FR2296271A1 - Electroluminescent heterostructure semiconductor device - comprising three layers on a transparent substrate, of partly compensated matls. - Google Patents

Electroluminescent heterostructure semiconductor device - comprising three layers on a transparent substrate, of partly compensated matls.

Info

Publication number
FR2296271A1
FR2296271A1 FR7442663A FR7442663A FR2296271A1 FR 2296271 A1 FR2296271 A1 FR 2296271A1 FR 7442663 A FR7442663 A FR 7442663A FR 7442663 A FR7442663 A FR 7442663A FR 2296271 A1 FR2296271 A1 FR 2296271A1
Authority
FR
France
Prior art keywords
layer
electroluminescent
conductivity type
semiconductor device
matls
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7442663A
Other languages
French (fr)
Other versions
FR2296271B1 (en
Inventor
Jacques Lebailly
Daniel Diguet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7442663A priority Critical patent/FR2296271A1/en
Publication of FR2296271A1 publication Critical patent/FR2296271A1/en
Application granted granted Critical
Publication of FR2296271B1 publication Critical patent/FR2296271B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)

Abstract

Electroluminescent semiconductor device with heterogenous structure comprising a first epitaxial layer on a substrate, the layer being of first conductivity type and a second layer of opposite conductivity type partially compensated, also incorporates a third layer of partly compensated first conductivity type material having a wider forbidden energy band that the first material, and a localised diffused region crossing the third layer and strongly doped with an impurity giving it the opposite type of conductivity, and ohmic contacts on the diffused region an the first layer. Pref. the thickness of the second layer is less than diffusion path length of the minority carriers in this second layer. This method of doping produces electroluminescent junctions of high efficiency between epitaxial materials, the regions being active over a large part of their thickness with a large number of radiative combinations. The process combines the advantages of using an amphoteric depant with the advantages of heterogenous structure without the obligate surface preparation necessary in prior art. Very small devices of highly localised luminosity can be produced.
FR7442663A 1974-12-24 1974-12-24 Electroluminescent heterostructure semiconductor device - comprising three layers on a transparent substrate, of partly compensated matls. Granted FR2296271A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7442663A FR2296271A1 (en) 1974-12-24 1974-12-24 Electroluminescent heterostructure semiconductor device - comprising three layers on a transparent substrate, of partly compensated matls.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7442663A FR2296271A1 (en) 1974-12-24 1974-12-24 Electroluminescent heterostructure semiconductor device - comprising three layers on a transparent substrate, of partly compensated matls.

Publications (2)

Publication Number Publication Date
FR2296271A1 true FR2296271A1 (en) 1976-07-23
FR2296271B1 FR2296271B1 (en) 1978-06-23

Family

ID=9146569

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7442663A Granted FR2296271A1 (en) 1974-12-24 1974-12-24 Electroluminescent heterostructure semiconductor device - comprising three layers on a transparent substrate, of partly compensated matls.

Country Status (1)

Country Link
FR (1) FR2296271A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2531814A1 (en) * 1982-08-10 1984-02-17 Thomson Csf MONOLITHIC ASSOCIATION OF ELECTROLUMINESCENT DIODES AND LENSES
EP0115204A2 (en) * 1982-12-27 1984-08-08 Mitsubishi Kasei Polytec Company Epitaxial wafer for use in the production of an infrared LED
EP0151718A2 (en) * 1983-12-08 1985-08-21 Asea Ab Semiconductor element for producing an optical radiation
DE4205526A1 (en) * 1992-02-24 1993-08-26 Telefunken Microelectron Semiconductor device for infrared diode transmitter - comprises cpd. semiconductor material, N-doped semiconductor layer on substrate, and p-doped semiconductor layers, for small elements

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2147322A1 (en) * 1971-07-29 1973-03-09 Licentia Gmbh

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2147322A1 (en) * 1971-07-29 1973-03-09 Licentia Gmbh

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE US "I.B.M. TECHNICAL DISCLOSURE BULLETIN", VOLUME 16. NO. 4, SEPTEMBRE 1973. "SIMPLE PLANAR DOUBLE-HETEROJUNCTION LASER STRUCTURE", W.P. DUMKE, PAGE 1186) *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2531814A1 (en) * 1982-08-10 1984-02-17 Thomson Csf MONOLITHIC ASSOCIATION OF ELECTROLUMINESCENT DIODES AND LENSES
EP0101368A2 (en) * 1982-08-10 1984-02-22 Thomson-Csf Monolithic joining of a light emitting diode with lenses
EP0101368A3 (en) * 1982-08-10 1984-03-21 Thomson-Csf Monolithic joining of a light emitting diode with lenses
EP0115204A2 (en) * 1982-12-27 1984-08-08 Mitsubishi Kasei Polytec Company Epitaxial wafer for use in the production of an infrared LED
EP0115204A3 (en) * 1982-12-27 1986-06-25 Mitsubishi Monsanto Chemical Co. Ltd. Epitaxial wafer for use in the production of an infrared led
EP0151718A2 (en) * 1983-12-08 1985-08-21 Asea Ab Semiconductor element for producing an optical radiation
EP0151718A3 (en) * 1983-12-08 1987-12-23 Asea Ab Semiconductor element for producing an optical radiation
DE4205526A1 (en) * 1992-02-24 1993-08-26 Telefunken Microelectron Semiconductor device for infrared diode transmitter - comprises cpd. semiconductor material, N-doped semiconductor layer on substrate, and p-doped semiconductor layers, for small elements

Also Published As

Publication number Publication date
FR2296271B1 (en) 1978-06-23

Similar Documents

Publication Publication Date Title
DE59712106D1 (en) SILICON GERMANIUM hetero
US3345221A (en) Method of making a semiconductor device having improved pn junction avalanche characteristics
JPH03165577A (en) Semiconductor device and its manufacture
JPS6410644A (en) Manufacture of semiconductor device
GB988902A (en) Semiconductor devices and methods of making same
US3041213A (en) Diffused junction semiconductor device and method of making
GB1078798A (en) Improvements in or relating to field effect transistor devices
FR2296271A1 (en) Electroluminescent heterostructure semiconductor device - comprising three layers on a transparent substrate, of partly compensated matls.
US3615936A (en) Semiconductor device and method of making the same
KR970054357A (en) Semiconductor device and manufacturing method
GB1020097A (en) Semiconductor switching device and method of manufacture
US2907969A (en) Photoelectric device
JPS55165669A (en) Bipolar-mos device
GB1108774A (en) Transistors
GB995700A (en) Double epitaxial layer semiconductor structures
JPS5587429A (en) Manufacture of semiconductor device
US3443174A (en) L-h junction lateral transistor
JP2624518B2 (en) Method for manufacturing semiconductor device
GB1273199A (en) A method for manufacturing a semiconductor device having diffusion junctions
JPS54120588A (en) Gate turn-off thyristor
GB1353840A (en) High voltage schottky barrier device and method of manufacture
GB1028485A (en) Semiconductor devices
JPS6482589A (en) Manufacture of semiconductor laser device
HOGAN Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials[Patent Application]
JPS54146980A (en) Production of semiconductor device

Legal Events

Date Code Title Description
ST Notification of lapse