FR2296269A1 - Dispositif semi-conducteur perfectionne - Google Patents

Dispositif semi-conducteur perfectionne

Info

Publication number
FR2296269A1
FR2296269A1 FR7539997A FR7539997A FR2296269A1 FR 2296269 A1 FR2296269 A1 FR 2296269A1 FR 7539997 A FR7539997 A FR 7539997A FR 7539997 A FR7539997 A FR 7539997A FR 2296269 A1 FR2296269 A1 FR 2296269A1
Authority
FR
France
Prior art keywords
perfected
semiconductor device
semiconductor
perfected semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7539997A
Other languages
English (en)
French (fr)
Other versions
FR2296269B1 (ru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of FR2296269A1 publication Critical patent/FR2296269A1/fr
Application granted granted Critical
Publication of FR2296269B1 publication Critical patent/FR2296269B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7539997A 1974-12-27 1975-12-29 Dispositif semi-conducteur perfectionne Granted FR2296269A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49148565A JPS5182578A (ru) 1974-12-27 1974-12-27

Publications (2)

Publication Number Publication Date
FR2296269A1 true FR2296269A1 (fr) 1976-07-23
FR2296269B1 FR2296269B1 (ru) 1979-10-05

Family

ID=15455579

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7539997A Granted FR2296269A1 (fr) 1974-12-27 1975-12-29 Dispositif semi-conducteur perfectionne

Country Status (5)

Country Link
JP (1) JPS5182578A (ru)
DE (2) DE2558975C2 (ru)
FR (1) FR2296269A1 (ru)
GB (1) GB1528028A (ru)
NL (1) NL182763C (ru)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368087A (en) * 1976-11-29 1978-06-17 Fujitsu Ltd Semiconductor device
DE3338131A1 (de) * 1983-10-20 1985-05-15 Telefunken electronic GmbH, 7100 Heilbronn I(pfeil hoch)2(pfeil hoch)l-schaltung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1507299A (en) * 1974-03-26 1978-04-12 Signetics Corp Integrated semiconductor devices
JPS5513583B2 (ru) * 1974-11-14 1980-04-10

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
DE2558975C2 (de) 1985-11-07
DE2560577C2 (de) 1986-04-17
NL7515036A (nl) 1976-06-29
JPS5182578A (ru) 1976-07-20
NL182763C (nl) 1988-05-02
GB1528028A (en) 1978-10-11
DE2558975A1 (de) 1976-07-08
NL182763B (nl) 1987-12-01
FR2296269B1 (ru) 1979-10-05

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Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse