|
JPS5819129B2
(ja)
*
|
1975-12-10 |
1983-04-16 |
株式会社東芝 |
ハンドウタイソウチノ セイゾウホウホウ
|
|
FR2350697A1
(fr)
*
|
1976-05-06 |
1977-12-02 |
Cii |
Structure perfectionnee de circuits multicouches
|
|
JPS5421165A
(en)
*
|
1977-07-18 |
1979-02-17 |
Nec Corp |
Semiconductor device
|
|
US4149307A
(en)
*
|
1977-12-28 |
1979-04-17 |
Hughes Aircraft Company |
Process for fabricating insulated-gate field-effect transistors with self-aligned contacts
|
|
US4262399A
(en)
*
|
1978-11-08 |
1981-04-21 |
General Electric Co. |
Ultrasonic transducer fabricated as an integral park of a monolithic integrated circuit
|
|
US4181755A
(en)
*
|
1978-11-21 |
1980-01-01 |
Rca Corporation |
Thin film pattern generation by an inverse self-lifting technique
|
|
US4222816A
(en)
*
|
1978-12-26 |
1980-09-16 |
International Business Machines Corporation |
Method for reducing parasitic capacitance in integrated circuit structures
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|
JPS5595340A
(en)
*
|
1979-01-10 |
1980-07-19 |
Chiyou Lsi Gijutsu Kenkyu Kumiai |
Preparation of semiconductor device
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|
JPS55163860A
(en)
*
|
1979-06-06 |
1980-12-20 |
Toshiba Corp |
Manufacture of semiconductor device
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US4334950A
(en)
*
|
1979-07-17 |
1982-06-15 |
Bell Telephone Laboratories, Incorporated |
Advantageous fabrication technique for devices relying on magnetic properties
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|
EP0022580A1
(en)
*
|
1979-07-17 |
1981-01-21 |
Western Electric Company, Incorporated |
Advantageous fabrication technique for devices relying on magnetic properties
|
|
US4299862A
(en)
*
|
1979-11-28 |
1981-11-10 |
General Motors Corporation |
Etching windows in thick dielectric coatings overlying semiconductor device surfaces
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|
US4341009A
(en)
*
|
1980-12-05 |
1982-07-27 |
International Business Machines Corporation |
Method for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate
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|
US4400868A
(en)
*
|
1980-12-29 |
1983-08-30 |
Varian Associates, Inc. |
Method of making a transparent and electrically conductive bond
|
|
US4417914A
(en)
*
|
1981-03-16 |
1983-11-29 |
Fairchild Camera And Instrument Corporation |
Method for forming a low temperature binary glass
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|
JPS5815250A
(ja)
*
|
1981-07-21 |
1983-01-28 |
Fujitsu Ltd |
半導体装置の製造方法
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|
US4492717A
(en)
*
|
1981-07-27 |
1985-01-08 |
International Business Machines Corporation |
Method for forming a planarized integrated circuit
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JPS592352A
(ja)
*
|
1982-06-28 |
1984-01-07 |
Toshiba Corp |
半導体装置の製造方法
|
|
US4461071A
(en)
*
|
1982-08-23 |
1984-07-24 |
Xerox Corporation |
Photolithographic process for fabricating thin film transistors
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|
US4654295A
(en)
*
|
1983-12-05 |
1987-03-31 |
Energy Conversion Devices, Inc. |
Method of making short channel thin film field effect transistor
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|
US4656732A
(en)
*
|
1984-09-26 |
1987-04-14 |
Texas Instruments Incorporated |
Integrated circuit fabrication process
|
|
US4685030A
(en)
*
|
1985-04-29 |
1987-08-04 |
Energy Conversion Devices, Inc. |
Surface mounted circuits including hybrid circuits, having CVD interconnects, and method of preparing the circuits
|
|
US4654269A
(en)
*
|
1985-06-21 |
1987-03-31 |
Fairchild Camera & Instrument Corp. |
Stress relieved intermediate insulating layer for multilayer metalization
|
|
DE3627417A1
(de)
*
|
1986-08-13 |
1988-02-18 |
Siemens Ag |
Verfahren zum herstellen von niederohmigen verbindungen in der isolationsschicht zwischen zwei metallisierungsebenen
|
|
US4861425A
(en)
*
|
1988-08-22 |
1989-08-29 |
International Business Machines Corporation |
Lift-off process for terminal metals
|
|
US4933743A
(en)
*
|
1989-03-11 |
1990-06-12 |
Fairchild Semiconductor Corporation |
High performance interconnect system for an integrated circuit
|
|
US5256594A
(en)
*
|
1989-06-16 |
1993-10-26 |
Intel Corporation |
Masking technique for depositing gallium arsenide on silicon
|
|
DK166995B1
(da)
*
|
1990-08-09 |
1993-08-16 |
Topsoe Haldor As |
Katalysator til dampreforming af carbonhydrider og anvendelse ved fremstilling af hydrogen- og/eller carbonmonoxidrige gasser
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JP2871530B2
(ja)
*
|
1995-05-10 |
1999-03-17 |
日本電気株式会社 |
半導体装置の製造方法
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|
FR2758318B1
(fr)
*
|
1997-01-15 |
1999-02-05 |
Air Liquide |
Procede et installation d'elaboration d'un melange gazeux comportant un gaz porteur, un gaz oxydant et un silane
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|
US6334249B2
(en)
|
1997-04-22 |
2002-01-01 |
Texas Instruments Incorporated |
Cavity-filling method for reducing surface topography and roughness
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US20110140367A1
(en)
*
|
2008-06-09 |
2011-06-16 |
Nanofilm Technologies International Pte Ltd |
Novel coating having reduced stress and a method of depositing the coating on a substrate
|