FR2335045A1 - Procede de commande de la duree de vie des porteurs dans les dispositifs semi-conducteurs et dispositifs en resultant - Google Patents

Procede de commande de la duree de vie des porteurs dans les dispositifs semi-conducteurs et dispositifs en resultant

Info

Publication number
FR2335045A1
FR2335045A1 FR7632456A FR7632456A FR2335045A1 FR 2335045 A1 FR2335045 A1 FR 2335045A1 FR 7632456 A FR7632456 A FR 7632456A FR 7632456 A FR7632456 A FR 7632456A FR 2335045 A1 FR2335045 A1 FR 2335045A1
Authority
FR
France
Prior art keywords
devices
lifetime
carriers
procedure
controlling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7632456A
Other languages
English (en)
French (fr)
Other versions
FR2335045B1 (https=
Inventor
Michael R Poponiak
Tsu-Hsing Ye
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2335045A1 publication Critical patent/FR2335045A1/fr
Application granted granted Critical
Publication of FR2335045B1 publication Critical patent/FR2335045B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/40—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections
    • H10P95/402—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections of silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates
FR7632456A 1975-12-12 1976-10-18 Procede de commande de la duree de vie des porteurs dans les dispositifs semi-conducteurs et dispositifs en resultant Granted FR2335045A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64013775A 1975-12-12 1975-12-12

Publications (2)

Publication Number Publication Date
FR2335045A1 true FR2335045A1 (fr) 1977-07-08
FR2335045B1 FR2335045B1 (https=) 1979-09-21

Family

ID=24566992

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7632456A Granted FR2335045A1 (fr) 1975-12-12 1976-10-18 Procede de commande de la duree de vie des porteurs dans les dispositifs semi-conducteurs et dispositifs en resultant

Country Status (5)

Country Link
JP (1) JPS5272583A (https=)
DE (1) DE2642206A1 (https=)
FR (1) FR2335045A1 (https=)
GB (1) GB1503249A (https=)
IT (1) IT1123671B (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030856B1 (en) * 1979-12-13 1984-03-21 Fujitsu Limited Charge-pumping semiconductor memory cell comprising a charge-storage region and memory device using such a cell
EP0253059A3 (en) * 1986-03-20 1989-09-13 Hitachi, Ltd. Process for suppressing the rise of the buried layer of a semiconductor device
WO1995006956A1 (en) * 1993-09-03 1995-03-09 National Semiconductor Corporation Planar isolation method for use in fabrication of microelectronics
WO1996026536A1 (en) * 1995-02-20 1996-08-29 Rohm Co., Ltd. Semiconductor apparatus with crystal defects and process for its fabrication

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143563A (ja) * 1982-02-22 1983-08-26 Hitachi Ltd 半導体装置の製造方法
NL8301554A (nl) * 1982-05-06 1983-12-01 Mitsubishi Electric Corp Geintegreerde schakeling-inrichting van het cmos-type.

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030856B1 (en) * 1979-12-13 1984-03-21 Fujitsu Limited Charge-pumping semiconductor memory cell comprising a charge-storage region and memory device using such a cell
EP0253059A3 (en) * 1986-03-20 1989-09-13 Hitachi, Ltd. Process for suppressing the rise of the buried layer of a semiconductor device
WO1995006956A1 (en) * 1993-09-03 1995-03-09 National Semiconductor Corporation Planar isolation method for use in fabrication of microelectronics
WO1996026536A1 (en) * 1995-02-20 1996-08-29 Rohm Co., Ltd. Semiconductor apparatus with crystal defects and process for its fabrication

Also Published As

Publication number Publication date
DE2642206A1 (de) 1977-06-23
GB1503249A (en) 1978-03-08
FR2335045B1 (https=) 1979-09-21
JPS5272583A (en) 1977-06-17
IT1123671B (it) 1986-04-30

Similar Documents

Publication Publication Date Title
FR2320636A1 (fr) Procede pour reduire la duree de vie des porteurs minoritaires dans les semi-conducteurs et dispositifs en resultant
SE7600506L (sv) Stoppningsanordning
SE410911B (sv) Halvledaranordning
JPS5245288A (en) Semiconductor device
JPS51123078A (en) Fet semiconductor element
FR2456389B1 (fr) Structure d'electrodes pour dispositifs semi-conducteurs
JPS5216990A (en) Semiconductor device
FR2288392A1 (fr) Procede de realisation de dispositifs semiconducteurs
FR2307281A1 (fr) Procede et dispositif pour la fabrication technique de porte-objets prerevetus
SE418977B (sv) Anordning vid malapparat for lignocellulosahaltigt material
FR2312867A1 (fr) Perfectionnement aux dispositifs de connexion
FR2315174A1 (fr) Dispositif electroluminescent au phosphure de gallium et procede pour sa fabrication
BR7808124A (pt) Dispositivo semicondutor
FR2329344A1 (fr) Procede de croissance de monocristaux semiconducteurs
JPS5238892A (en) Semiconductor device
SE402839B (sv) Halvledaranordning och forfarande for dess framstellning
JPS529380A (en) Semiconductor device
JPS52119068A (en) Semiconductor device
IT1063263B (it) Dispositivo per la deposizione di materiale semiconduttore
FR2335045A1 (fr) Procede de commande de la duree de vie des porteurs dans les dispositifs semi-conducteurs et dispositifs en resultant
FR2297271A1 (fr) Dispositif pour la fabrication de materiau en nappes
FR2351065A1 (fr) Verre pour la passivation de dispositifs semiconducteurs
BR7800627A (pt) Dispositivo semicondutor
SE7600724L (sv) Kontrollanordning for tyristorer
BR7606348A (pt) Dispositivo para lavagem de impurezas organicas e barrosas de substancias solidas de granulacao grossa e fina continuamente aduzidas

Legal Events

Date Code Title Description
ST Notification of lapse