FR2349956A1 - Procede de fabrication de couches composites metal-isolant pratiquement coplanaires et structures ainsi obtenues - Google Patents

Procede de fabrication de couches composites metal-isolant pratiquement coplanaires et structures ainsi obtenues

Info

Publication number
FR2349956A1
FR2349956A1 FR7705185A FR7705185A FR2349956A1 FR 2349956 A1 FR2349956 A1 FR 2349956A1 FR 7705185 A FR7705185 A FR 7705185A FR 7705185 A FR7705185 A FR 7705185A FR 2349956 A1 FR2349956 A1 FR 2349956A1
Authority
FR
France
Prior art keywords
structures
composite layers
insulating composite
manufacturing metal
layers practically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7705185A
Other languages
English (en)
French (fr)
Other versions
FR2349956B1 (cg-RX-API-DMAC10.html
Inventor
Janos Havas
John S Lechaton
Joseph S Logan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2349956A1 publication Critical patent/FR2349956A1/fr
Application granted granted Critical
Publication of FR2349956B1 publication Critical patent/FR2349956B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10W20/01—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10P76/202—
    • H10W20/058—
    • H10W20/063—
    • H10W20/40—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/143—Masks therefor
    • H10P14/6329—
    • H10P14/68—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/951—Lift-off
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24777—Edge feature
FR7705185A 1976-04-29 1977-02-18 Procede de fabrication de couches composites metal-isolant pratiquement coplanaires et structures ainsi obtenues Granted FR2349956A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/681,380 US4035276A (en) 1976-04-29 1976-04-29 Making coplanar layers of thin films

Publications (2)

Publication Number Publication Date
FR2349956A1 true FR2349956A1 (fr) 1977-11-25
FR2349956B1 FR2349956B1 (cg-RX-API-DMAC10.html) 1980-01-11

Family

ID=24735037

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7705185A Granted FR2349956A1 (fr) 1976-04-29 1977-02-18 Procede de fabrication de couches composites metal-isolant pratiquement coplanaires et structures ainsi obtenues

Country Status (6)

Country Link
US (2) US4035276A (cg-RX-API-DMAC10.html)
JP (1) JPS5828736B2 (cg-RX-API-DMAC10.html)
CA (1) CA1062658A (cg-RX-API-DMAC10.html)
DE (1) DE2709986C2 (cg-RX-API-DMAC10.html)
FR (1) FR2349956A1 (cg-RX-API-DMAC10.html)
IT (1) IT1115626B (cg-RX-API-DMAC10.html)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2350697A1 (fr) * 1976-05-06 1977-12-02 Cii Structure perfectionnee de circuits multicouches
DE2800635C2 (de) * 1978-01-07 1985-03-14 Fa. Leonhard Kurz, 8510 Fürth Prägefolie, insbesondere Heißprägefolie
JPS5513962A (en) * 1978-07-17 1980-01-31 Nec Corp Method of processing very fine electrode
US4184909A (en) * 1978-08-21 1980-01-22 International Business Machines Corporation Method of forming thin film interconnection systems
US4181755A (en) * 1978-11-21 1980-01-01 Rca Corporation Thin film pattern generation by an inverse self-lifting technique
US4389481A (en) * 1980-06-02 1983-06-21 Xerox Corporation Method of making planar thin film transistors, transistor arrays
US4307179A (en) * 1980-07-03 1981-12-22 International Business Machines Corporation Planar metal interconnection system and process
US4367119A (en) * 1980-08-18 1983-01-04 International Business Machines Corporation Planar multi-level metal process with built-in etch stop
US4337132A (en) * 1980-11-14 1982-06-29 Rockwell International Corporation Ion etching process with minimized redeposition
US4564997A (en) * 1981-04-21 1986-01-21 Nippon-Telegraph And Telephone Public Corporation Semiconductor device and manufacturing process thereof
JPS57176746A (en) * 1981-04-21 1982-10-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor integrated circuit and manufacture thereof
US4389294A (en) * 1981-06-30 1983-06-21 International Business Machines Corporation Method for avoiding residue on a vertical walled mesa
US4396458A (en) * 1981-12-21 1983-08-02 International Business Machines Corporation Method for forming planar metal/insulator structures
US4600663A (en) * 1982-07-06 1986-07-15 General Electric Company Microstrip line
US4703392A (en) * 1982-07-06 1987-10-27 General Electric Company Microstrip line and method for fabrication
US4461071A (en) * 1982-08-23 1984-07-24 Xerox Corporation Photolithographic process for fabricating thin film transistors
US4493855A (en) * 1982-12-23 1985-01-15 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
US4562091A (en) * 1982-12-23 1985-12-31 International Business Machines Corporation Use of plasma polymerized orgaosilicon films in fabrication of lift-off masks
US4606931A (en) * 1983-06-27 1986-08-19 International Business Machines Corporation Lift-off masking method
JPS60176830U (ja) * 1984-04-29 1985-11-22 有限会社　小森谷製作所 ねじ込シヤンク
CA1247464A (en) * 1985-05-13 1988-12-28 Hiroaki Nakamura Method for forming a planarized thin film
JPS62137629U (cg-RX-API-DMAC10.html) * 1986-02-19 1987-08-29
US4731340A (en) * 1987-02-24 1988-03-15 Rockwell International Corporation Dual lift-off self aligning process for making heterojunction bipolar transistors
US4917963A (en) * 1988-10-28 1990-04-17 Andus Corporation Graded composition primer layer
US5262354A (en) * 1992-02-26 1993-11-16 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
TW408420B (en) * 1998-08-14 2000-10-11 Mosel Vitelic Inc A method to measure if the connecting via in the metal wiring layer is aligned correctly
US6524937B1 (en) * 2000-08-23 2003-02-25 Tyco Electronics Corp. Selective T-gate process
US6768204B1 (en) * 2001-04-05 2004-07-27 Advanced Micro Devices, Inc. Self-aligned conductive plugs in a semiconductor device
US6503847B2 (en) * 2001-04-26 2003-01-07 Institute Of Microelectronics Room temperature wafer-to-wafer bonding by polydimethylsiloxane
DE10222609B4 (de) * 2002-04-15 2008-07-10 Schott Ag Verfahren zur Herstellung strukturierter Schichten auf Substraten und verfahrensgemäß beschichtetes Substrat
EP1506578A2 (de) * 2002-05-23 2005-02-16 Schott AG Glasmaterial für hochfrequenzanwendungen
US7205228B2 (en) * 2003-06-03 2007-04-17 Applied Materials, Inc. Selective metal encapsulation schemes
US20060009038A1 (en) * 2004-07-12 2006-01-12 International Business Machines Corporation Processing for overcoming extreme topography
KR101431466B1 (ko) * 2008-07-30 2014-08-22 삼성디스플레이 주식회사 유기 발광 소자의 제조 방법
CN105097433B (zh) * 2014-05-14 2018-05-08 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制备方法、电子装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3442012A (en) * 1967-08-03 1969-05-06 Teledyne Inc Method of forming a flip-chip integrated circuit
US3661761A (en) * 1969-06-02 1972-05-09 Ibm Rf sputtering apparatus for promoting resputtering of film during deposition
GB1286737A (en) * 1969-10-15 1972-08-23 Itt Multilevel conductive systems
FR2119930B1 (cg-RX-API-DMAC10.html) * 1970-12-31 1974-08-19 Ibm
JPS4830888A (cg-RX-API-DMAC10.html) * 1971-08-25 1973-04-23
JPS4960870A (cg-RX-API-DMAC10.html) * 1972-10-16 1974-06-13
US3844831A (en) * 1972-10-27 1974-10-29 Ibm Forming a compact multilevel interconnection metallurgy system for semi-conductor devices
US3868723A (en) * 1973-06-29 1975-02-25 Ibm Integrated circuit structure accommodating via holes
US3804738A (en) * 1973-06-29 1974-04-16 Ibm Partial planarization of electrically insulative films by resputtering
US3873361A (en) * 1973-11-29 1975-03-25 Ibm Method of depositing thin film utilizing a lift-off mask
US3976524A (en) * 1974-06-17 1976-08-24 Ibm Corporation Planarization of integrated circuit surfaces through selective photoresist masking
JPS5128780A (en) * 1974-09-04 1976-03-11 Hitachi Ltd Haisenso no keiseihoho
US3985597A (en) * 1975-05-01 1976-10-12 International Business Machines Corporation Process for forming passivated metal interconnection system with a planar surface

