FR2296271A1 - Dispositif electroluminescent a region active confinee - Google Patents

Dispositif electroluminescent a region active confinee

Info

Publication number
FR2296271A1
FR2296271A1 FR7442663A FR7442663A FR2296271A1 FR 2296271 A1 FR2296271 A1 FR 2296271A1 FR 7442663 A FR7442663 A FR 7442663A FR 7442663 A FR7442663 A FR 7442663A FR 2296271 A1 FR2296271 A1 FR 2296271A1
Authority
FR
France
Prior art keywords
layer
conductivity type
thickness
diffused region
localised
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7442663A
Other languages
English (en)
French (fr)
Other versions
FR2296271B1 (enExample
Inventor
Jacques Lebailly
Daniel Diguet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7442663A priority Critical patent/FR2296271A1/fr
Publication of FR2296271A1 publication Critical patent/FR2296271A1/fr
Application granted granted Critical
Publication of FR2296271B1 publication Critical patent/FR2296271B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/811Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4202Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/824Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
FR7442663A 1974-12-24 1974-12-24 Dispositif electroluminescent a region active confinee Granted FR2296271A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7442663A FR2296271A1 (fr) 1974-12-24 1974-12-24 Dispositif electroluminescent a region active confinee

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7442663A FR2296271A1 (fr) 1974-12-24 1974-12-24 Dispositif electroluminescent a region active confinee

Publications (2)

Publication Number Publication Date
FR2296271A1 true FR2296271A1 (fr) 1976-07-23
FR2296271B1 FR2296271B1 (enExample) 1978-06-23

Family

ID=9146569

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7442663A Granted FR2296271A1 (fr) 1974-12-24 1974-12-24 Dispositif electroluminescent a region active confinee

Country Status (1)

Country Link
FR (1) FR2296271A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2531814A1 (fr) * 1982-08-10 1984-02-17 Thomson Csf Association monolithique de diodes electroluminescentes et de lentilles
EP0115204A3 (en) * 1982-12-27 1986-06-25 Mitsubishi Monsanto Chemical Co. Ltd. Epitaxial wafer for use in the production of an infrared led
EP0151718A3 (de) * 1983-12-08 1987-12-23 Asea Ab Halbleiterbauteil zur Erzeugung einer optischen Strahlung
DE4205526A1 (de) * 1992-02-24 1993-08-26 Telefunken Microelectron Halbleiteranordnung fuer eine infrarotdiode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2147322A1 (enExample) * 1971-07-29 1973-03-09 Licentia Gmbh

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2147322A1 (enExample) * 1971-07-29 1973-03-09 Licentia Gmbh

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE US "I.B.M. TECHNICAL DISCLOSURE BULLETIN", VOLUME 16. NO. 4, SEPTEMBRE 1973. "SIMPLE PLANAR DOUBLE-HETEROJUNCTION LASER STRUCTURE", W.P. DUMKE, PAGE 1186) *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2531814A1 (fr) * 1982-08-10 1984-02-17 Thomson Csf Association monolithique de diodes electroluminescentes et de lentilles
EP0101368A3 (fr) * 1982-08-10 1984-03-21 Thomson-Csf Association monolithique d'une diode électroluminescente et de lentilles
EP0115204A3 (en) * 1982-12-27 1986-06-25 Mitsubishi Monsanto Chemical Co. Ltd. Epitaxial wafer for use in the production of an infrared led
EP0151718A3 (de) * 1983-12-08 1987-12-23 Asea Ab Halbleiterbauteil zur Erzeugung einer optischen Strahlung
DE4205526A1 (de) * 1992-02-24 1993-08-26 Telefunken Microelectron Halbleiteranordnung fuer eine infrarotdiode

Also Published As

Publication number Publication date
FR2296271B1 (enExample) 1978-06-23

Similar Documents

Publication Publication Date Title
Wortman et al. Effect of Mechanical Stress on p‐n Junction Device Characteristics
GB1514548A (en) Multi-layer semiconductor photovoltaic device
US3345221A (en) Method of making a semiconductor device having improved pn junction avalanche characteristics
JPS6410644A (en) Manufacture of semiconductor device
GB1078798A (en) Improvements in or relating to field effect transistor devices
FR2296271A1 (fr) Dispositif electroluminescent a region active confinee
KR970054357A (ko) 반도체장치 및 그 제조방법
US2907969A (en) Photoelectric device
GB1020097A (en) Semiconductor switching device and method of manufacture
JPS55165669A (en) Bipolar-mos device
JPS5473585A (en) Gate turn-off thyristor
US3277351A (en) Method of manufacturing semiconductor devices
JPS635518A (ja) 半導体装置の製造方法
JPS5587429A (en) Manufacture of semiconductor device
Zipperian et al. A gallium phosphide high‐temperature bipolar junction transistor
GB1260026A (en) A method of manufacturing a semiconductor photo-sensitive device
US3443174A (en) L-h junction lateral transistor
GB1054331A (enExample)
GB1273199A (en) A method for manufacturing a semiconductor device having diffusion junctions
US3977016A (en) Electroluminescent device and method of manufacturing same
GB1028485A (en) Semiconductor devices
GB1353840A (en) High voltage schottky barrier device and method of manufacture
JPS54120588A (en) Gate turn-off thyristor
JPS564285A (en) Manufacture of planar type semiconductor device
JPS5516412A (en) Semiconductor device

Legal Events

Date Code Title Description
ST Notification of lapse