FR2297494A1 - Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriques - Google Patents

Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriques

Info

Publication number
FR2297494A1
FR2297494A1 FR7500310A FR7500310A FR2297494A1 FR 2297494 A1 FR2297494 A1 FR 2297494A1 FR 7500310 A FR7500310 A FR 7500310A FR 7500310 A FR7500310 A FR 7500310A FR 2297494 A1 FR2297494 A1 FR 2297494A1
Authority
FR
France
Prior art keywords
crystals
isoelectronic
manufactured
making semiconductor
nitrogen traps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7500310A
Other languages
English (en)
French (fr)
Other versions
FR2297494B1 (US20110158925A1-20110630-C00013.png
Inventor
Daniel Diguet
Bernard Legros
Marc Mahieu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7500310A priority Critical patent/FR2297494A1/fr
Priority to CA242,436A priority patent/CA1047636A/en
Priority to DE19752558757 priority patent/DE2558757A1/de
Priority to GB53302/75A priority patent/GB1533400A/en
Priority to JP71276A priority patent/JPS5193691A/ja
Publication of FR2297494A1 publication Critical patent/FR2297494A1/fr
Priority to US05/798,316 priority patent/US4154630A/en
Application granted granted Critical
Publication of FR2297494B1 publication Critical patent/FR2297494B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7500310A 1975-01-07 1975-01-07 Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriques Granted FR2297494A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7500310A FR2297494A1 (fr) 1975-01-07 1975-01-07 Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriques
CA242,436A CA1047636A (en) 1975-01-07 1975-12-23 Led's having isoelectrically built-in nitrogen
DE19752558757 DE2558757A1 (de) 1975-01-07 1975-12-24 Verfahren und herstellung von halbleiterkristallen mit iso-elektronischen stickstoffeinfangzentren und durch dieses verfahren hergestellte kristalle
GB53302/75A GB1533400A (en) 1975-01-07 1975-12-31 Electroluminescent diode manufacture
JP71276A JPS5193691A (US20110158925A1-20110630-C00013.png) 1975-01-07 1976-01-05
US05/798,316 US4154630A (en) 1975-01-07 1977-05-19 Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7500310A FR2297494A1 (fr) 1975-01-07 1975-01-07 Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriques

Publications (2)

Publication Number Publication Date
FR2297494A1 true FR2297494A1 (fr) 1976-08-06
FR2297494B1 FR2297494B1 (US20110158925A1-20110630-C00013.png) 1978-03-10

Family

ID=9149464

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7500310A Granted FR2297494A1 (fr) 1975-01-07 1975-01-07 Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriques

Country Status (5)

Country Link
JP (1) JPS5193691A (US20110158925A1-20110630-C00013.png)
CA (1) CA1047636A (US20110158925A1-20110630-C00013.png)
DE (1) DE2558757A1 (US20110158925A1-20110630-C00013.png)
FR (1) FR2297494A1 (US20110158925A1-20110630-C00013.png)
GB (1) GB1533400A (US20110158925A1-20110630-C00013.png)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS551717B2 (US20110158925A1-20110630-C00013.png) * 1975-01-29 1980-01-16
DE19824566C1 (de) * 1998-06-02 1999-12-02 Siemens Ag GaP-Halbleiteranordnung und Verfahren zur Herstellung derselben

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3646406A (en) * 1970-06-30 1972-02-29 Bell Telephone Labor Inc Electroluminescent pnjunction diodes with nonuniform distribution of isoelectronic traps
GB1316490A (en) * 1970-12-17 1973-05-09 Ferranti Ltd Electroluminescent devices
JPS5325634B2 (US20110158925A1-20110630-C00013.png) * 1973-04-04 1978-07-27

Also Published As

Publication number Publication date
CA1047636A (en) 1979-01-30
FR2297494B1 (US20110158925A1-20110630-C00013.png) 1978-03-10
GB1533400A (en) 1978-11-22
DE2558757C2 (US20110158925A1-20110630-C00013.png) 1987-04-23
JPS5193691A (US20110158925A1-20110630-C00013.png) 1976-08-17
DE2558757A1 (de) 1976-07-08

Similar Documents

Publication Publication Date Title
FR2335057A1 (fr) Procede de construction d'un module thermo-electrique et module ainsi obtenu
JPS535251A (en) Cross linked polyimide polymer compound and its production method
FR2300964A1 (fr) Procede d'ali
FR2301092A1 (fr) Procede de fabrication d'un semi-conducteur et semi-conducteur obtenu
FR2300045A1 (fr) Procede de synthese de l'ammoniac
FR2304601A1 (fr) Procede d'ammonoxydation
GB1557287A (en) Growing semiconductor crystals
BE855682A (fr) Procede d'encapsulement
BE872268A (fr) Procede de fabrication d'une bande d'ecrous et bande d'ecrous ainsi fabriquee
FR2322868A1 (fr) Procede de fabrication d'acyloxysilanes
RO72636A (ro) Procedeu de obtinere a unor polizaharide continind azot
FR2299769A1 (fr) Procede d'application
BE858610A (fr) Procede et dispositif de production de paquets
BE858893A (fr) Procede de production d'albumine de serum
FR2300104A1 (fr) Procede de fabrication d'un polyimide flexible et polyimide ainsi obtenu
FR2305416A1 (fr) Procede de preparation de tricosene-(9) et d'heneicosene-(9)
FR2297494A1 (fr) Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriques
BE845816A (fr) Couvercle a fixation par vissage et son procede de fabrication
BE862335A (fr) Procede de preparation de protoxyde d'azote
FR2305024A1 (fr) Procede de construction d'un dispositif semi-conducteur
FR2300398A1 (fr) Procede d'aplatissement de la courbe d
FR2331153A1 (fr) Procede de fabrication d'un dispositif semi-conducteur
FR2341201A1 (fr) Procede d'isolement entre regions d'un dispositif semiconducteur et dispositif ainsi obtenu
FR2303085A1 (fr) Procede de fabrication d'alliages
FR2321974A1 (fr) Procede d'ecriquage

Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
ST Notification of lapse