FR2263606A1 - - Google Patents

Info

Publication number
FR2263606A1
FR2263606A1 FR7506388A FR7506388A FR2263606A1 FR 2263606 A1 FR2263606 A1 FR 2263606A1 FR 7506388 A FR7506388 A FR 7506388A FR 7506388 A FR7506388 A FR 7506388A FR 2263606 A1 FR2263606 A1 FR 2263606A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7506388A
Other versions
FR2263606B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2263606A1 publication Critical patent/FR2263606A1/fr
Application granted granted Critical
Publication of FR2263606B1 publication Critical patent/FR2263606B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64Impedance arrangements
    • H01L2223/66High-frequency adaptations
    • H01L2223/6644Packaging aspects of high-frequency amplifiers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49109Connecting at different heights outside the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01039Yttrium [Y]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30105Capacitance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
FR7506388A 1974-03-06 1975-02-28 Expired FR2263606B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US448697A US3908185A (en) 1974-03-06 1974-03-06 High frequency semiconductor device having improved metallized patterns

Publications (2)

Publication Number Publication Date
FR2263606A1 true FR2263606A1 (fr) 1975-10-03
FR2263606B1 FR2263606B1 (fr) 1978-02-24

Family

ID=23781319

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7506388A Expired FR2263606B1 (fr) 1974-03-06 1975-02-28

Country Status (4)

Country Link
US (1) US3908185A (fr)
JP (1) JPS50122176A (fr)
FR (1) FR2263606B1 (fr)
GB (1) GB1499889A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2489592A1 (fr) * 1980-09-02 1982-03-05 Thomson Csf Micro-boitier ceramique d'encapsulation de circuit electronique
FR2529385A1 (fr) * 1982-06-29 1983-12-30 Thomson Csf Microboitier d'encapsulation de circuits integres logiques fonctionnant en tres haute frequence
EP0123692A1 (fr) * 1982-10-05 1984-11-07 Mayo Foundation Support de plaquette sans conducteur pour composants logiques
EP0272188A2 (fr) * 1986-12-19 1988-06-22 Fairchild Semiconductor Corporation Empaquetage en céramique pour dispositifs semi-conducteurs à haute fréquence
US4839717A (en) * 1986-12-19 1989-06-13 Fairchild Semiconductor Corporation Ceramic package for high frequency semiconductor devices

