FR2274116A1 - Appareil a semi-conducteur de regeneration de charge par stockage et transfert de porteurs de charge - Google Patents

Appareil a semi-conducteur de regeneration de charge par stockage et transfert de porteurs de charge

Info

Publication number
FR2274116A1
FR2274116A1 FR7517433A FR7517433A FR2274116A1 FR 2274116 A1 FR2274116 A1 FR 2274116A1 FR 7517433 A FR7517433 A FR 7517433A FR 7517433 A FR7517433 A FR 7517433A FR 2274116 A1 FR2274116 A1 FR 2274116A1
Authority
FR
France
Prior art keywords
charge
transfer
storage
semiconductor device
regeneration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7517433A
Other languages
English (en)
French (fr)
Other versions
FR2274116B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2274116A1 publication Critical patent/FR2274116A1/fr
Application granted granted Critical
Publication of FR2274116B1 publication Critical patent/FR2274116B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/456—Structures for regeneration, refreshing or leakage compensation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
FR7517433A 1974-06-05 1975-06-04 Appareil a semi-conducteur de regeneration de charge par stockage et transfert de porteurs de charge Granted FR2274116A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/476,702 US3937985A (en) 1974-06-05 1974-06-05 Apparatus and method for regenerating charge

Publications (2)

Publication Number Publication Date
FR2274116A1 true FR2274116A1 (fr) 1976-01-02
FR2274116B1 FR2274116B1 (OSRAM) 1977-07-08

Family

ID=23892916

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7517433A Granted FR2274116A1 (fr) 1974-06-05 1975-06-04 Appareil a semi-conducteur de regeneration de charge par stockage et transfert de porteurs de charge

Country Status (6)

Country Link
US (1) US3937985A (OSRAM)
JP (1) JPS516483A (OSRAM)
DE (1) DE2525093A1 (OSRAM)
FR (1) FR2274116A1 (OSRAM)
IT (1) IT1036170B (OSRAM)
NL (1) NL7506450A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2316695A1 (fr) * 1975-06-30 1977-01-28 Honeywell Inf Systems Injecteurs de charge pour registre ccd

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2281629A1 (fr) * 1974-08-10 1976-03-05 Solartron Electronic Group Circuit memoire analogique
DE2541662A1 (de) * 1975-09-18 1977-03-24 Siemens Ag Regenerierschaltung fuer ladungsverschiebeanordnungen
US4124862A (en) * 1975-10-01 1978-11-07 General Electric Company Charge transfer filter
US4047051A (en) * 1975-10-24 1977-09-06 International Business Machines Corporation Method and apparatus for replicating a charge packet
JPS52147941A (en) * 1976-06-03 1977-12-08 Toshiba Corp Electric charge transfer type analog signal memory system
US4099197A (en) * 1976-08-12 1978-07-04 Northern Telecom Limited Complementary input structure for charge coupled device
US4170041A (en) * 1976-09-17 1979-10-02 Trw Inc. Logic gate utilizing charge transfer devices
US4099175A (en) * 1976-10-29 1978-07-04 International Business Machines Corporation Charge-coupled device digital-to-analog converter
CA1105139A (en) * 1976-12-08 1981-07-14 Ronald E. Crochiere Charge transfer device having linear differential charge-splitting input
DE2721039C2 (de) * 1977-05-10 1986-10-23 Siemens AG, 1000 Berlin und 8000 München Digitale Ladungsverschiebeanordnung
US4140923A (en) * 1977-11-25 1979-02-20 Rca Corporation Charge transfer output circuits
US4135104A (en) * 1977-12-02 1979-01-16 Trw, Inc. Regenerator circuit
DE2836473A1 (de) * 1978-08-21 1980-03-06 Siemens Ag Ccd-eingangsschaltung nach dem fill and spill-prinzip
DE2838037A1 (de) * 1978-08-31 1980-04-10 Siemens Ag Monolithisch integrierte ladungsverschiebeanordnung
US4482909A (en) * 1982-08-02 1984-11-13 Xerox Corporation Signal equalization in quadrilinear imaging CCD arrays

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
US3806772A (en) * 1972-02-07 1974-04-23 Fairchild Camera Instr Co Charge coupled amplifier
US3777186A (en) * 1972-07-03 1973-12-04 Ibm Charge transfer logic device
US3838438A (en) * 1973-03-02 1974-09-24 Bell Telephone Labor Inc Detection, inversion, and regeneration in charge transfer apparatus
US3831041A (en) * 1973-05-03 1974-08-20 Bell Telephone Labor Inc Compensating circuit for semiconductive apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2316695A1 (fr) * 1975-06-30 1977-01-28 Honeywell Inf Systems Injecteurs de charge pour registre ccd

Also Published As

Publication number Publication date
JPS516483A (OSRAM) 1976-01-20
FR2274116B1 (OSRAM) 1977-07-08
US3937985A (en) 1976-02-10
NL7506450A (nl) 1975-12-09
IT1036170B (it) 1979-10-30
DE2525093A1 (de) 1975-12-18

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Legal Events

Date Code Title Description
ST Notification of lapse