Also Published As

Publication number Publication date
US4035276A (en) 1977-07-12
JPS52132688A (en) 1977-11-07
IT1115626B (it) 1986-02-03
US4090006A (en) 1978-05-16
FR2349956B1 (cg-RX-API-DMAC10.html) 1980-01-11
CA1062658A (en) 1979-09-18
JPS5828736B2 (ja) 1983-06-17
DE2709986C2 (de) 1986-01-30
DE2709986A1 (de) 1977-11-17

Similar Documents

Publication Publication Date Title
FR2349956A1 (fr) Procede de fabrication de couches composites metal-isolant pratiquement coplanaires et structures ainsi obtenues
BE861497A (fr) Procede de fabrication de matieres composites et matieres composites ainsi obtenus
FR2339697A1 (fr) Etoffe composite et son procede de fabrication
FR2330535A1 (fr) Element de construction composite et son procede de fabrication
IT1090497B (it) Poliretan-poliuree e procedimento per la loro produzione ed applicazione
BE857635A (fr) Panneau de construction prefabrique et procede de fabrication
IT1091303B (it) Fenossi-ammino-propanoli e procedimento per la loro produzione
FR2336577A1 (fr) Aube composite et procede de fabrication
BE845444A (fr) Composite supraconducteur et son procede de fabrication
BE871557A (fr) Ruban composite sans fin et son procede de fabrication
IT1079804B (it) Benzofuranil-benzimidazoli e procedimento per la loro produzione ed applicazione
FR2349428A1 (fr) Procede et filiere de fabrication de structures tubulaires feuilletees de resines synthetiques
BE853068A (fr) Lamifie composite ceramique-metal joints poreux ceramiques et leur procede de fabrication
IT1149993B (it) Laminato ornamentale e procedimento per fabbricare lo stesso
FR2312617A1 (fr) Elements de construction composites et leur procede de fabrication
NO147518C (no) Fremgangsmaate for fremstilling av sammensatt fiberforsterket sementmaterial.
IT1079787B (it) Eteri sililici oligomerici e procedimento per la loro produzione ed applicazione
PT66613A (fr) Installation de production de poutrelles composites
AT348728B (de) Mehrschichtverbundplatte
FR2330751A1 (fr) Procede de fabrication de feuilles composites
BE891700Q (fr) Element de construction du type sandwich et procede pour sa fabrication
IT1083165B (it) Tri-isocianati e procedimento per la loro produzione ed applicazione
BE838904A (fr) Procede de fabrication de materiaux de construction et isolants poreux et legers
IT956103B (it) Strutture in foglio rinforzate composite e metodo per la loro fabbricazione
LU78714A1 (fr) Procede de fabrication d&#39;elements de construction composites en anhydrite

Legal Events

Date Code Title Description
ST Notification of lapse