FR2356276B1 - - Google Patents

Info

Publication number
FR2356276B1
FR2356276B1 FR7718467A FR7718467A FR2356276B1 FR 2356276 B1 FR2356276 B1 FR 2356276B1 FR 7718467 A FR7718467 A FR 7718467A FR 7718467 A FR7718467 A FR 7718467A FR 2356276 B1 FR2356276 B1 FR 2356276B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7718467A
Other languages
French (fr)
Other versions
FR2356276A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2356276A1 publication Critical patent/FR2356276A1/fr
Application granted granted Critical
Publication of FR2356276B1 publication Critical patent/FR2356276B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
FR7718467A 1976-06-21 1977-06-16 Dispositif semi-conducteur a tension de rupture elevee Granted FR2356276A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69801476A 1976-06-21 1976-06-21

Publications (2)

Publication Number Publication Date
FR2356276A1 FR2356276A1 (fr) 1978-01-20
FR2356276B1 true FR2356276B1 (enrdf_load_html_response) 1983-02-04

Family

ID=24803556

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7718467A Granted FR2356276A1 (fr) 1976-06-21 1977-06-16 Dispositif semi-conducteur a tension de rupture elevee

Country Status (5)

Country Link
JP (1) JPS538069A (enrdf_load_html_response)
DE (1) DE2727487C2 (enrdf_load_html_response)
FR (1) FR2356276A1 (enrdf_load_html_response)
NL (1) NL180265C (enrdf_load_html_response)
SE (1) SE7707190L (enrdf_load_html_response)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1212404B (it) * 1979-02-22 1989-11-22 Rca Corp Metodo comportante un singolo attacco per la formazione di un mesa presentante una parete a piu'gradini.
DE3469830D1 (en) * 1983-12-07 1988-04-14 Bbc Brown Boveri & Cie Semiconductor device
DE3422051C2 (de) * 1984-06-14 1986-06-26 Brown, Boveri & Cie Ag, 6800 Mannheim Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelements
JPS6190463A (ja) * 1984-10-11 1986-05-08 Hitachi Ltd 半導体装置
EP0389863B1 (de) * 1989-03-29 1996-12-18 Siemens Aktiengesellschaft Verfahren zur Herstellung eines planaren pn-Übergangs hoher Spannungsfestigkeit
DE10349908C5 (de) * 2003-10-25 2009-02-12 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Herstellung eines zweifach passivierten Leistungshalbleiterbauelements mit einer MESA Randstruktur

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1052661A (enrdf_load_html_response) * 1963-01-30 1900-01-01
DE1539961A1 (de) * 1965-03-17 1970-01-22 Fuji Electric Co Ltd Halbleiterbauelement mit mindestens zwei pn-UEbergaengen im einkristallinen Halbleiterkoerper
DE1276207B (de) * 1966-09-09 1968-08-29 Licentia Gmbh Halbleiterbauelement

Also Published As

Publication number Publication date
SE7707190L (sv) 1977-12-22
JPS538069A (en) 1978-01-25
DE2727487A1 (de) 1977-12-29
DE2727487C2 (de) 1985-05-15
NL180265C (nl) 1987-01-16
JPS5639057B2 (enrdf_load_html_response) 1981-09-10
NL7706389A (nl) 1977-12-23
NL180265B (nl) 1986-08-18
FR2356276A1 (fr) 1978-01-20

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Legal Events

Date Code Title Description
ST Notification of lapse