FR2264589A1 - Epitaxial prodn. of silicon carbide semiconductor - by sublimation in regulated temp. field, minimising vapour loss - Google Patents
Epitaxial prodn. of silicon carbide semiconductor - by sublimation in regulated temp. field, minimising vapour lossInfo
- Publication number
- FR2264589A1 FR2264589A1 FR7409089A FR7409089A FR2264589A1 FR 2264589 A1 FR2264589 A1 FR 2264589A1 FR 7409089 A FR7409089 A FR 7409089A FR 7409089 A FR7409089 A FR 7409089A FR 2264589 A1 FR2264589 A1 FR 2264589A1
- Authority
- FR
- France
- Prior art keywords
- prodn
- sublimation
- temp
- sic
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7409089A FR2264589A1 (en) | 1974-03-18 | 1974-03-18 | Epitaxial prodn. of silicon carbide semiconductor - by sublimation in regulated temp. field, minimising vapour loss |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7409089A FR2264589A1 (en) | 1974-03-18 | 1974-03-18 | Epitaxial prodn. of silicon carbide semiconductor - by sublimation in regulated temp. field, minimising vapour loss |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2264589A1 true FR2264589A1 (en) | 1975-10-17 |
FR2264589B1 FR2264589B1 (it) | 1977-09-30 |
Family
ID=9136451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7409089A Granted FR2264589A1 (en) | 1974-03-18 | 1974-03-18 | Epitaxial prodn. of silicon carbide semiconductor - by sublimation in regulated temp. field, minimising vapour loss |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2264589A1 (it) |
-
1974
- 1974-03-18 FR FR7409089A patent/FR2264589A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2264589B1 (it) | 1977-09-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |