FR2312112A1 - Procede et appareil pour le dopage de corps semi-conducteurs par une methode de fusion de zone a gradient de temperature - Google Patents

Procede et appareil pour le dopage de corps semi-conducteurs par une methode de fusion de zone a gradient de temperature

Info

Publication number
FR2312112A1
FR2312112A1 FR7615029A FR7615029A FR2312112A1 FR 2312112 A1 FR2312112 A1 FR 2312112A1 FR 7615029 A FR7615029 A FR 7615029A FR 7615029 A FR7615029 A FR 7615029A FR 2312112 A1 FR2312112 A1 FR 2312112A1
Authority
FR
France
Prior art keywords
temperature gradient
semiconductor bodies
doping semiconductor
gradient zone
zone fusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7615029A
Other languages
English (en)
French (fr)
Inventor
John Kwadwo Boah
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/578,807 external-priority patent/US4001047A/en
Priority claimed from US05/578,736 external-priority patent/US4041278A/en
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2312112A1 publication Critical patent/FR2312112A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7615029A 1975-05-19 1976-05-19 Procede et appareil pour le dopage de corps semi-conducteurs par une methode de fusion de zone a gradient de temperature Withdrawn FR2312112A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/578,807 US4001047A (en) 1975-05-19 1975-05-19 Temperature gradient zone melting utilizing infrared radiation
US05/578,736 US4041278A (en) 1975-05-19 1975-05-19 Heating apparatus for temperature gradient zone melting

Publications (1)

Publication Number Publication Date
FR2312112A1 true FR2312112A1 (fr) 1976-12-17

Family

ID=27077566

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7615029A Withdrawn FR2312112A1 (fr) 1975-05-19 1976-05-19 Procede et appareil pour le dopage de corps semi-conducteurs par une methode de fusion de zone a gradient de temperature

Country Status (6)

Country Link
JP (1) JPS51140803A (de)
DE (1) DE2621418C2 (de)
FR (1) FR2312112A1 (de)
GB (1) GB1545113A (de)
NL (1) NL7605260A (de)
SE (1) SE416597B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0032920A1 (de) * 1979-07-31 1981-08-05 Western Electric Co Zonenschmelzverfahren mit photoinduziertem temparatugradienten.

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2638270C2 (de) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium
JPS5939711A (ja) * 1982-08-26 1984-03-05 Ushio Inc ウエハ−上のアモルファスシリコンもしくは多結晶シリコンをエピタキシアル成長させる方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2450901A1 (de) * 1973-10-30 1975-05-07 Gen Electric Halbleitervorrichtung mit ein grosses seitenverhaeltnis aufweisenden pn-uebergaengen und verfahren zur herstellung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2054828B2 (de) * 1970-11-07 1974-06-27 Applied Materials Technology, Inc. Santa Clara, Calif. (V.St.A.) Vorrichtung und Verfahren zur Bedampfung von Substraten
US3904442A (en) * 1973-10-30 1975-09-09 Gen Electric Method of making isolation grids in bodies of semiconductor material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2450901A1 (de) * 1973-10-30 1975-05-07 Gen Electric Halbleitervorrichtung mit ein grosses seitenverhaeltnis aufweisenden pn-uebergaengen und verfahren zur herstellung

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
NV931/68 *
NV931/72 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0032920A1 (de) * 1979-07-31 1981-08-05 Western Electric Co Zonenschmelzverfahren mit photoinduziertem temparatugradienten.
EP0032920A4 (de) * 1979-07-31 1984-05-29 Western Electric Co Zonenschmelzverfahren mit photoinduziertem temparatugradienten.

Also Published As

Publication number Publication date
JPS51140803A (en) 1976-12-04
DE2621418A1 (de) 1976-12-09
NL7605260A (nl) 1976-11-23
DE2621418C2 (de) 1981-12-17
SE7605678L (sv) 1976-11-20
SE416597B (sv) 1981-01-19
GB1545113A (en) 1979-05-02

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Legal Events

Date Code Title Description
ST Notification of lapse