FR2296271B1 - - Google Patents

Info

Publication number
FR2296271B1
FR2296271B1 FR7442663A FR7442663A FR2296271B1 FR 2296271 B1 FR2296271 B1 FR 2296271B1 FR 7442663 A FR7442663 A FR 7442663A FR 7442663 A FR7442663 A FR 7442663A FR 2296271 B1 FR2296271 B1 FR 2296271B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7442663A
Other languages
French (fr)
Other versions
FR2296271A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7442663A priority Critical patent/FR2296271A1/en
Publication of FR2296271A1 publication Critical patent/FR2296271A1/en
Application granted granted Critical
Publication of FR2296271B1 publication Critical patent/FR2296271B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
FR7442663A 1974-12-24 1974-12-24 Electroluminescent heterostructure semiconductor device - comprising three layers on a transparent substrate, of partly compensated matls. Granted FR2296271A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7442663A FR2296271A1 (en) 1974-12-24 1974-12-24 Electroluminescent heterostructure semiconductor device - comprising three layers on a transparent substrate, of partly compensated matls.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7442663A FR2296271A1 (en) 1974-12-24 1974-12-24 Electroluminescent heterostructure semiconductor device - comprising three layers on a transparent substrate, of partly compensated matls.

Publications (2)

Publication Number Publication Date
FR2296271A1 FR2296271A1 (en) 1976-07-23
FR2296271B1 true FR2296271B1 (en) 1978-06-23

Family

ID=9146569

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7442663A Granted FR2296271A1 (en) 1974-12-24 1974-12-24 Electroluminescent heterostructure semiconductor device - comprising three layers on a transparent substrate, of partly compensated matls.

Country Status (1)

Country Link
FR (1) FR2296271A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2531814B1 (en) * 1982-08-10 1986-04-11 Thomson Csf MONOLITHIC COMBINATION OF LIGHT EMITTING DIODES AND LENSES
DE3379525D1 (en) * 1982-12-27 1989-05-03 Mitsubishi Monsanto Chem Epitaxial wafer for use in the production of an infrared led
SE453622B (en) * 1983-12-08 1988-02-15 Asea Ab SEMICONDUCTOR COMPONENT FOR GENERATING OPTICAL RADIATION
DE4205526A1 (en) * 1992-02-24 1993-08-26 Telefunken Microelectron Semiconductor device for infrared diode transmitter - comprises cpd. semiconductor material, N-doped semiconductor layer on substrate, and p-doped semiconductor layers, for small elements

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT963303B (en) * 1971-07-29 1974-01-10 Licentia Gmbh SEMICONDUCTOR LASER

Also Published As

Publication number Publication date
FR2296271A1 (en) 1976-07-23

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Legal Events

Date Code Title Description
ST Notification of lapse