FR2312288A1 - Contact electrique resistant aux temperatures elevees et destine a l'epitaxie en phase liquide par effet peltier sur des composants de gallium iii-v - Google Patents

Contact electrique resistant aux temperatures elevees et destine a l'epitaxie en phase liquide par effet peltier sur des composants de gallium iii-v

Info

Publication number
FR2312288A1
FR2312288A1 FR7616323A FR7616323A FR2312288A1 FR 2312288 A1 FR2312288 A1 FR 2312288A1 FR 7616323 A FR7616323 A FR 7616323A FR 7616323 A FR7616323 A FR 7616323A FR 2312288 A1 FR2312288 A1 FR 2312288A1
Authority
FR
France
Prior art keywords
epitaxis
intended
components
liquid phase
electrical contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7616323A
Other languages
English (en)
French (fr)
Other versions
FR2312288B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips North America LLC
US Philips Corp
Original Assignee
US Philips Corp
North American Philips Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Philips Corp, North American Philips Corp filed Critical US Philips Corp
Publication of FR2312288A1 publication Critical patent/FR2312288A1/fr
Application granted granted Critical
Publication of FR2312288B1 publication Critical patent/FR2312288B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/103—Current controlled or induced growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
FR7616323A 1975-05-30 1976-05-31 Contact electrique resistant aux temperatures elevees et destine a l'epitaxie en phase liquide par effet peltier sur des composants de gallium iii-v Granted FR2312288A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/582,164 US3993511A (en) 1975-05-30 1975-05-30 High temperature electrical contact for Peltier-induced liquid phase epitaxy on intermetallic III-V compounds of gallium

Publications (2)

Publication Number Publication Date
FR2312288A1 true FR2312288A1 (fr) 1976-12-24
FR2312288B1 FR2312288B1 (enExample) 1980-04-30

Family

ID=24328091

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7616323A Granted FR2312288A1 (fr) 1975-05-30 1976-05-31 Contact electrique resistant aux temperatures elevees et destine a l'epitaxie en phase liquide par effet peltier sur des composants de gallium iii-v

Country Status (6)

Country Link
US (1) US3993511A (enExample)
JP (1) JPS51147251A (enExample)
CA (1) CA1057171A (enExample)
DE (1) DE2621757A1 (enExample)
FR (1) FR2312288A1 (enExample)
GB (1) GB1525182A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3731009A1 (de) * 1987-09-16 1989-03-30 Telefunken Electronic Gmbh Verfahren und vorrichtung zur fluessigphasenepitaxie

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2358021A1 (fr) * 1976-07-09 1978-02-03 Radiotechnique Compelec Procede de depot epitaxique d'un semi-conducteur par polarisation electrique d'une phase liquide
US4549912A (en) * 1981-06-11 1985-10-29 General Electric Company Anode and cathode connections for the practice of electromigration
US4381598A (en) * 1981-06-11 1983-05-03 General Electric Company Method of making anode and cathode connections for electromigration
RU2209260C2 (ru) * 2001-06-15 2003-07-27 Институт радиотехники и электроники РАН (Фрязинское отделение) Подложка для выращивания эпитаксиальных слоев арсенида галлия
RU2267565C2 (ru) * 2003-12-11 2006-01-10 Институт радиотехники и электроники РАН Подложка для выращивания эпитаксиальных слоев арсенида галлия
US7833473B2 (en) * 2004-07-30 2010-11-16 General Electric Company Material for storage and production of hydrogen, and related methods and apparatus
RU2308784C1 (ru) * 2006-01-12 2007-10-20 Институт Радиотехники И Электроники Российской Академии Наук (Ирэ Ран) Подложка для выращивания эпитаксиальных слоев арсенида галлия
US7938879B2 (en) * 2006-05-12 2011-05-10 Purdue Research Foundation Power generation from solid aluminum

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3411946A (en) * 1963-09-05 1968-11-19 Raytheon Co Process and apparatus for producing an intermetallic compound
US3879235A (en) * 1973-06-11 1975-04-22 Massachusetts Inst Technology Method of growing from solution materials exhibiting a peltier effect at the solid-melt interface

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
NV1046/73 *
NV2300/75 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3731009A1 (de) * 1987-09-16 1989-03-30 Telefunken Electronic Gmbh Verfahren und vorrichtung zur fluessigphasenepitaxie

Also Published As

Publication number Publication date
US3993511A (en) 1976-11-23
GB1525182A (en) 1978-09-20
DE2621757A1 (de) 1976-12-09
JPS552893B2 (enExample) 1980-01-22
CA1057171A (en) 1979-06-26
FR2312288B1 (enExample) 1980-04-30
JPS51147251A (en) 1976-12-17

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FR2312288A1 (fr) Contact electrique resistant aux temperatures elevees et destine a l'epitaxie en phase liquide par effet peltier sur des composants de gallium iii-v
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Legal Events

Date Code Title Description
DR Decision of the appeal court due to an appeal at law against decisions of the director of the inpi, except decision of lapse
ST Notification of lapse