FR2344125A1 - Procede de dopage a l'antimoine de regions enterrees dans un dispositif semi-conducteur et dispositif ainsi realise - Google Patents

Procede de dopage a l'antimoine de regions enterrees dans un dispositif semi-conducteur et dispositif ainsi realise

Info

Publication number
FR2344125A1
FR2344125A1 FR7606831A FR7606831A FR2344125A1 FR 2344125 A1 FR2344125 A1 FR 2344125A1 FR 7606831 A FR7606831 A FR 7606831A FR 7606831 A FR7606831 A FR 7606831A FR 2344125 A1 FR2344125 A1 FR 2344125A1
Authority
FR
France
Prior art keywords
antimony
substrate
doping
buried regions
realized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7606831A
Other languages
English (en)
French (fr)
Other versions
FR2344125B1 (enrdf_load_stackoverflow
Inventor
Michel De Brebisson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7606831A priority Critical patent/FR2344125A1/fr
Publication of FR2344125A1 publication Critical patent/FR2344125A1/fr
Application granted granted Critical
Publication of FR2344125B1 publication Critical patent/FR2344125B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
FR7606831A 1976-03-10 1976-03-10 Procede de dopage a l'antimoine de regions enterrees dans un dispositif semi-conducteur et dispositif ainsi realise Granted FR2344125A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7606831A FR2344125A1 (fr) 1976-03-10 1976-03-10 Procede de dopage a l'antimoine de regions enterrees dans un dispositif semi-conducteur et dispositif ainsi realise

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7606831A FR2344125A1 (fr) 1976-03-10 1976-03-10 Procede de dopage a l'antimoine de regions enterrees dans un dispositif semi-conducteur et dispositif ainsi realise

Publications (2)

Publication Number Publication Date
FR2344125A1 true FR2344125A1 (fr) 1977-10-07
FR2344125B1 FR2344125B1 (enrdf_load_stackoverflow) 1979-10-12

Family

ID=9170219

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7606831A Granted FR2344125A1 (fr) 1976-03-10 1976-03-10 Procede de dopage a l'antimoine de regions enterrees dans un dispositif semi-conducteur et dispositif ainsi realise

Country Status (1)

Country Link
FR (1) FR2344125A1 (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
FR2344125B1 (enrdf_load_stackoverflow) 1979-10-12

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Legal Events

Date Code Title Description
ST Notification of lapse