FR2295566A1 - Procede de dopage d'un semi-conducteur au moyen d'une vitro-ceramique d'aluminoborosilicate de baryum - Google Patents

Procede de dopage d'un semi-conducteur au moyen d'une vitro-ceramique d'aluminoborosilicate de baryum

Info

Publication number
FR2295566A1
FR2295566A1 FR7537950A FR7537950A FR2295566A1 FR 2295566 A1 FR2295566 A1 FR 2295566A1 FR 7537950 A FR7537950 A FR 7537950A FR 7537950 A FR7537950 A FR 7537950A FR 2295566 A1 FR2295566 A1 FR 2295566A1
Authority
FR
France
Prior art keywords
doping
vitro
ceramic
semiconductor
barium aluminoborosilicate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7537950A
Other languages
English (en)
French (fr)
Other versions
FR2295566B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OI Glass Inc
Original Assignee
Owens Illinois Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/534,860 external-priority patent/US3962000A/en
Application filed by Owens Illinois Inc filed Critical Owens Illinois Inc
Publication of FR2295566A1 publication Critical patent/FR2295566A1/fr
Application granted granted Critical
Publication of FR2295566B1 publication Critical patent/FR2295566B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P32/12
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0036Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0036Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
    • C03C10/0045Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents containing SiO2, Al2O3 and MgO as main constituents
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0054Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing PbO, SnO2, B2O3
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/062Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064Glass compositions containing silica with less than 40% silica by weight containing boron
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/076Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165Diffusion sources
    • H10P32/171

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Metallurgy (AREA)
  • Glass Compositions (AREA)
FR7537950A 1974-12-20 1975-12-11 Procede de dopage d'un semi-conducteur au moyen d'une vitro-ceramique d'aluminoborosilicate de baryum Granted FR2295566A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/534,860 US3962000A (en) 1974-01-07 1974-12-20 Barium aluminoborosilicate glass-ceramics for semiconductor doping

Publications (2)

Publication Number Publication Date
FR2295566A1 true FR2295566A1 (fr) 1976-07-16
FR2295566B1 FR2295566B1 (OSRAM) 1979-07-06

Family

ID=24131820

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7537950A Granted FR2295566A1 (fr) 1974-12-20 1975-12-11 Procede de dopage d'un semi-conducteur au moyen d'une vitro-ceramique d'aluminoborosilicate de baryum

Country Status (4)

Country Link
CA (1) CA1061100A (OSRAM)
DE (5) DE2559840C2 (OSRAM)
FR (1) FR2295566A1 (OSRAM)
GB (1) GB1497193A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013208799A1 (de) * 2013-05-14 2014-11-20 Heraeus Quarzglas Gmbh & Co. Kg SiO2-basierte Sperrschicht für Hochtemperatur-Diffusions- und Beschichtungsprozesse

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL125167C (OSRAM) * 1963-01-17
DE1596848B1 (de) * 1966-12-31 1970-10-08 Jenaer Glaswerk Schott & Gen Durch Waermebehandlung aus einem Glas hergestellte alkalioxidfreie,thermisch hoch belastbare Glaskeramik mit geringen dielektrischen Verlusten
GB1143907A (en) * 1967-07-10 1969-02-26 Marconi Co Ltd Improvements in or relating to methods of manufacturing semiconductor devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
DE2559840C2 (de) 1983-09-22
DE2560268C2 (de) 1985-03-07
DE2559841C2 (de) 1983-10-20
GB1497193A (en) 1978-01-05
DE2545628A1 (de) 1976-07-01
DE2560267C2 (de) 1985-05-23
CA1061100A (en) 1979-08-28
FR2295566B1 (OSRAM) 1979-07-06

Similar Documents

Publication Publication Date Title
IT1010871B (it) Metodo di fabbricazione di un dispositivo semiconduttore
BE784491A (fr) Pompe commandee par une detente
FR2309981A1 (fr) Dispositif semi-conducteur comportant une heterojonction
BE811696A (fr) Positionnement precis d'un objet
BE828188A (fr) Procede de fabrication d'un dispositif semi-conducteur
BE821565A (fr) Procede de fabrication d'un dispositif a semi-conducteur
BE831381A (fr) Procede de dopage d'une couche de semi-conducteur
FR2294001A1 (fr) Procede d'estampage
BG24943A3 (bg) Метод за получаване на ненаситени нитрили
BE809922A (fr) Circuit dynamique a transistors mosfet
BE824887A (fr) Transistor bipolaire
BE774372A (fr) Composition photographique, son procede de preparation et son application a un procede de photothermographie
SE399152B (sv) Sett att framstella en halvledaranordning medelst termogradientstyrd zonsmeltning
BE810943A (fr) Procede de diffusion d'impuretes dans un semi-conducteur
IT1025482B (it) Metodo per formare a freddo re frattari legati con pece
FR2286482A1 (fr) Procede d'encapsulation
BE812398A (fr) Dispositif de raccordement a haute tension
ATA698774A (de) Laterale transistorstruktur
FR2295566A1 (fr) Procede de dopage d'un semi-conducteur au moyen d'une vitro-ceramique d'aluminoborosilicate de baryum
BE772254A (fr) Procede de fabrication d'un dispositif semi-conducteur
BE811857A (fr) Preparateur niveleur pour travaux agricoles
IT1028009B (it) Metodo di accrescimento di un composto semiconduttore
FR2287106A1 (fr) Procede de realisation d'un support de semiconducteur
BE826722A (fr) Procede de fabrication d'un dispositif semiconducteur
BE832229A (fr) Acides 19, 20-bis-nor-prostanoiques hypolipemiants

Legal Events

Date Code Title Description
ST Notification of lapse