FR2284907A1 - Procede perfectionne pour le developpement de pellicules sensibles aux faisceaux d'electrons - Google Patents

Procede perfectionne pour le developpement de pellicules sensibles aux faisceaux d'electrons

Info

Publication number
FR2284907A1
FR2284907A1 FR7527847A FR7527847A FR2284907A1 FR 2284907 A1 FR2284907 A1 FR 2284907A1 FR 7527847 A FR7527847 A FR 7527847A FR 7527847 A FR7527847 A FR 7527847A FR 2284907 A1 FR2284907 A1 FR 2284907A1
Authority
FR
France
Prior art keywords
development
electron beams
perfected process
films sensitive
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7527847A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2284907A1 publication Critical patent/FR2284907A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
FR7527847A 1974-09-16 1975-09-11 Procede perfectionne pour le developpement de pellicules sensibles aux faisceaux d'electrons Withdrawn FR2284907A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/506,444 US3961101A (en) 1974-09-16 1974-09-16 Process for improved development of electron-beam-sensitive resist films

Publications (1)

Publication Number Publication Date
FR2284907A1 true FR2284907A1 (fr) 1976-04-09

Family

ID=24014616

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7527847A Withdrawn FR2284907A1 (fr) 1974-09-16 1975-09-11 Procede perfectionne pour le developpement de pellicules sensibles aux faisceaux d'electrons

Country Status (7)

Country Link
US (1) US3961101A (fr)
JP (1) JPS5159634A (fr)
CA (1) CA1035472A (fr)
DE (1) DE2539691A1 (fr)
FR (1) FR2284907A1 (fr)
GB (1) GB1513388A (fr)
NL (1) NL7510828A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0206308A1 (fr) * 1985-06-27 1986-12-30 Fuji Photo Film Co., Ltd. Procédé de développement d'un matériau photosensible
EP0419073A2 (fr) * 1989-09-20 1991-03-27 Fujitsu Limited Procédé pour la production d'un système semi-conducteur
EP0698825A1 (fr) * 1994-07-29 1996-02-28 AT&T Corp. Résiste sensible à l'énergie et procédé pour fabriquer un objet en utilisant ce résiste
US5783367A (en) * 1989-09-20 1998-07-21 Fujitsu Limited Process for production of semiconductor device and resist developing apparatus used therein

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1120763A (fr) * 1977-11-23 1982-03-30 James A. Carothers Amelioration du developpement a resist
US4359520A (en) * 1977-11-23 1982-11-16 International Business Machines Corporation Enhancement of resist development
US4415653A (en) * 1981-05-07 1983-11-15 Honeywell Inc. Method of making sensitive positive electron beam resists
US4409319A (en) * 1981-07-15 1983-10-11 International Business Machines Corporation Electron beam exposed positive resist mask process
GB2166254A (en) * 1984-10-08 1986-04-30 British Telecomm Method for the production of a metal patterning mask
US4613561A (en) * 1984-10-17 1986-09-23 James Marvin Lewis Method of high contrast positive O-quinone diazide photoresist developing using pretreatment solution
JPH0721640B2 (ja) * 1984-11-19 1995-03-08 富士通株式会社 レジスト現像方法
JPS61156125A (ja) * 1984-12-28 1986-07-15 Fujitsu Ltd 光ディスク用原盤のプリグルーブパターン形成方法
US4710449A (en) * 1986-01-29 1987-12-01 Petrarch Systems, Inc. High contrast low metal ion positive photoresist developing method using aqueous base solutions with surfactants
JPH08235645A (ja) * 1995-02-28 1996-09-13 Pioneer Video Corp 光記録媒体用現像方法及び光記録媒体用現像装置
US7666579B1 (en) * 2001-09-17 2010-02-23 Serenity Technologies, Inc. Method and apparatus for high density storage of analog data in a durable medium
JP2006344310A (ja) * 2005-06-09 2006-12-21 Sony Corp 現像方法および現像装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL280959A (fr) * 1961-07-28
GB1115245A (en) * 1965-06-01 1968-05-29 Agfa Gevaert Nv Method for recording and reproducing information by surface deformation of a polymeric composition
GB1115813A (en) * 1965-06-01 1968-05-29 Agfa Gevaert Nv Method for recording and reproducing information by surface modification of a polymeric composition
US3482973A (en) * 1965-10-01 1969-12-09 Xerox Corp Imaging system
US3707373A (en) * 1969-03-17 1972-12-26 Eastman Kodak Co Lithographic plate developers
US3639185A (en) * 1969-06-30 1972-02-01 Ibm Novel etchant and process for etching thin metal films
US3647443A (en) * 1969-09-12 1972-03-07 Eastman Kodak Co Light-sensitive quinone diazide polymers and polymer compositions
US3674591A (en) * 1969-11-28 1972-07-04 Stromberg Datagraphix Inc Surface deformation imaging process
US3649393A (en) * 1970-06-12 1972-03-14 Ibm Variable depth etching of film layers using variable exposures of photoresists
US3759711A (en) * 1970-09-16 1973-09-18 Eastman Kodak Co Er compositions and elements nitrogen linked apperding quinone diazide light sensitive vinyl polym
US3770433A (en) * 1972-03-22 1973-11-06 Bell Telephone Labor Inc High sensitivity negative electron resist
US3859099A (en) * 1972-12-22 1975-01-07 Eastman Kodak Co Positive plate incorporating diazoquinone
US3852771A (en) * 1973-02-12 1974-12-03 Rca Corp Electron beam recording process

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0206308A1 (fr) * 1985-06-27 1986-12-30 Fuji Photo Film Co., Ltd. Procédé de développement d'un matériau photosensible
EP0419073A2 (fr) * 1989-09-20 1991-03-27 Fujitsu Limited Procédé pour la production d'un système semi-conducteur
EP0419073A3 (en) * 1989-09-20 1991-09-18 Fujitsu Limited Process for production of a semiconductor device
US5783367A (en) * 1989-09-20 1998-07-21 Fujitsu Limited Process for production of semiconductor device and resist developing apparatus used therein
US6033134A (en) * 1989-09-20 2000-03-07 Fujitsu Limited Resist developing apparatus used in process for production of semiconductor device
EP0698825A1 (fr) * 1994-07-29 1996-02-28 AT&T Corp. Résiste sensible à l'énergie et procédé pour fabriquer un objet en utilisant ce résiste

Also Published As

Publication number Publication date
DE2539691A1 (de) 1976-03-25
GB1513388A (en) 1978-06-07
NL7510828A (nl) 1976-03-18
US3961101A (en) 1976-06-01
CA1035472A (fr) 1978-07-25
JPS5159634A (en) 1976-05-24

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Legal Events

Date Code Title Description
ST Notification of lapse