CH590556A5 - - Google Patents
Info
- Publication number
- CH590556A5 CH590556A5 CH1113975A CH1113975A CH590556A5 CH 590556 A5 CH590556 A5 CH 590556A5 CH 1113975 A CH1113975 A CH 1113975A CH 1113975 A CH1113975 A CH 1113975A CH 590556 A5 CH590556 A5 CH 590556A5
- Authority
- CH
- Switzerland
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
- H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7431138A FR2284983A1 (fr) | 1974-09-13 | 1974-09-13 | Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH590556A5 true CH590556A5 (en:Method) | 1977-08-15 |
Family
ID=9143080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1113975A CH590556A5 (en:Method) | 1974-09-13 | 1975-08-28 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5160174A (en:Method) |
| CH (1) | CH590556A5 (en:Method) |
| DE (1) | DE2541118A1 (en:Method) |
| FR (1) | FR2284983A1 (en:Method) |
| NL (1) | NL7510485A (en:Method) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2834724A1 (de) * | 1978-08-08 | 1980-02-14 | Siemens Ag | Mos-feldeffekttransistoren fuer hoehere spannungen |
| US4279069A (en) | 1979-02-21 | 1981-07-21 | Rockwell International Corporation | Fabrication of a nonvolatile memory array device |
| JPS58151062A (ja) * | 1982-01-28 | 1983-09-08 | Toshiba Corp | 半導体装置 |
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1974
- 1974-09-13 FR FR7431138A patent/FR2284983A1/fr active Granted
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1975
- 1975-08-28 CH CH1113975A patent/CH590556A5/xx not_active IP Right Cessation
- 1975-09-05 NL NL7510485A patent/NL7510485A/xx not_active Application Discontinuation
- 1975-09-12 JP JP50110843A patent/JPS5160174A/ja active Pending
- 1975-09-15 DE DE19752541118 patent/DE2541118A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| NL7510485A (nl) | 1976-03-16 |
| FR2284983A1 (fr) | 1976-04-09 |
| DE2541118A1 (de) | 1976-03-25 |
| FR2284983B1 (en:Method) | 1978-06-09 |
| JPS5160174A (en) | 1976-05-25 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased | ||
| PL | Patent ceased |