FR2307334A1 - Cellule et matrice de memoire remanente - Google Patents

Cellule et matrice de memoire remanente

Info

Publication number
FR2307334A1
FR2307334A1 FR7534738A FR7534738A FR2307334A1 FR 2307334 A1 FR2307334 A1 FR 2307334A1 FR 7534738 A FR7534738 A FR 7534738A FR 7534738 A FR7534738 A FR 7534738A FR 2307334 A1 FR2307334 A1 FR 2307334A1
Authority
FR
France
Prior art keywords
remanting
matrix
memory cell
cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7534738A
Other languages
English (en)
Other versions
FR2307334B1 (fr
Inventor
Shakir Ahmed Abras
Robert Charles Dockerty
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2307334A1 publication Critical patent/FR2307334A1/fr
Application granted granted Critical
Publication of FR2307334B1 publication Critical patent/FR2307334B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
FR7534738A 1975-04-10 1975-11-07 Cellule et matrice de memoire remanente Granted FR2307334A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/567,045 US3992701A (en) 1975-04-10 1975-04-10 Non-volatile memory cell and array using substrate current

Publications (2)

Publication Number Publication Date
FR2307334A1 true FR2307334A1 (fr) 1976-11-05
FR2307334B1 FR2307334B1 (fr) 1979-01-19

Family

ID=24265512

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7534738A Granted FR2307334A1 (fr) 1975-04-10 1975-11-07 Cellule et matrice de memoire remanente

Country Status (5)

Country Link
US (1) US3992701A (fr)
JP (1) JPS51118340A (fr)
DE (1) DE2614698C2 (fr)
FR (1) FR2307334A1 (fr)
GB (1) GB1507820A (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4070652A (en) * 1975-11-14 1978-01-24 Westinghouse Electric Corporation Acousto-electric signal convolver, correlator and memory
US4222062A (en) * 1976-05-04 1980-09-09 American Microsystems, Inc. VMOS Floating gate memory device
US4173766A (en) * 1977-09-16 1979-11-06 Fairchild Camera And Instrument Corporation Insulated gate field-effect transistor read-only memory cell
US4301518A (en) * 1979-11-01 1981-11-17 Texas Instruments Incorporated Differential sensing of single ended memory array
US4558344A (en) * 1982-01-29 1985-12-10 Seeq Technology, Inc. Electrically-programmable and electrically-erasable MOS memory device
JP2664685B2 (ja) * 1987-07-31 1997-10-15 株式会社東芝 半導体装置の製造方法
JPH03112167A (ja) * 1989-09-27 1991-05-13 Toshiba Corp 不揮発性メモリセル
EP0667026A4 (fr) * 1992-11-02 1998-10-21 Nvx Corp Systeme de memoire flash et ses procedes de construction et d'utilisation.
US6521958B1 (en) * 1999-08-26 2003-02-18 Micron Technology, Inc. MOSFET technology for programmable address decode and correction
US6674667B2 (en) * 2001-02-13 2004-01-06 Micron Technology, Inc. Programmable fuse and antifuse and method therefor
US6868014B1 (en) * 2003-05-06 2005-03-15 Advanced Micro Devices, Inc. Memory device with reduced operating voltage having dielectric stack
US6862221B1 (en) * 2003-06-11 2005-03-01 Advanced Micro Devices, Inc. Memory device having a thin top dielectric and method of erasing same
US7327611B2 (en) * 2004-09-09 2008-02-05 Macronix International Co., Ltd. Method and apparatus for operating charge trapping nonvolatile memory
JP2006245415A (ja) * 2005-03-04 2006-09-14 Sharp Corp 半導体記憶装置及びその製造方法、並びに携帯電子機器
US7652923B2 (en) * 2007-02-02 2010-01-26 Macronix International Co., Ltd. Semiconductor device and memory and method of operating thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3508211A (en) * 1967-06-23 1970-04-21 Sperry Rand Corp Electrically alterable non-destructive readout field effect transistor memory
US3549911A (en) * 1968-12-05 1970-12-22 Rca Corp Variable threshold level field effect memory device
JPS4844585B1 (fr) * 1969-04-12 1973-12-25
US3846768A (en) * 1972-12-29 1974-11-05 Ibm Fixed threshold variable threshold storage device for use in a semiconductor storage array
US3836992A (en) * 1973-03-16 1974-09-17 Ibm Electrically erasable floating gate fet memory cell

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSACTIONS ON ELECTRON DEVICES", NEW YORK, VOLUME 19, NO. 12, DECEMBRE 1972 WHITE & CRICCHI: "CHARACTERIZATION OF THIN-OXIDE MNOS MEMORY TRANSISTORS", PAGES 1280-1288) *

Also Published As

Publication number Publication date
FR2307334B1 (fr) 1979-01-19
JPS51118340A (en) 1976-10-18
DE2614698A1 (de) 1976-10-21
US3992701A (en) 1976-11-16
DE2614698C2 (de) 1983-06-01
GB1507820A (en) 1978-04-19
JPS5751193B2 (fr) 1982-10-30

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Legal Events

Date Code Title Description
ST Notification of lapse