FR2290760B1 - - Google Patents
Info
- Publication number
- FR2290760B1 FR2290760B1 FR7529324A FR7529324A FR2290760B1 FR 2290760 B1 FR2290760 B1 FR 2290760B1 FR 7529324 A FR7529324 A FR 7529324A FR 7529324 A FR7529324 A FR 7529324A FR 2290760 B1 FR2290760 B1 FR 2290760B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/521,423 US3943542A (en) | 1974-11-06 | 1974-11-06 | High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2290760A1 FR2290760A1 (fr) | 1976-06-04 |
FR2290760B1 true FR2290760B1 (fr) | 1978-04-07 |
Family
ID=24076672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7529324A Granted FR2290760A1 (fr) | 1974-11-06 | 1975-09-19 | Transistor a effet de champ a porte en silicium, auto-aligne et son procede de fabrication |
Country Status (5)
Country | Link |
---|---|
US (1) | US3943542A (fr) |
JP (1) | JPS5169372A (fr) |
DE (1) | DE2546314A1 (fr) |
FR (1) | FR2290760A1 (fr) |
GB (1) | GB1501249A (fr) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5928992B2 (ja) * | 1975-02-14 | 1984-07-17 | 日本電信電話株式会社 | Mosトランジスタおよびその製造方法 |
US4017888A (en) * | 1975-12-31 | 1977-04-12 | International Business Machines Corporation | Non-volatile metal nitride oxide semiconductor device |
JPS5293278A (en) * | 1976-01-30 | 1977-08-05 | Matsushita Electronics Corp | Manufacture for mos type semiconductor intergrated circuit |
JPS5324281A (en) * | 1976-08-19 | 1978-03-06 | Sony Corp | Production of insulated gate type field effect transistors |
JPS54128293A (en) * | 1978-03-29 | 1979-10-04 | Hitachi Ltd | Manufacture of semiconductor device especially for insulator gate type semiconductor device |
US4277881A (en) * | 1978-05-26 | 1981-07-14 | Rockwell International Corporation | Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
US4441941A (en) * | 1980-03-06 | 1984-04-10 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device employing element isolation using insulating materials |
US4287661A (en) * | 1980-03-26 | 1981-09-08 | International Business Machines Corporation | Method for making an improved polysilicon conductor structure utilizing reactive-ion etching and thermal oxidation |
JPS5779643A (en) * | 1980-11-06 | 1982-05-18 | Toshiba Corp | Semiconductor device |
DE3168688D1 (en) * | 1980-11-06 | 1985-03-14 | Toshiba Kk | Method for manufacturing a semiconductor device |
US4415383A (en) * | 1982-05-10 | 1983-11-15 | Northern Telecom Limited | Method of fabricating semiconductor devices using laser annealing |
JPS58209140A (ja) * | 1982-05-31 | 1983-12-06 | Nec Corp | 半導体装置の製造法 |
US4751554A (en) * | 1985-09-27 | 1988-06-14 | Rca Corporation | Silicon-on-sapphire integrated circuit and method of making the same |
US4758529A (en) * | 1985-10-31 | 1988-07-19 | Rca Corporation | Method of forming an improved gate dielectric for a MOSFET on an insulating substrate |
JPS61190975A (ja) * | 1986-02-21 | 1986-08-25 | Sony Corp | 絶縁ゲート型電界効果トランジスタの製法 |
US4722912A (en) * | 1986-04-28 | 1988-02-02 | Rca Corporation | Method of forming a semiconductor structure |
US4735917A (en) * | 1986-04-28 | 1988-04-05 | General Electric Company | Silicon-on-sapphire integrated circuits |
US4755481A (en) * | 1986-05-15 | 1988-07-05 | General Electric Company | Method of making a silicon-on-insulator transistor |
US6780718B2 (en) | 1993-11-30 | 2004-08-24 | Stmicroelectronics, Inc. | Transistor structure and method for making same |
US5406515A (en) * | 1993-12-01 | 1995-04-11 | International Business Machines Corporation | Method for fabricating low leakage substrate plate trench DRAM cells and devices formed thereby |
US6355580B1 (en) | 1998-09-03 | 2002-03-12 | Micron Technology, Inc. | Ion-assisted oxidation methods and the resulting structures |
US6200843B1 (en) | 1998-09-24 | 2001-03-13 | International Business Machines Corporation | High-voltage, high performance FETs |
US5981368A (en) * | 1998-11-05 | 1999-11-09 | Advanced Micro Devices | Enhanced shallow junction design by polysilicon line width reduction using oxidation with integrated spacer formation |
JP4734393B2 (ja) * | 2008-10-03 | 2011-07-27 | 間機設工業株式会社 | 汚泥等回収装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS497870B1 (fr) * | 1969-06-06 | 1974-02-22 | ||
US3633078A (en) * | 1969-10-24 | 1972-01-04 | Hughes Aircraft Co | Stable n-channel tetrode |
FR2103427A1 (fr) * | 1970-08-21 | 1972-04-14 | Motorola Inc | |
US3761327A (en) * | 1971-03-19 | 1973-09-25 | Itt | Planar silicon gate mos process |
US3751722A (en) * | 1971-04-30 | 1973-08-07 | Standard Microsyst Smc | Mos integrated circuit with substrate containing selectively formed resistivity regions |
NL160988C (nl) * | 1971-06-08 | 1979-12-17 | Philips Nv | Halfgeleiderinrichting met een halfgeleiderlichaam, be- vattende ten minste een eerste veldeffecttransistor met geisoleerde stuurelektrode en werkwijze voor de vervaar- diging van de halfgeleiderinrichting. |
JPS53674B2 (fr) * | 1971-12-23 | 1978-01-11 | ||
DE2314260A1 (de) * | 1972-05-30 | 1973-12-13 | Ibm | Ladungsgekoppelte halbleiteranordnung und verfahren zu ihrer herstellung |
US3883372A (en) * | 1973-07-11 | 1975-05-13 | Westinghouse Electric Corp | Method of making a planar graded channel MOS transistor |
-
1974
- 1974-11-06 US US05/521,423 patent/US3943542A/en not_active Expired - Lifetime
-
1975
- 1975-09-19 FR FR7529324A patent/FR2290760A1/fr active Granted
- 1975-10-16 DE DE19752546314 patent/DE2546314A1/de not_active Withdrawn
- 1975-10-17 GB GB42595/75A patent/GB1501249A/en not_active Expired
- 1975-11-05 JP JP50132208A patent/JPS5169372A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5169372A (fr) | 1976-06-15 |
DE2546314A1 (de) | 1976-05-13 |
FR2290760A1 (fr) | 1976-06-04 |
GB1501249A (en) | 1978-02-15 |
US3943542A (en) | 1976-03-09 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |