FR2264893A1 - Nickel phosphide film resistor with titanium dioxide layer - formed on sintered alumina substrate reducing scatter of surface resistivity - Google Patents

Nickel phosphide film resistor with titanium dioxide layer - formed on sintered alumina substrate reducing scatter of surface resistivity

Info

Publication number
FR2264893A1
FR2264893A1 FR7508211A FR7508211A FR2264893A1 FR 2264893 A1 FR2264893 A1 FR 2264893A1 FR 7508211 A FR7508211 A FR 7508211A FR 7508211 A FR7508211 A FR 7508211A FR 2264893 A1 FR2264893 A1 FR 2264893A1
Authority
FR
France
Prior art keywords
titanium dioxide
dioxide layer
surface resistivity
film resistor
alumina substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7508211A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2264893A1 publication Critical patent/FR2264893A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/01—Mounting; Supporting
    • H01C1/014—Mounting; Supporting the resistor being suspended between and being supported by two supporting sections

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Adjustable Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

An electric resistor with a NiP resistance film has a substrate of sintered Al2O3 and an intermediate layer of polycrystalline TiO2, with a thickness =1 mu m. It is used in integrated circuits, esp. microwave circuits. The TiO2 layer gives a considerable redn. in the scatter in the resistance per square, e.g. for a resistance film with a value of 50ohm/sq., the scatter is 100% on a 2.5 x 2.5cm2 substrate with no TiO2 coating, cf. 50 plus-or-minus 1 0ohm/sq. The TiO2 can be applied easily by pyrolysis of a suitable Ti cpd. on the substrate.
FR7508211A 1974-03-18 1975-03-17 Nickel phosphide film resistor with titanium dioxide layer - formed on sintered alumina substrate reducing scatter of surface resistivity Withdrawn FR2264893A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7403565A NL7403565A (en) 1974-03-18 1974-03-18 RESISTANCE FLAVORS ON SINTERED ALUMINUM OXIDE

Publications (1)

Publication Number Publication Date
FR2264893A1 true FR2264893A1 (en) 1975-10-17

Family

ID=19820977

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7508211A Withdrawn FR2264893A1 (en) 1974-03-18 1975-03-17 Nickel phosphide film resistor with titanium dioxide layer - formed on sintered alumina substrate reducing scatter of surface resistivity

Country Status (4)

Country Link
JP (1) JPS50127200A (en)
DE (1) DE2509521A1 (en)
FR (1) FR2264893A1 (en)
NL (1) NL7403565A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61188901A (en) * 1985-02-16 1986-08-22 株式会社日本自動車部品総合研究所 Membrane type resistance for flow rate sensor

Also Published As

Publication number Publication date
JPS50127200A (en) 1975-10-06
DE2509521A1 (en) 1975-09-25
NL7403565A (en) 1975-09-22

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Legal Events

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ST Notification of lapse