FR2245573B1 - - Google Patents

Info

Publication number
FR2245573B1
FR2245573B1 FR7432291A FR7432291A FR2245573B1 FR 2245573 B1 FR2245573 B1 FR 2245573B1 FR 7432291 A FR7432291 A FR 7432291A FR 7432291 A FR7432291 A FR 7432291A FR 2245573 B1 FR2245573 B1 FR 2245573B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7432291A
Other versions
FR2245573A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2245573A1 publication Critical patent/FR2245573A1/fr
Application granted granted Critical
Publication of FR2245573B1 publication Critical patent/FR2245573B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • H01L21/67316—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Silicon Compounds (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
FR7432291A 1973-10-02 1974-09-25 Expired FR2245573B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2349512A DE2349512C3 (de) 1973-10-02 1973-10-02 Verfahren zum Herstellen von Halterungen aus Silicium oder Siliciumcarbid für Diffusions- und Temperprozesse

Publications (2)

Publication Number Publication Date
FR2245573A1 FR2245573A1 (fr) 1975-04-25
FR2245573B1 true FR2245573B1 (fr) 1978-03-31

Family

ID=5894341

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7432291A Expired FR2245573B1 (fr) 1973-10-02 1974-09-25

Country Status (9)

Country Link
US (1) US4203940A (fr)
JP (1) JPS5428261B2 (fr)
BE (1) BE816507A (fr)
CA (1) CA1035209A (fr)
CH (1) CH606477A5 (fr)
DE (1) DE2349512C3 (fr)
FR (1) FR2245573B1 (fr)
GB (1) GB1438877A (fr)
SE (1) SE405812B (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226173A (en) * 1975-08-22 1977-02-26 Hitachi Ltd Manufacturing method of disc wafer casing jig
JPS5263363U (fr) * 1975-11-05 1977-05-10
JPS5529518U (fr) * 1978-08-17 1980-02-26
JPS60138914A (ja) * 1983-12-26 1985-07-23 Toshiba Ceramics Co Ltd 半導体拡散炉管の製造方法
EP0309272A3 (fr) * 1987-09-25 1990-03-07 Southtech, Inc. Procédé et appareil pour la fabrication de supports et de nacelles pour plaquettes-substrats réalisés en carbure de silicium pour le traitement de matériaux semi-conducteurs
JP2701615B2 (ja) * 1991-09-27 1998-01-21 三井造船株式会社 半導体拡散炉用ウェハボートの製造方法
US5538230A (en) * 1994-08-08 1996-07-23 Sibley; Thomas Silicon carbide carrier for wafer processing
US5443649A (en) * 1994-11-22 1995-08-22 Sibley; Thomas Silicon carbide carrier for wafer processing in vertical furnaces
WO1996035228A1 (fr) * 1995-05-05 1996-11-07 Saint-Gobain Industrial Ceramics, Inc. Conception de casier vertical empechant le glissement
US5817179A (en) * 1997-01-23 1998-10-06 Samsung Electronics Co., Ltd. GaAs anneal boat design and method for use
DE19856468C1 (de) 1998-11-30 2000-06-15 Sico Jena Gmbh Quarzschmelze Verfahren zur Herstellung einer Haltevorrichtung für Halbleiterscheiben
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6975030B1 (en) 2000-01-10 2005-12-13 Micron Technology, Inc. Silicon carbide contact for semiconductor components
US6563215B1 (en) 2000-01-10 2003-05-13 Micron Technology, Inc. Silicon carbide interconnect for semiconductor components and method of fabrication
US7033920B1 (en) * 2000-01-10 2006-04-25 Micron Technology, Inc. Method for fabricating a silicon carbide interconnect for semiconductor components
US20040173948A1 (en) * 2002-09-19 2004-09-09 Pandelisev Kiril A. Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication
CN1152422C (zh) * 2002-04-25 2004-06-02 张彩根 制造晶片用的碳化硅舟的切割制造方法
EP4101826A4 (fr) * 2020-02-07 2024-03-06 Kyocera Corp Nacelle pour plaquettes

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT180726B (de) * 1952-12-19 1955-01-10 Victor Fuchs Verfahren zur Herstellung von gefüllten Behältern, Tuben od. dgl.
DE1137807B (de) * 1961-06-09 1962-10-11 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
US3480151A (en) * 1967-04-05 1969-11-25 Heraeus Schott Quarzschmelze Supporting rack of quartz
US3534862A (en) * 1968-09-13 1970-10-20 Rca Corp Semiconductor wafer transporting jig
US3850296A (en) * 1971-07-21 1974-11-26 Shinetsu Handotai Kk Device and method for accommodating semiconductor wafers

Also Published As

Publication number Publication date
DE2349512A1 (de) 1975-04-24
JPS5062579A (fr) 1975-05-28
GB1438877A (en) 1976-06-09
US4203940A (en) 1980-05-20
DE2349512C3 (de) 1978-06-08
DE2349512B2 (de) 1977-10-13
BE816507A (fr) 1974-10-16
SE405812B (sv) 1979-01-08
FR2245573A1 (fr) 1975-04-25
CA1035209A (fr) 1978-07-25
JPS5428261B2 (fr) 1979-09-14
SE7412432L (fr) 1975-04-03
CH606477A5 (fr) 1978-10-31

Similar Documents

Publication Publication Date Title
AR201758A1 (fr)
AU476761B2 (fr)
AR201235Q (fr)
FR2245573B1 (fr)
JPS5018503A (fr)
AU476714B2 (fr)
AR201229Q (fr)
AU476696B2 (fr)
AR199451A1 (fr)
AR210729A1 (fr)
AR196382A1 (fr)
AR197627A1 (fr)
AR195948A1 (fr)
AR200256A1 (fr)
AR200885A1 (fr)
AR195311A1 (fr)
AR193950A1 (fr)
AU447540B2 (fr)
AR201432A1 (fr)
AR196123Q (fr)
AR196212Q (fr)
AU1891376A (fr)
CH561808A (fr)
CH564368A5 (fr)
CH1173874A4 (fr)

Legal Events

Date Code Title Description
ST Notification of lapse