FR2326761A1 - Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvre - Google Patents

Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvre

Info

Publication number
FR2326761A1
FR2326761A1 FR7627472A FR7627472A FR2326761A1 FR 2326761 A1 FR2326761 A1 FR 2326761A1 FR 7627472 A FR7627472 A FR 7627472A FR 7627472 A FR7627472 A FR 7627472A FR 2326761 A1 FR2326761 A1 FR 2326761A1
Authority
FR
France
Prior art keywords
information
implementation
memory
electric chargers
storing information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7627472A
Other languages
English (en)
French (fr)
Other versions
FR2326761B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2543628A external-priority patent/DE2543628C2/de
Priority claimed from DE2543677A external-priority patent/DE2543677C3/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2326761A1 publication Critical patent/FR2326761A1/fr
Application granted granted Critical
Publication of FR2326761B1 publication Critical patent/FR2326761B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/335—Channel regions of field-effect devices of charge-coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR7627472A 1975-09-30 1976-09-13 Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvre Granted FR2326761A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2543628A DE2543628C2 (de) 1975-09-30 1975-09-30 Halbleiterbauelement zum Speichern von Information in Form von elektrischen Ladungen, Verfahren zu seinem Betrieb und Informatiosspeicher mit solchen Halbleiterbauelementen
DE2543677A DE2543677C3 (de) 1975-09-30 1975-09-30 Dynamisches Halbleiterspeicherelement und Verfahren zu dessen Betrieb

Publications (2)

Publication Number Publication Date
FR2326761A1 true FR2326761A1 (fr) 1977-04-29
FR2326761B1 FR2326761B1 (enrdf_load_stackoverflow) 1978-10-20

Family

ID=25769458

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7627472A Granted FR2326761A1 (fr) 1975-09-30 1976-09-13 Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvre

Country Status (5)

Country Link
JP (1) JPS5243381A (enrdf_load_stackoverflow)
FR (1) FR2326761A1 (enrdf_load_stackoverflow)
GB (1) GB1564617A (enrdf_load_stackoverflow)
IT (1) IT1072548B (enrdf_load_stackoverflow)
NL (1) NL7610696A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2406286A1 (fr) * 1977-10-13 1979-05-11 Mohsen Amr Memoire a semi-conducteurs a acces direct dynamique et cellule dynamique a transfert de charge vertical pour une telle memoire
EP0011686A1 (de) * 1978-09-29 1980-06-11 Siemens Aktiengesellschaft Hochintegrierbares dynamisches Speicherelement und Verfahren zu seinem Betrieb
FR2486310A1 (fr) * 1980-07-04 1982-01-08 Philips Nv Capacite a effet de champ

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162458A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Semiconductor device
JPS59154077A (ja) * 1983-02-23 1984-09-03 Clarion Co Ltd 可変容量素子
JPH0661465A (ja) * 1992-08-11 1994-03-04 Mitsubishi Electric Corp 赤外線撮像素子
CN105953975A (zh) * 2016-07-19 2016-09-21 农业部南京农业机械化研究所 砝码杠杆式可移动静标定装置及标定方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2144903A1 (enrdf_load_stackoverflow) * 1971-07-06 1973-02-16 Ibm

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2144903A1 (enrdf_load_stackoverflow) * 1971-07-06 1973-02-16 Ibm

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2406286A1 (fr) * 1977-10-13 1979-05-11 Mohsen Amr Memoire a semi-conducteurs a acces direct dynamique et cellule dynamique a transfert de charge vertical pour une telle memoire
EP0011686A1 (de) * 1978-09-29 1980-06-11 Siemens Aktiengesellschaft Hochintegrierbares dynamisches Speicherelement und Verfahren zu seinem Betrieb
FR2486310A1 (fr) * 1980-07-04 1982-01-08 Philips Nv Capacite a effet de champ

Also Published As

Publication number Publication date
FR2326761B1 (enrdf_load_stackoverflow) 1978-10-20
JPS5243381A (en) 1977-04-05
GB1564617A (en) 1980-04-10
JPS6348187B2 (enrdf_load_stackoverflow) 1988-09-28
IT1072548B (it) 1985-04-10
NL7610696A (nl) 1977-04-01

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Legal Events

Date Code Title Description
ST Notification of lapse