FR2282167B1 - - Google Patents

Info

Publication number
FR2282167B1
FR2282167B1 FR7524516A FR7524516A FR2282167B1 FR 2282167 B1 FR2282167 B1 FR 2282167B1 FR 7524516 A FR7524516 A FR 7524516A FR 7524516 A FR7524516 A FR 7524516A FR 2282167 B1 FR2282167 B1 FR 2282167B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7524516A
Other languages
French (fr)
Other versions
FR2282167A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2282167A1 publication Critical patent/FR2282167A1/fr
Application granted granted Critical
Publication of FR2282167B1 publication Critical patent/FR2282167B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148Cathode regions of thyristors
FR7524516A 1974-08-13 1975-08-06 Thyristor a emetteur court-circuite Granted FR2282167A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2438894A DE2438894C3 (de) 1974-08-13 1974-08-13 Thyristor mit Kurzschlußemitter

Publications (2)

Publication Number Publication Date
FR2282167A1 FR2282167A1 (fr) 1976-03-12
FR2282167B1 true FR2282167B1 (ref) 1980-07-18

Family

ID=5923126

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7524516A Granted FR2282167A1 (fr) 1974-08-13 1975-08-06 Thyristor a emetteur court-circuite

Country Status (6)

Country Link
JP (1) JPS5530309B2 (ref)
CA (1) CA1038084A (ref)
DE (1) DE2438894C3 (ref)
FR (1) FR2282167A1 (ref)
GB (1) GB1479113A (ref)
SE (1) SE409260B (ref)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2945347A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb
DE3017584C2 (de) * 1980-05-08 1982-12-23 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Thyristor
DE3018499A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
DE3112942A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor und verfahren zu seinem betrieb
DE3917769A1 (de) * 1989-05-31 1990-12-06 Siemens Ag Thyristor mit emitter-nebenschluessen

Also Published As

Publication number Publication date
DE2438894B2 (de) 1978-06-22
DE2438894A1 (de) 1976-02-26
SE409260B (sv) 1979-08-06
DE2438894C3 (de) 1979-02-22
JPS5144482A (ref) 1976-04-16
SE7509089L (sv) 1976-02-16
JPS5530309B2 (ref) 1980-08-09
GB1479113A (en) 1977-07-06
CA1038084A (en) 1978-09-05
FR2282167A1 (fr) 1976-03-12

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Legal Events

Date Code Title Description
ST Notification of lapse