CA1057171A - Electrical contact for peltier-induced liquid phase epitaxy on gallium compounds - Google Patents
Electrical contact for peltier-induced liquid phase epitaxy on gallium compoundsInfo
- Publication number
- CA1057171A CA1057171A CA253,496A CA253496A CA1057171A CA 1057171 A CA1057171 A CA 1057171A CA 253496 A CA253496 A CA 253496A CA 1057171 A CA1057171 A CA 1057171A
- Authority
- CA
- Canada
- Prior art keywords
- gallium
- substrate
- aluminium
- peltier
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004943 liquid phase epitaxy Methods 0.000 title abstract description 7
- 150000002259 gallium compounds Chemical class 0.000 title 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000004411 aluminium Substances 0.000 claims abstract description 36
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 36
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 35
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 235000012431 wafers Nutrition 0.000 claims description 40
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 19
- 229910002804 graphite Inorganic materials 0.000 claims description 19
- 239000010439 graphite Substances 0.000 claims description 19
- 239000007791 liquid phase Substances 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 239000007787 solid Substances 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
- 229910000765 intermetallic Inorganic materials 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 35
- 235000010210 aluminium Nutrition 0.000 description 31
- 238000002474 experimental method Methods 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 10
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
- 230000005679 Peltier effect Effects 0.000 description 7
- 238000001816 cooling Methods 0.000 description 7
- 230000033001 locomotion Effects 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000284 resting effect Effects 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000009740 moulding (composite fabrication) Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
- C30B19/103—Current controlled or induced growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/582,164 US3993511A (en) | 1975-05-30 | 1975-05-30 | High temperature electrical contact for Peltier-induced liquid phase epitaxy on intermetallic III-V compounds of gallium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1057171A true CA1057171A (en) | 1979-06-26 |
Family
ID=24328091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA253,496A Expired CA1057171A (en) | 1975-05-30 | 1976-05-27 | Electrical contact for peltier-induced liquid phase epitaxy on gallium compounds |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3993511A (enExample) |
| JP (1) | JPS51147251A (enExample) |
| CA (1) | CA1057171A (enExample) |
| DE (1) | DE2621757A1 (enExample) |
| FR (1) | FR2312288A1 (enExample) |
| GB (1) | GB1525182A (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2358021A1 (fr) * | 1976-07-09 | 1978-02-03 | Radiotechnique Compelec | Procede de depot epitaxique d'un semi-conducteur par polarisation electrique d'une phase liquide |
| US4549912A (en) * | 1981-06-11 | 1985-10-29 | General Electric Company | Anode and cathode connections for the practice of electromigration |
| US4381598A (en) * | 1981-06-11 | 1983-05-03 | General Electric Company | Method of making anode and cathode connections for electromigration |
| DE3731009A1 (de) * | 1987-09-16 | 1989-03-30 | Telefunken Electronic Gmbh | Verfahren und vorrichtung zur fluessigphasenepitaxie |
| RU2209260C2 (ru) * | 2001-06-15 | 2003-07-27 | Институт радиотехники и электроники РАН (Фрязинское отделение) | Подложка для выращивания эпитаксиальных слоев арсенида галлия |
| RU2267565C2 (ru) * | 2003-12-11 | 2006-01-10 | Институт радиотехники и электроники РАН | Подложка для выращивания эпитаксиальных слоев арсенида галлия |
| US7833473B2 (en) * | 2004-07-30 | 2010-11-16 | General Electric Company | Material for storage and production of hydrogen, and related methods and apparatus |
| RU2308784C1 (ru) * | 2006-01-12 | 2007-10-20 | Институт Радиотехники И Электроники Российской Академии Наук (Ирэ Ран) | Подложка для выращивания эпитаксиальных слоев арсенида галлия |
| US7938879B2 (en) * | 2006-05-12 | 2011-05-10 | Purdue Research Foundation | Power generation from solid aluminum |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3411946A (en) * | 1963-09-05 | 1968-11-19 | Raytheon Co | Process and apparatus for producing an intermetallic compound |
| US3879235A (en) * | 1973-06-11 | 1975-04-22 | Massachusetts Inst Technology | Method of growing from solution materials exhibiting a peltier effect at the solid-melt interface |
-
1975
- 1975-05-30 US US05/582,164 patent/US3993511A/en not_active Expired - Lifetime
-
1976
- 1976-05-15 DE DE19762621757 patent/DE2621757A1/de not_active Withdrawn
- 1976-05-27 CA CA253,496A patent/CA1057171A/en not_active Expired
- 1976-05-27 GB GB22058/76A patent/GB1525182A/en not_active Expired
- 1976-05-29 JP JP6180276A patent/JPS51147251A/ja active Granted
- 1976-05-31 FR FR7616323A patent/FR2312288A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2312288A1 (fr) | 1976-12-24 |
| US3993511A (en) | 1976-11-23 |
| GB1525182A (en) | 1978-09-20 |
| DE2621757A1 (de) | 1976-12-09 |
| JPS552893B2 (enExample) | 1980-01-22 |
| FR2312288B1 (enExample) | 1980-04-30 |
| JPS51147251A (en) | 1976-12-17 |
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