FR2266308A1 - Semiconductor diode with improved forward characteristics - has diffusion produced pn-junction with one side impurities connection - Google Patents

Semiconductor diode with improved forward characteristics - has diffusion produced pn-junction with one side impurities connection

Info

Publication number
FR2266308A1
FR2266308A1 FR7510018A FR7510018A FR2266308A1 FR 2266308 A1 FR2266308 A1 FR 2266308A1 FR 7510018 A FR7510018 A FR 7510018A FR 7510018 A FR7510018 A FR 7510018A FR 2266308 A1 FR2266308 A1 FR 2266308A1
Authority
FR
France
Prior art keywords
junction
impurities
zone
semiconductor diode
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7510018A
Other languages
English (en)
French (fr)
Other versions
FR2266308B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of FR2266308A1 publication Critical patent/FR2266308A1/fr
Application granted granted Critical
Publication of FR2266308B1 publication Critical patent/FR2266308B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7510018A 1974-03-29 1975-03-28 Semiconductor diode with improved forward characteristics - has diffusion produced pn-junction with one side impurities connection Granted FR2266308A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2415218A DE2415218A1 (de) 1974-03-29 1974-03-29 Halbleiterdiode

Publications (2)

Publication Number Publication Date
FR2266308A1 true FR2266308A1 (en) 1975-10-24
FR2266308B1 FR2266308B1 (enrdf_load_stackoverflow) 1978-12-15

Family

ID=5911557

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7510018A Granted FR2266308A1 (en) 1974-03-29 1975-03-28 Semiconductor diode with improved forward characteristics - has diffusion produced pn-junction with one side impurities connection

Country Status (3)

Country Link
JP (1) JPS50131773A (enrdf_load_stackoverflow)
DE (1) DE2415218A1 (enrdf_load_stackoverflow)
FR (1) FR2266308A1 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3633161A1 (de) * 1986-09-30 1988-04-07 Licentia Gmbh Halbleiterbauelement mit einer anodenseitigen p-zone und einer anliegenden schwach dotierten n-basiszone
DE10031461B4 (de) * 2000-06-28 2006-06-29 Infineon Technologies Ag Hochvolt-Diode

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA960717A (en) * 1971-09-13 1975-01-07 Richard C. Wilson Hollow metal bat with non-uniform weight distribution
CA984007A (en) * 1971-09-21 1976-02-17 Antal Csicsatka Four channel stereophonic system

Also Published As

Publication number Publication date
DE2415218A1 (de) 1975-10-02
FR2266308B1 (enrdf_load_stackoverflow) 1978-12-15
JPS50131773A (enrdf_load_stackoverflow) 1975-10-18

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Legal Events

Date Code Title Description
ST Notification of lapse