FR2246022A1 - - Google Patents

Info

Publication number
FR2246022A1
FR2246022A1 FR7431491A FR7431491A FR2246022A1 FR 2246022 A1 FR2246022 A1 FR 2246022A1 FR 7431491 A FR7431491 A FR 7431491A FR 7431491 A FR7431491 A FR 7431491A FR 2246022 A1 FR2246022 A1 FR 2246022A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7431491A
Other languages
French (fr)
Other versions
FR2246022B1 (da
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732348961 external-priority patent/DE2348961C3/de
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2246022A1 publication Critical patent/FR2246022A1/fr
Application granted granted Critical
Publication of FR2246022B1 publication Critical patent/FR2246022B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Databases & Information Systems (AREA)
  • Analogue/Digital Conversion (AREA)
FR7431491A 1973-09-28 1974-09-18 Expired FR2246022B1 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732348961 DE2348961C3 (de) 1973-09-28 Schaltungsanordnung zum Einspeichern und Ausspeichern von Signalen in einen bzw. aus einem Speicher, insbesondere MOS-Speicher

Publications (2)

Publication Number Publication Date
FR2246022A1 true FR2246022A1 (da) 1975-04-25
FR2246022B1 FR2246022B1 (da) 1979-06-01

Family

ID=5894046

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7431491A Expired FR2246022B1 (da) 1973-09-28 1974-09-18

Country Status (11)

Country Link
JP (1) JPS5062333A (da)
AT (1) AT342342B (da)
BE (1) BE820448A (da)
CH (1) CH582938A5 (da)
DK (1) DK513074A (da)
FR (1) FR2246022B1 (da)
GB (1) GB1486912A (da)
IT (1) IT1022329B (da)
LU (1) LU71005A1 (da)
NL (1) NL7412832A (da)
SE (1) SE402998B (da)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0148488A2 (en) * 1983-12-23 1985-07-17 Hitachi, Ltd. Semiconductor memory having multiple level storage structure
EP0649147A1 (en) * 1993-10-11 1995-04-19 Texas Instruments France Increased capacity storage device
WO1995020225A1 (en) * 1994-01-21 1995-07-27 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
US5748546A (en) * 1994-06-02 1998-05-05 Intel Corporation Sensing scheme for flash memory with multilevel cells

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS524746A (en) * 1975-06-30 1977-01-14 Fujitsu Ltd Semiconductor memory device
JPS53138244A (en) * 1977-05-10 1978-12-02 Takeda Riken Ind Co Ltd Digital memory
JPS6163996A (ja) * 1984-09-05 1986-04-02 Nippon Telegr & Teleph Corp <Ntt> 情報記憶装置
EP1416496A1 (en) 2002-11-04 2004-05-06 Dialog Semiconductor GmbH Multiple level ram device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3705391A (en) * 1971-10-22 1972-12-05 Massachusetts Inst Technology Memory system employing capacitance storage means

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0148488A2 (en) * 1983-12-23 1985-07-17 Hitachi, Ltd. Semiconductor memory having multiple level storage structure
EP0148488A3 (en) * 1983-12-23 1988-09-21 Hitachi, Ltd. Semiconductor memory having multiple level storage structure
EP0649147A1 (en) * 1993-10-11 1995-04-19 Texas Instruments France Increased capacity storage device
WO1995020225A1 (en) * 1994-01-21 1995-07-27 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
US5566125A (en) * 1994-01-21 1996-10-15 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
US5892710A (en) * 1994-01-21 1999-04-06 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
US6091618A (en) * 1994-01-21 2000-07-18 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
US5748546A (en) * 1994-06-02 1998-05-05 Intel Corporation Sensing scheme for flash memory with multilevel cells
US5828616A (en) * 1994-06-02 1998-10-27 Intel Corporation Sensing scheme for flash memory with multilevel cells

Also Published As

Publication number Publication date
DK513074A (da) 1975-05-12
NL7412832A (nl) 1975-04-02
SE7412226L (da) 1975-04-01
DE2348961A1 (de) 1975-05-15
CH582938A5 (da) 1976-12-15
GB1486912A (en) 1977-09-28
SE402998B (sv) 1978-07-24
AT342342B (de) 1978-03-28
FR2246022B1 (da) 1979-06-01
IT1022329B (it) 1978-03-20
LU71005A1 (da) 1975-04-17
DE2348961B2 (de) 1976-08-05
JPS5062333A (da) 1975-05-28
BE820448A (fr) 1975-03-27
ATA766674A (de) 1977-07-15

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Legal Events

Date Code Title Description
ST Notification of lapse