A GB1587130 A GB 1587130A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistor
- read
- node point
- timing signal
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000011156 evaluation Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 10
- 238000007599 discharging Methods 0.000 claims description 5
- 230000003321 amplification Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 2
- 210000000352 storage cell Anatomy 0.000 description 5
- 238000012854 evaluation process Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 241001269524 Dura Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000011157 data evaluation Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/418—Address circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Logic Circuits (AREA)
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2630797A DE2630797C2 (de) | 1976-07-08 | 1976-07-08 | Funktionsgenerator zur Erzeugung einer Spannung an einem Knoten, an den den Bitleitungen eines MOS-Speichers zugeordnete Flip-Flops aus MOS-Transistoren angeschlossen sind |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1587130A true GB1587130A (en) | 1981-04-01 |
Family
ID=5982530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB28207/77A Expired GB1587130A (en) | 1976-07-08 | 1977-07-06 | Binary data store read out circuits |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4119871A (enExample) |
| JP (1) | JPS6044749B2 (enExample) |
| DE (1) | DE2630797C2 (enExample) |
| FR (1) | FR2357980A1 (enExample) |
| GB (1) | GB1587130A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4168490A (en) * | 1978-06-26 | 1979-09-18 | Fairchild Camera And Instrument Corporation | Addressable word line pull-down circuit |
| US4208730A (en) * | 1978-08-07 | 1980-06-17 | Rca Corporation | Precharge circuit for memory array |
| US4543501A (en) * | 1978-09-22 | 1985-09-24 | Texas Instruments Incorporated | High performance dynamic sense amplifier with dual channel grounding transistor |
| US4274013A (en) * | 1979-02-09 | 1981-06-16 | Bell Telephone Laboratories, Incorporated | Sense amplifier |
| US4421996A (en) * | 1981-10-09 | 1983-12-20 | Advanced Micro Devices, Inc. | Sense amplification scheme for random access memory |
| US4694205A (en) * | 1985-06-03 | 1987-09-15 | Advanced Micro Devices, Inc. | Midpoint sense amplification scheme for a CMOS DRAM |
| GB0229763D0 (en) | 2002-12-23 | 2003-01-29 | Renishaw Plc | Signal transmission system for a trigger probe |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE789500A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Memoire a semiconducteurs avec elements de memorisation a un seul transistor |
| DE2309192C3 (de) * | 1973-02-23 | 1975-08-14 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Regenerierschaltung nach Art eines getasteten Flipflops und Verfahren zum Betrieb einer solchen Regenerierschaltung |
| US3949381A (en) * | 1974-07-23 | 1976-04-06 | International Business Machines Corporation | Differential charge transfer sense amplifier |
| GB1523752A (en) * | 1974-08-28 | 1978-09-06 | Siemens Ag | Dynamic semiconductor data stores |
| US4000413A (en) * | 1975-05-27 | 1976-12-28 | Intel Corporation | Mos-ram |
| US3993917A (en) * | 1975-05-29 | 1976-11-23 | International Business Machines Corporation | Parameter independent FET sense amplifier |
| US4025907A (en) * | 1975-07-10 | 1977-05-24 | Burroughs Corporation | Interlaced memory matrix array having single transistor cells |
| US4050061A (en) * | 1976-05-03 | 1977-09-20 | Texas Instruments Incorporated | Partitioning of MOS random access memory array |
| US4028557A (en) * | 1976-05-21 | 1977-06-07 | Bell Telephone Laboratories, Incorporated | Dynamic sense-refresh detector amplifier |
-
1976
- 1976-07-08 DE DE2630797A patent/DE2630797C2/de not_active Expired
-
1977
- 1977-06-02 US US05/802,815 patent/US4119871A/en not_active Expired - Lifetime
- 1977-07-04 FR FR7720481A patent/FR2357980A1/fr active Granted
- 1977-07-06 GB GB28207/77A patent/GB1587130A/en not_active Expired
- 1977-07-08 JP JP52081905A patent/JPS6044749B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2357980A1 (fr) | 1978-02-03 |
| US4119871A (en) | 1978-10-10 |
| JPS537141A (en) | 1978-01-23 |
| FR2357980B1 (enExample) | 1984-08-10 |
| DE2630797B1 (de) | 1977-12-15 |
| DE2630797C2 (de) | 1978-08-10 |
| JPS6044749B2 (ja) | 1985-10-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19940706 |