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110712A (en) * 1975-05-14 1978-08-29 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Microstrip circuit having coplanar waveguide port
US3999142A (en) * 1975-11-12 1976-12-21 The United States Of America As Represented By The Secretary Of The Army Variable tuning and feedback on high power microwave transistor carrier amplifier
US4042952A (en) * 1976-06-09 1977-08-16 Motorola, Inc. R. F. power transistor device with controlled common lead inductance
US4107728A (en) * 1977-01-07 1978-08-15 Varian Associates, Inc. Package for push-pull semiconductor devices
US4193083A (en) * 1977-01-07 1980-03-11 Varian Associates, Inc. Package for push-pull semiconductor devices
US4285002A (en) * 1978-01-19 1981-08-18 International Computers Limited Integrated circuit package
US4303934A (en) * 1979-08-30 1981-12-01 Burr-Brown Research Corp. Molded lead frame dual in line package including a hybrid circuit
US4376287A (en) * 1980-10-29 1983-03-08 Rca Corporation Microwave power circuit with an active device mounted on a heat dissipating substrate
US5144413A (en) * 1981-11-23 1992-09-01 Raytheon Company Semiconductor structures and manufacturing methods
JPS5893358A (ja) * 1981-11-30 1983-06-03 Mitsubishi Electric Corp 半導体装置
DE3147789A1 (de) * 1981-12-03 1983-06-09 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungsmodul und verfahren zu seiner herstellung
US4541005A (en) * 1982-04-05 1985-09-10 Motorola, Inc. Self-positioning heat spreader
US4608592A (en) * 1982-07-09 1986-08-26 Nec Corporation Semiconductor device provided with a package for a semiconductor element having a plurality of electrodes to be applied with substantially same voltage
JPS59180514A (ja) * 1983-03-31 1984-10-13 Toshiba Corp 光受信モジユ−ル
US4631572A (en) * 1983-09-27 1986-12-23 Trw Inc. Multiple path signal distribution to large scale integration chips
US4610032A (en) * 1985-01-16 1986-09-02 At&T Bell Laboratories Sis mixer having thin film wrap around edge contact
US4686492A (en) * 1985-03-04 1987-08-11 Tektronix, Inc. Impedance match connection using multiple layers of bond wires
US4701573A (en) * 1985-09-26 1987-10-20 Itt Gallium Arsenide Technology Center Semiconductor chip housing
US4720690A (en) * 1986-07-14 1988-01-19 Harris Corporation Sculptured stripline interface conductor
US4891687A (en) * 1987-01-12 1990-01-02 Intel Corporation Multi-layer molded plastic IC package
GB2199988B (en) * 1987-01-12 1990-04-25 Intel Corp Multi-layer molded plastic ic package
US4835120A (en) * 1987-01-12 1989-05-30 Debendra Mallik Method of making a multilayer molded plastic IC package
EP0308749A3 (fr) * 1987-09-25 1990-07-11 Siemens Aktiengesellschaft Groupe électro-optique
US5254871A (en) * 1988-11-08 1993-10-19 Bull, S.A. Very large scale integrated circuit package, integrated circuit carrier and resultant interconnection board
FR2647599B1 (fr) * 1989-05-24 1991-11-29 Alcatel Espace Structure de realisation de circuits et composants appliquee aux hyperfrequences
DE3931634A1 (de) * 1989-09-22 1991-04-04 Telefunken Electronic Gmbh Halbleiterbauelement
US5105260A (en) 1989-10-31 1992-04-14 Sgs-Thomson Microelectronics, Inc. Rf transistor package with nickel oxide barrier
JP2503282B2 (ja) * 1989-12-08 1996-06-05 富士通株式会社 受光素子キャリア及び該キャリアを有する受光モジュ―ル
US5109268A (en) * 1989-12-29 1992-04-28 Sgs-Thomson Microelectronics, Inc. Rf transistor package and mounting pad
US5235211A (en) * 1990-06-22 1993-08-10 Digital Equipment Corporation Semiconductor package having wraparound metallization
US5175522A (en) * 1991-05-09 1992-12-29 Hughes Aircraft Company Ground plane choke for strip transmission line
US5200640A (en) * 1991-08-12 1993-04-06 Electron Power Inc. Hermetic package having covers and a base providing for direct electrical connection
JP3794792B2 (ja) * 1997-07-22 2006-07-12 Tdk株式会社 回路基板
US6404065B1 (en) * 1998-07-31 2002-06-11 I-Xys Corporation Electrically isolated power semiconductor package
US6350954B1 (en) * 2000-01-24 2002-02-26 Motorola Inc. Electronic device package, and method
US6727585B2 (en) 2001-05-04 2004-04-27 Ixys Corporation Power device with a plastic molded package and direct bonded substrate
US6731002B2 (en) * 2001-05-04 2004-05-04 Ixys Corporation High frequency power device with a plastic molded package and direct bonded substrate
US8659359B2 (en) 2010-04-22 2014-02-25 Freescale Semiconductor, Inc. RF power transistor circuit
US9281283B2 (en) * 2012-09-12 2016-03-08 Freescale Semiconductor, Inc. Semiconductor devices with impedance matching-circuits
US10432152B2 (en) 2015-05-22 2019-10-01 Nxp Usa, Inc. RF amplifier output circuit device with integrated current path, and methods of manufacture thereof
US9692363B2 (en) 2015-10-21 2017-06-27 Nxp Usa, Inc. RF power transistors with video bandwidth circuits, and methods of manufacture thereof
US9571044B1 (en) 2015-10-21 2017-02-14 Nxp Usa, Inc. RF power transistors with impedance matching circuits, and methods of manufacture thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202925C (fr) * 1969-04-30 1900-01-01
US3626259A (en) * 1970-07-15 1971-12-07 Trw Inc High-frequency semiconductor package
US3681513A (en) * 1971-01-26 1972-08-01 American Lava Corp Hermetic power package
US3713006A (en) * 1971-02-08 1973-01-23 Trw Inc Hybrid transistor
US3715635A (en) * 1971-06-25 1973-02-06 Bendix Corp High frequency matched impedance microcircuit holder
DE2250918C2 (de) * 1971-10-27 1982-02-04 Westinghouse Electric Corp., 15222 Pittsburgh, Pa. Chipträger für Mikrowellen-Leistungstransistoren und Verfahren zu seiner Herstellung
US3748544A (en) * 1972-02-14 1973-07-24 Plessey Inc Laminated ceramic high-frequency semiconductor package

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2489592A1 (fr) * 1980-09-02 1982-03-05 Thomson Csf Micro-boitier ceramique d'encapsulation de circuit electronique
FR2529385A1 (fr) * 1982-06-29 1983-12-30 Thomson Csf Microboitier d'encapsulation de circuits integres logiques fonctionnant en tres haute frequence
EP0101335A1 (fr) * 1982-06-29 1984-02-22 Thomson-Csf Microboîtier d'encapsulation de circuits intégrés logiques fonctionnant en très haute fréquence
EP0123692A1 (fr) * 1982-10-05 1984-11-07 Mayo Foundation Support de plaquette sans conducteur pour composants logiques
EP0123692A4 (fr) * 1982-10-05 1985-07-30 Mayo Foundation Support de plaquette sans conducteur pour composants logiques.
EP0272188A2 (fr) * 1986-12-19 1988-06-22 Fairchild Semiconductor Corporation Empaquetage en céramique pour dispositifs semi-conducteurs à haute fréquence
EP0272188A3 (fr) * 1986-12-19 1988-10-26 Fairchild Semiconductor Corporation Empaquetage en céramique pour dispositifs semi-conducteurs à haute fréquence
US4839717A (en) * 1986-12-19 1989-06-13 Fairchild Semiconductor Corporation Ceramic package for high frequency semiconductor devices

Also Published As

Publication number Publication date
US3908185A (en) 1975-09-23
FR2263606B1 (fr) 1978-02-24
GB1499889A (en) 1978-02-01
JPS50122176A (fr) 1975-09-25

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ST Notification of lapse