FR2284983B1 - - Google Patents

Info

Publication number
FR2284983B1
FR2284983B1 FR7431138A FR7431138A FR2284983B1 FR 2284983 B1 FR2284983 B1 FR 2284983B1 FR 7431138 A FR7431138 A FR 7431138A FR 7431138 A FR7431138 A FR 7431138A FR 2284983 B1 FR2284983 B1 FR 2284983B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7431138A
Other languages
French (fr)
Other versions
FR2284983A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR7431138A priority Critical patent/FR2284983A1/fr
Priority to CH1113975A priority patent/CH590556A5/xx
Priority to NL7510485A priority patent/NL7510485A/xx
Priority to JP50110843A priority patent/JPS5160174A/ja
Priority to DE19752541118 priority patent/DE2541118A1/de
Publication of FR2284983A1 publication Critical patent/FR2284983A1/fr
Application granted granted Critical
Publication of FR2284983B1 publication Critical patent/FR2284983B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
FR7431138A 1974-09-13 1974-09-13 Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede Granted FR2284983A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7431138A FR2284983A1 (fr) 1974-09-13 1974-09-13 Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede
CH1113975A CH590556A5 (en:Method) 1974-09-13 1975-08-28
NL7510485A NL7510485A (nl) 1974-09-13 1975-09-05 Werkwijze voor het vervaardigen van een tran- sistor, en zodoende verkregen transistor.
JP50110843A JPS5160174A (en) 1974-09-13 1975-09-12 Zetsuentaijono mos gatatoranjisutano tokuseiokairyosuruhoho oyobi konohohonyotsuteerarerutoranjisuta
DE19752541118 DE2541118A1 (de) 1974-09-13 1975-09-15 Verfahren zur herstellung von mos-transistoren mit verbesserten eigenschaften

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7431138A FR2284983A1 (fr) 1974-09-13 1974-09-13 Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede

Publications (2)

Publication Number Publication Date
FR2284983A1 FR2284983A1 (fr) 1976-04-09
FR2284983B1 true FR2284983B1 (en:Method) 1978-06-09

Family

ID=9143080

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7431138A Granted FR2284983A1 (fr) 1974-09-13 1974-09-13 Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede

Country Status (5)

Country Link
JP (1) JPS5160174A (en:Method)
CH (1) CH590556A5 (en:Method)
DE (1) DE2541118A1 (en:Method)
FR (1) FR2284983A1 (en:Method)
NL (1) NL7510485A (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4279069A (en) 1979-02-21 1981-07-21 Rockwell International Corporation Fabrication of a nonvolatile memory array device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2834724A1 (de) * 1978-08-08 1980-02-14 Siemens Ag Mos-feldeffekttransistoren fuer hoehere spannungen
JPS58151062A (ja) * 1982-01-28 1983-09-08 Toshiba Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4279069A (en) 1979-02-21 1981-07-21 Rockwell International Corporation Fabrication of a nonvolatile memory array device

Also Published As

Publication number Publication date
DE2541118A1 (de) 1976-03-25
CH590556A5 (en:Method) 1977-08-15
FR2284983A1 (fr) 1976-04-09
NL7510485A (nl) 1976-03-16
JPS5160174A (en) 1976-05-25

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Legal Events

Date Code Title Description
ST Notification of lapse